RF505B6S

Super Fast Recovery Diode RF505B6S  Series Standard Fast Recovery  Dimensions（Unit : mm）  Land size figure (Unit : mm) 6.0  Applications General rectification (2) 1.6 1.6 (3) 2.3 2.3  Features 1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse current (1) CPD  Structure  Construction Silicon epitaxial planar Production month (1)  Taping dimensions（Unit : mm） 3.0 2.0 6.0 (2) (3)  Absolute maximum ratings（Tc=25 C） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave,resistive load Tc=42 C Limits 600 600 5 50 150 -55to+150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C  Electrical characteristics（Tj=25 C） Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-l) Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. - Typ. 1.3 0.05 22 － Max. 1.7 10 30 12 Unit V μA ns  C/W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RF505B6S 　 Data Sheet Electrical characteristic curves 100 Tj=125 C 10 Tj=150 C 100000 Tj=150 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 600 10000 Tj=75 C Tj=125 C 100 1000 1 Tj=25 C 0.1 Tj=75 C 100 Tj=25 C 10 10 0.01 0 500 1000 1500 2000 2500 1 0 100 200 300 400 500 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE:V F(mV) VF-IF CHARACTERISTICS 1400 Tj=25 C IF=5A n=20pcs 100 Tj=25 C VR=600V n=20pcs AVE:33.7nA 10 170 Tj=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1350 160 1300 150 AVE:150.6pF 140 1250 1200 AVE:1297mV 130 1150 1100 VF DISPERSION MAP 1 IR DISPERSION MAP 120 Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) 250 Ifsm 200 8.3ms 150 100 AVE:107.5A 50 0 1cyc 30 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 25 20 AVE:22.0ns 15 10 100 10 Ifsm 8.3ms 8.3ms 5 1cyc 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 1000 30 No break at 30kV Ifsm ELECTROSTATIC DISCHARGE TEST ESD(KV) t 25 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k AVE:19.9kV 100 On glass-epoxy board TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) Rth(j-a) PEAK SURGE FORWARD CURRENT:I FSM(A) 10 Rth(j-c) IM=100mA 100 IF=1.5A 1 1ms tim 300us 0.1 0.001 10 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RF505B6S 　 Data Sheet 0A 0V t Io VR D=t/T VR=480V Tj=150 C 7 D.C. 6 half sin wave FORWARD POWER DISSIPATION:Pf(W) 5 D=0.1 4 D=0.05 3 2 1 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 8 D=0.2 D=0.5 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 9 8 7 6 5 4 3 2 1 0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) D=0.2 D=0.1 D=0.05 D.C. D=0.8 0A 0V t T D=0.5 half sin wave Io VR D=t/T VR=480V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 9 T 8 D.C. 7 6 5 half sin wave 4 3 2 1 0 0 30 60 90 D=0.2 D=0.1 D=0.05 D=0.8 D=0.5 120 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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