RF601B2DTL

RF601B2D Data Sheet Fast recovery diodes RF601B2D Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 3.0 1.6 2.0 6.0 Applications General rectification 3)Very fast recovery 4)Low switching loss Structure 2.3 2.3 CPD Construction Silicon epitaxial planer Structure (2) (1) (3)  Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 40 IFSM Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1) Business frequencies, Rating of R-load, Tc=128C, 1/2 Io per diode Electrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time Thermal impedance jc www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. trr Min. - Typ. 0.87 0.01 Max. 0.93 10 - 14 - 25 6 1/3 Unit V V A A C C Unit V A ns C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE 2011.05 - Rev.F Data Sheet 　 RB601B2D Electrical characteristic curves 10000 1 Ta=125C Ta=75C Ta=25C 0.1 Ta=-25C 0.01 REVERSE CURRENT:IR(nA) Ta=75C 100 z 10 Ta=-25C 1 100 150 0 200 AVE:859.4mV 840 Ta=25°C VR=0pcs n=30pcs 80 70 60 50 40 30 AVE:4.60nA 20 130 120 110 100 80 70 60 0 50 IR DISPERSION MAP Ct DISPERSION MAP 1000 1cyc 8.3m 150 100 AVE:126.0A 0 REVERSE RECOVERY TIME:trr(ns) 30 200 AVE:99.4pF 90 10 VF DISPERSION MAP 300 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:13.7ns Ifsm 8.3m 8.3m 100 1cyc 10 1 0 1 IFSM DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 Ta=25°C f=1MHz VR=0V n=10pcs 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 860 20 150 90 REVERSE CURRENT:IR(nA) 870 Ifsm 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25C IF=3A n=30pcs 880 850 50 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 890 FORWARD VOLTAGE:V F(mV) 10 1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:I FSM(A) Ta=25°C 0.1 0 50 f=1MHz 1000 0.001 250 Ta=125C PEAK SURGE FORWARD CURRENT:I FSM(A) FORWARD CURRENT : I F(A) Ta=150C 100 Ta=150C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 trr DISPERSION MAP 2/3 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2011.05 - Rev.F PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t 100 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0A Io 0V V VR R Rth(j-a) 10 Rth(j-c) IM=100mA 1 IF=3A 300us 0.001 0.01 T D=1/2 D=t/T D=t/T V VR=100V R=100V Tj=150C DC 5 Sin(180) 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(C) DETATING CURVEﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4 DC T D=t/T VR=100V Tj=150C D=1/2 5 Sin(180) 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 No break at 30kV No break at 30kV VR t 2 30 Io 0V 10 0 1000 25 20 15 10 5 0 0 0 Sin( =180) 6 0 0.1 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t D=1/2 tim 15 10 DC 8 2 1ms 0.1 15 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 Mounted on a epoxy board FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 ELECTROSTATIC DISCHARGE TEST ESD(KV) 1000 1 Data Sheet 　 RB601B2D 0 25 50 75 100 125 CASE TEMPARATURE:Tc(C) DETATING CURVEﾞ(Io-Tc) 3/3 150 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.05 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A