RF601T2D_10

Fast recovery diode RF601T2D Applications General rectification Dimensions (Unit : mm)  Structure 4.5±0.3 　　　 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) ① 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planar 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 60 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. 0.87 0.01 18 Max. 0.93 10 25 Unit V μA ns Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR trr www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.C RF601T2D Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 10000 Ta=150 C 100 Ta=125 C f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=125 C Ta=75 C 0.1 100 Ta=75 C Ta=25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 1000 10 Ta=25 C 10 0.01 Ta=-25 C 1 Ta=-25 C 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:V F(mV) VF-IF CHARACTERISTICS 0.1 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 890 Ta=25 C IF=3A n=30pcs 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 AVE:4.60nA Ta=25 C VR=200V n=30pcs 150 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 130 120 110 100 90 80 70 60 50 AVE:99.4pF Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) 880 870 860 AVE:859.4mV 850 840 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 250 200 150 100 AVE:126.0A 50 0 Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 8.3ms 8.3ms 100 1cyc AVE:13.7ns 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) 100 Ifsm t 10 Mounted on epoxy board IM=100mA IF=3A PEAK SURGE FORWARD CURRENT:I FSM(A) 8 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 DC 10 1ms time 300us 6 Sin(=180) 100 4 1 Rth(j-c) 2 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.C RF601T2D 　 Data Sheet 15 0A 0V t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 DC T Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=100V Tj=150 C 15 0A 0V t 10 DC D=1/2 T Io VR D=t/T VR=100V Tj=150 C ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 0 0 25 50 75 100 125 150 C=200pF R=0 C=100pF R=1.5k No break at 30kV D=1/2 5 Sin(=180) 5 Sin(=180) 0 0 25 50 75 100 125 150 0 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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