Fast recovery diodes
RF601B2D
Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0
3)Very fast recovery 4)Low switching loss Construction Silicon epitaxial planer
CPD
Structure 2.3 2.3 Structure
(2)
(1)
(3)
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
Limits
200 VRM 200 VR 6 Io Forward current surge peak (60Hz/1cyc) 40 IFSM Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Business frequencies, Rating of R-load, Tc=128°C, 1/2 Io per diode Electrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time Thermal impedance
Unit V V A A °C °C
Min. -
Typ. 0.87 0.01 14 -
Max. 0.93 10 25 6
Unit V µA ns °C/W
Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE
trr θjc
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1/3
2009.11 - Rev.F
3.0 2.0
Features 1)Power mold type.(CPD) 2)Ultra Low VF
1.6
1.6
6.0
RB601B2D
Electrical characteristic curves
Data Sheet
10
10000 Ta=150 ° C
Ta=150 ° C
100 Ta=125 ° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz
FORWARD CURRENT : I F(A)
1
Ta=125 ° C Ta=75° C
REVERSE CURRENT:IR(nA)
1000 Ta=75° C
100
0.1
Ta=25° C Ta=-25° C
10
z
10
Ta=25 C
0.01
1
Ta=-25° C
0.001
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 50 100 150 200 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS
1 0 10 20 30 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
890 FORWARD VOLTAGE:V F(mV) Ta=25° C IF=3A n=30pcs
100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 AVE:4.60nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
880
Ta=25° C VR=200V n=30pcs
150 140 130 120 110 100 90 80 70 60 50 AVE:99.4pF Ta=25° C f=1MHz VR=0V n=10pcs
870
860 AVE:859.4mV
850
840 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300 250 200 150 100 50 0 AVE:126.0A
30
RESERVE RECOVERY TIME:trr(ns) 1cyc PEAK SURGE FORWARD CURRENT:I FSM(A)
1000
Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm
PEAK SURGE FORWARD CURRENT:I FSM(A)
Ifsm 8.3m
25 20 15 10 5 0
AVE:13.7ns
100
8.3m 8.3m 1cyc
10
1 1 10
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
IFSM DISPERSION MAP
trr DISPERSION MAP
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2/3
2009.11 - Rev.F
RB601B2D
Data Sheet
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm t
100
10
Mounted on a epoxy board Rth(j-a)
8
PEAK SURGE FORWARD CURRENT:I FSM(A)
DC D=1/2
FORWARD POWER DISSIPATION:Pf(W)
10
Rth(j-c) IM=100mA IF=3A
6
Sin(θ =180)
100
4
1
1ms
2
tim
0
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1
0.001 0.01 0.1
300us 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000
0
2
4 6 8 AVERAGE RECTIFIED FORWARD CURRENT :Io(A) Io-Pf CHARACTERISTICS
10
15
0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V t Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR VR T DC D=t/T VR=100V VR=100V Tj=150° C
15 0A 0V t 10 DC D=1/2 T
Io VR D=t/T VR=100V Tj=150° C ELECTROSTATIC DISCHARGE TEST ESD(KV)
30
No break at 30kV
25 20 15 10 5 0
No break at 30kV
10
D=1/2
5
Sin(θ=180)
5
Sin(θ=180)
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(° C) DERATING CURVE"(Io-Ta)
0 0 25 50 75 100 125 150
C=200pF R=0Ω
C=100pF R=1.5kΩ
CASE TEMPARATURE:Tc(° C) DERATING CURVE"(Io-Tc)
ESD DISPERSION MAP
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2/3
2009.11 - Rev.F
Notice
Notes
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