Data Sheet
Super Fast Recovery Diode
RF505B6S
Series Standard Fast Recovery Dimensions(Unit : mm) Land size figure (Unit : mm)
6.0
Applications General rectification
(2) 1.6 1.6 (3) 2.3 2.3
Features 1)Power mold type. (CPD) 2)High switching speed 3)Low Reverse current
(1) CPD
Structure
Construction Silicon epitaxial planar
Production month
(1)
Taping dimensions(Unit : mm)
3.0 2.0
6.0
(2)
(3)
Absolute maximum ratings(Tc=25 C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg
Conditions Duty0.5 Direct voltage
60Hz half sin wave,resistive load Tc=42 C
Limits 600 600 5 50 150 55 to 150
Unit V V A A C C
60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C
Electrical characteristics(Tj=25 C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-l)
Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead
Min. -
Typ. 1.3 0.05 22 -
Max. 1.7 10 30 12
Unit V μA ns C/W
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1/3
2011.05 - Rev.A
RF505B6S
Electrical characteristic curves
Data Sheet
100 Tj=125 C 10 Tj=150 C
100000
Tj=150 C
1000 f=1MHz
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
600
10000 Tj=75 C Tj=125 C Tj=25 C
100
1000
1 Tj=25 C 0.1 Tj=75 C
100
10
10
0.01 0 500 1000 1500 2000 2500
1 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
1400
100 Tj=25 C IF=5A n=20pcs Tj=25 C VR=600V n=20pcs AVE:33.7nA 10
170 Tj=25 C f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:V F(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1350 1300 1250 1200 1150 1100 AVE:1297mV
160
150 AVE:150.6pF
140
130
1 VF DISPERSION MAP IR DISPERSION MAP
120 Ct DISPERSION MAP
300
30
1000 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:I FSM(A)
Ifsm
1cyc 8.3ms
PEAK SURGE FORWARD CURRENT:I FSM(A)
250 200 150 100
25 20 AVE:22.0ns 15 10 5 0
100
10
Ifsm 8.3ms 8.3ms
AVE:107.5A 50 0
1cyc 1 1
IFSM DISRESION MAP
trr DISPERSION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1000 Ifsm
30 No break at 30kV 25
100 On glass-epoxy board
TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W)
PEAK SURGE FORWARD CURRENT:I FSM(A)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
t
Rth(j-a) 10 Rth(j-c)
IM=100mA
20 15 10 5 0 AVE:19.9kV
100
1
1ms
IF=1.5A
time
300us 0.1 0.001
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
C=200pF R=0
C=100pF R=1.5k
0.01
ESD DISPERSION MAP
0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS
100
1000
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2/3
2011.05 - Rev.A
RF505B6S
Data Sheet
0A 0V t 7 D.C. 6 half sin wave 5 4 D=0.05 3 2 1 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 8 D=0.1 D=0.5 D=0.8 9 8 D.C. D=0.8 0A 0V t T D=0.5 half sin wave D=0.2 D=0.1 D=0.05 Io VR D=t/T VR=480V Tj=150 C 9 8 T D.C. D=0.8 D=0.5
Io VR D=t/T VR=480V Tj=150 C
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
FORWARD POWER DISSIPATION:Pf(W)
D=0.2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
7 6 5 4 3 2 1 0 0 30
7 6 5 4 3 2 1 0
half sin wave D=0.2 D=0.1 D=0.05
60
90
120
150
0
30
60
90
120
150
AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta)
CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc)
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3/3
2011.05 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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