RF501B2S_11

Data Sheet Fast Recovery Diode RF501B2S Applications General rectification Dimensions（Unit : mm ） Land size figure(Unit : mm) 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 4) Very fast recovery 5) Low switching loss Construction Silicon epitaxial planar CPD 1.6 1.6 2.3 2.3 Structure (2) (1) (3) Taping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 Io Forward current surge peak (60Hz / 1cyc)(*1) 40 IFSM Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Absolute maximum ratings (Ta=25C) Parameter Unit V V A A °C °C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.86 0.015 15 Max. 0.92 1 30 Unit V μA ns Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.G 3.0 2.0 6.0 RF501B2S Electrical characteristic curves 　 Data Sheet 10 Ta=150 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=150 C Ta=125 C 1000 f=1MHz FORWARD CURRENT : :I F(A) 1 Ta=125 C 0.1 Ta=25 C REVERSE CURRENT : IR(nA) 1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 100 Ta=75 C 10 0.01 Ta=-25 C 0.001 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 50 100 150 200 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1 0 10 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : Ct(pF) 890 Ta=25 C IF=5A n=30pcs\ 100 90 Ta=25 C VR=200V n=30pcs 200 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 880 80 70 60 50 40 30 20 10 AVE : 10.7nA 190 870 180 860 170 AVE : 74.9pF 160 850 AVE:856.6mV 840 VF DISPERSION MAP 0 IR DISPERSION MAP 150 Ct DISPERSION MAP 300 30 1000 PEAK SURGE FORWARD CURRENT : I FSM(A) 250 200 150 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME : trr(ns) 25 20 15 10 5 0 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 100 1cyc AVE : 88.0A 100 50 0 IFSM DISPERSION MAP AVE : 14.5ns 10 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.G RF501B2S 1000 100 　 10 Mounted on epoxy board Rth(j-a) 8 10 Rth(j-c) IM=100mA Data Sheet TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm t DC D=1/2 FORWARD POWER DISSIPATION : Pf(W) 6 Sin(180) 4 100 1 IF=1A 1ms tim 2 300us 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS Io t T VR D=t/T VR=100V Tj=150 C 30 No break at 30kV 25 No break at 30kV 0A 10 DC 0A 0V t T D=1/2 6 Io VR 10 DC 0V AVERAGE RECTIFIED FORWARD CURRENT : lo(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Tj=150 C D=1/2 6 ELECTROSTATIC DISCHARGE TEST ESD(KV) 8 D=t/T VR=100V 8 20 15 10 5 0 4 Sin(180) 2 4 Sin(180) 2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curveﾞ(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc( C) Derating Curveﾞ(Io-Tc) C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.G Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A