RF601B2D_11

Data Sheet Fast recovery diodes RF601B2D Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3)Very fast recovery 4)Low switching loss Construction Silicon epitaxial planer Structure CPD 2.3 2.3 Structure (2) (1) (3)  Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Limits 200 VRM 200 VR 6 Io Forward current surge peak (60Hz/1cyc) 40 IFSM Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1) Business frequencies, Rating of R-load, Tc=128C, 1/2 Io per diode Electrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal impedance IR trr jc Unit V V A A C C Min. - Typ. 0.87 0.01 14 - Max. 0.93 10 25 6 Unit V A ns C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.F 3.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 2.0 1.6 1.6 6.0 RB601B2D Electrical characteristic curves 　 Data Sheet 10 10000 Ta=150 C Ta=150 C 100 Ta=125 C f=1MHz FORWARD CURRENT : I F(A) REVERSE CURRENT:IR(nA) 1 Ta=125 C Ta=75 C 100 Ta=75 C 0.1 Ta=25 C Ta=-25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 z 10 Ta=25°C 0.01 1 Ta=-25 C 0.001 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 50 100 150 200 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 890 100 FORWARD VOLTAGE:V F(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 REVERSE CURRENT:IR(nA) Ta=25 C IF=3A n=30pcs 150 Ta=25°C VR=0pcs n=30pcs 140 130 120 110 100 90 80 70 60 50 IR DISPERSION MAP Ct DISPERSION MAP AVE:99.4pF Ta=25°C f=1MHz VR=0V n=10pcs 90 80 70 60 50 40 30 20 10 AVE:4.60nA 870 860 850 AVE:859.4mV 840 VF DISPERSION MAP 0 300 250 200 150 100 50 0 AVE:126.0A 30 REVERSE RECOVERY TIME:trr(ns) 1cyc 1000 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 8.3m PEAK SURGE FORWARD CURRENT:I FSM(A) 25 20 15 10 5 0 AVE:13.7ns Ifsm 100 8.3m 8.3m 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.F RB601B2D 　 Data Sheet 1000 Ifsm 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 Mounted on a epoxy board Rth(j-a) 8 PEAK SURGE FORWARD CURRENT:I FSM(A) t DC D=1/2 Sin( =180) FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-c) IM=100mA IF=3A 6 100 4 1 2 1ms tim 0 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 300us 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 15 0A Io 0V t 15 0A 0V t T Io VR D=t/T VR=100V Tj=150 C 30 No break at 30kV No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 D=1/2 DC T D=t/T D=t/T VR=100V VR=100V Tj=150 C 10 DC D=1/2 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR VR 25 20 15 10 5 0 5 Sin(180) 5 Sin(180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) DETATING CURVEﾞ(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) DETATING CURVEﾞ(Io-Tc) C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A