RF505B6STL

RF505B6S Data Sheet Super Fast Recovery Diode RF505B6S Series Dimensions（Unit : mm） Land size figure (Unit : mm) 6.0 (2) 1.6 1.6 (3) (1) Features 1)Power mold type. (CPD) 2)High switching speed 3)Low Reverse current 3.0 2.0 Applications General rectification 6.0 Standard Fast Recovery CPD 2.3 2.3 Structure (2) Production month Construction Silicon epitaxial planar (1) (3) Taping dimensions（Unit : mm） Absolute maximum ratings（Tc=25C） Parameter Symbol Conditions Limits Unit Repetitive peak Reverse voltage Reverse voltage Average rectified forward current VRM VR Duty0.5 Direct voltage Io 60Hz half sin wave,resistive load Tc=42C 600 600 5 V V A Forward current surge peak IFSM 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C 50 A Junction temperature Storage temperature Tj Tstg 150 55 to 150 C C Electrical characteristics（Tj=25C） Parameter Symbol Conditions Min. Typ. Max. Unit IF=5.0A - 1.3 1.7 V Forward voltage VF Reverse current IR VR=600V - 0.05 10 μA trr IF=0.5A,IR=1A,Irr=0.25×IR Rth(j-l) junction to lead - 22 － 30 12 C/W Reverse recovery time Thermal resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 ns 2011.05 - Rev.A Data Sheet 　 RF505B6S Electrical characteristic curves 100000 100 f=1MHz Tj=150C 1 Tj=25C 0.1 Tj=75C 10000 Tj=125C 100 Tj=25C 10 100 10 1 1000 1500 2000 2500 100 200 300 400 500 1400 0 REVERSE CURRENT:IR(nA) 1300 1250 1200 AVE:33.7nA 10 REVERSE RECOVERY TIME:trr(ns) 8.3ms 150 100 AVE:107.5A 50 0 Tj=25C f=1MHz VR=0V n=10pcs 150 AVE:150.6pF 140 1000 25 20 AVE:22.0ns Tj=25C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 15 10 5 100 Ifsm 10 8.3ms 1 1 IFSM DISRESION MAP 30 On glass-epoxy board ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) 25 t 20 15 AVE:19.9kV 10 5 0 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 No break at 30kV PEAK SURGE FORWARD CURRENT:I FSM(A) 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP Ifsm 8.3ms 1cyc 0 1000 30 Ct DISPERSION MAP 30 1cyc 25 160 IR DISPERSION MAP Ifsm 20 120 VF DISPERSION MAP 300 15 130 1 1100 1 10 170 Tj=25C VR=600V n=20pcs AVE:1297mV 200 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Tj=25C IF=5A n=20pcs 1350 250 600 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1150 1 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 500 PEAK SURGE FORWARD CURRENT:I FSM(A) 0 FORWARD VOLTAGE:V F(mV) Tj=75C 1000 0.01 PEAK SURGE FORWARD CURRENT:I FSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Tj=125C 10 1000 Tj=150C 2/3 Rth(j-a) 10 Rth(j-c) IM=100mA IF=1.5A 1 1ms time 300us 0.1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 2011.05 - Rev.A Data Sheet 　 RF505B6S 0A Io 0V VR t 7 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) half sin wave D=0.2 D=0.1 4 D.C. 8 D=0.5 D=0.8 D=0.05 3 2 1 D=0.8 7 Io 0V VR t 6 T 5 D=t/T VR=480V Tj=150C D=0.5 half sin wave 4 3 D=0.2 2 D=0.1 D=0.05 1 0 0A 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8 D=t/T VR=480V Tj=150C D.C. 7 D=0.8 D=0.5 6 5 half sin wave 4 3 D=0.2 2 D=0.1 D=0.05 1 0 0 0 T 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D.C. 6 FORWARD POWER DISSIPATION:Pf(W) 9 9 0 30 60 90 120 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) 3/3 150 0 30 60 90 120 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A