Data Sheet
Fast recovery diode
RF601T2D
Applications General rectification Dimensions (Unit : mm) Structure
4.5±0.3 0.1
Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
10.0±0.3 0.1
2.8±0.2 0.1
(1) (2) (3)
①
1.2 1.3 0.8 (1) (2) (3)
5.0±0.2
Construction Silicon epitaxial planar
8.0±0.2 12.0±0.2
13.5MIN
15.0±0.4 0.2 8.0
0.7±0.1 0.05
2.6±0.5
ROHM : TO220FN ① Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 60 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode
Unit V V A A C C
Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time
Symbol VF IR trr
Min. -
Typ. 0.87 0.01 18
Max. 0.93 10 25
Unit V μA ns
Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R
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1/3
2011.05 - Rev.C
RF601T2D
Electrical characteristics curves
Data Sheet
10 Ta=150 C
10000
Ta=150 C
100 Ta=125 C f=1MHz
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=125 C Ta=75 C
0.1
100
Ta=75 C
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
1000
Ta=25 C
10
0.01
Ta=-25 C
10
Ta=25 C
1
Ta=-25 C
0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
1 0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
890 Ta=25 C IF=3A n=30pcs
100 90 Ta=25 C VR=200V n=30pcs
150 140 Ta=25 C f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:V F(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
880
80 70 60 50 40 30 20 10 AVE:4.60nA
130 120 110 100 90 80 70 60 50 AVE:99.4pF
870
860 AVE:859.4mV 850
840 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300
30 Ifsm 1cyc 8.3ms
1000
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:I FSM(A)
PEAK SURGE FORWARD CURRENT:I FSM(A)
250 200 150 100
25 20 15 10 5 0
Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 100 8.3ms 8.3ms
1cyc
AVE:126.0A 50 0 IFSM DISPERSION MAP
AVE:13.7ns
10
1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
Mounted on epoxy board
IM=100mA
10
TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W)
PEAK SURGE FORWARD CURRENT:I FSM(A)
Ifsm t
IF=3A
8
D=1/2
DC
10
FORWARD POWER DISSIPATION:Pf(W)
1ms
time
Rth(j-a)
300us
6
Sin(=180)
100
4
1
Rth(j-c)
2
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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2/3
2011.05 - Rev.C
RF601T2D
Data Sheet
15
0A 0V t T
Io VR
15 0A 0V t T
30 Io VR D=t/T VR=100V Tj=150 C 25 No break at 30kV No break at 30kV
10
DC
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
10
DC D=1/2
ELECTROSTATIC DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
D=t/T VR=100V Tj=150 C
20 15 10 5 0
D=1/2
5
Sin(=180)
5
Sin(=180)
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta)
C=200pF R=0
C=100pF R=1.5k
CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc)
ESD DISPERSION MAP
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3/3
2011.05 - Rev.C
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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