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RF601T2D_11

RF601T2D_11

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RF601T2D_11 - Fast recovery diode - Rohm

  • 数据手册
  • 价格&库存
RF601T2D_11 数据手册
Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions (Unit : mm)  Structure 4.5±0.3     0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3     0.1 2.8±0.2     0.1 (1) (2) (3) ① 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planar 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4   0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 60 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.87 0.01 18 Max. 0.93 10 25 Unit V μA ns Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C RF601T2D Electrical characteristics curves   Data Sheet 10 Ta=150 C 10000 Ta=150 C 100 Ta=125 C f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=125 C Ta=75 C 0.1 100 Ta=75 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 1000 Ta=25 C 10 0.01 Ta=-25 C 10 Ta=25 C 1 Ta=-25 C 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 890 Ta=25 C IF=3A n=30pcs 100 90 Ta=25 C VR=200V n=30pcs 150 140 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 80 70 60 50 40 30 20 10 AVE:4.60nA 130 120 110 100 90 80 70 60 50 AVE:99.4pF 870 860 AVE:859.4mV 850 840 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms 1000 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 25 20 15 10 5 0 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 100 8.3ms 8.3ms 1cyc AVE:126.0A 50 0 IFSM DISPERSION MAP AVE:13.7ns 10 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 Mounted on epoxy board IM=100mA 10 TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t IF=3A 8 D=1/2 DC 10 FORWARD POWER DISSIPATION:Pf(W) 1ms time Rth(j-a) 300us 6 Sin(=180) 100 4 1 Rth(j-c) 2 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RF601T2D   Data Sheet 15 0A 0V t T Io VR 15 0A 0V t T 30 Io VR D=t/T VR=100V Tj=150 C 25 No break at 30kV No break at 30kV 10 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 DC D=1/2 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=100V Tj=150 C 20 15 10 5 0 D=1/2 5 Sin(=180) 5 Sin(=180) 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) C=200pF R=0 C=100pF R=1.5k CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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