RFN10B3STL

RFN10B3S Data Sheet Super Fast Recovery Diode RFN10B3S zDimensions(Unit : mm) zLand Size Figure(Unit : mm) 6.0 2.0 2.3㼼0.2 㻌 㻌 㻌 0.1 C0.5 1.5㼼0.3 5.1㼼0.2 㻌 㻌 㻌 0.1 9.5㼼0.5 16 5.5㼼0. 3 0.75 0.9 (1) (2) (3) 0.65㼼0.1 CPD 0.5㼼0.1 2.3㼼0.2 2.3㼼0.2 1.6 PMDS 2.5 ձ 0.8 min zFeatures 1)Power mold type(CPD) 2)Low switching loss 3)High current overload capacity 6.0 0.5㼼0.1 zApplications General rectification 3.0 2.04.2 6.5㼼0.2 2.0 zSerise Standard Fast Recovery 2.3 2.3 zStructure 1.0㼼0.2 ROHM : CPD JEITA : SC-63 ձ Manufacture zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) 㻞㻚㻜㼼㻜㻚㻜㻡 φ 㻝㻚㻡㻡㼼㻜㻚㻝 䚷䚷䚷䚷䚷㻌㻌㻜 㻤㻚㻜㼼㻜㻚㻝 㻜㻚㻠㼼㻜㻚㻝 φ 㻟㻚㻜㼼㻜㻚㻝 㻤㻚㻜㼼㻜㻚㻝 㻝㻜㻚㻝㼼㻜㻚㻝 㻝㻜㻚㻝㼼㻜㻚㻝 Parameter 㻢㻚㻤㼼㻜㻚㻝 㻜䡚㻜㻚㻡 zAbsolute Maximum Ratings(Tc=25°C) 㻝㻟㻚㻡㼼㻜㻚㻞 㼀㻸 㻝㻢㻚㻜㼼㻜㻚㻞 㻣㻚㻡㼼㻜㻚㻜㻡 㻞㻚㻡㼼㻜㻚㻝 㻠㻚㻜㼼㻜㻚㻝 㻞㻚㻣㼼㻜㻚㻞 Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty䍺0.5 350 V Reverse voltage VR Average rectified foward current Io IFSM Forward current surge peak Direct voltage 60Hz half sin wave , Resistive load 350 V Tc=34°C 10 A (*1) 80 A 60Hz half sin wave , Non-repetitive at Tj=25°C Junction temperature Tj 150 °C Storage temperature Tstg 55 to 150 °C (*1) 1-3pin common circuit zElectrical Characteristics(Tj=25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=10A 䠉 1.1 1.5 V Reverse current IR VR=350V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 20 30 ns Rth(j-c) Junction to case 䠉 䠉 6.0 °C/W Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A Data Sheet 　 RFN10B3S 100000 100 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=25°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 100 150 200 250 300 350 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 1150 IF=10A Tj=25°C 1140 VR=350V Tj=25°C 1130 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 50 1120 1110 1100 1090 AVE:1107mV 1080 10 AVE:12.2nA 1070 1060 1050 1 VF DISPERSION MAP IR DISPERSION MAP 1000 180 f=1MHz f=1MHz VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 175 100 10 Tj=25°C 170 165 160 AVE:165.0pF 155 150 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2012.06 - Rev.A Data Sheet 　 RFN10B3S 160 30 120 100 80 60 40 IFSM 20 8.3ms RESERVE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) IF=0.5A IR=1.0A Irr=0.25×IR AVE:109A 140 25 Tj=25°C 20 15 AVE:19.7ns 10 5 1cyc. 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 100 10 IFSM 8.3ms 8.3ms time 100 1cyc. 1 10 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 3 AVE:2.98kV 2 AVE:0.67kV 1 C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 4 ELECTROSTATIC DISCHARGE TEST ESD(kV) 100 TIME:t(ms) IFSM-t CHARACTERISTICS 5 0 10 Rth(j-c) 1 0.1 0.001 C=100pF R=1.5kΩ 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 10 3/4 2012.06 - Rev.A 18 30 16 D=0.8 25 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.5 FORWARD POWER DISSIPATION:Pf(W) Data Sheet 　 RFN10B3S half sin wave 20 D=0.2 15 D=0.1 D=0.05 10 14 0A Io 0V VR t 12 T D=t/T VR=350V Tj=150°C 10 D.C. D=0.8 8 D=0.5 6 half sin wave D=0.2 4 5 D=0.1 2 0 D=0.05 0 0 2 4 6 8 10 12 14 16 18 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 18 D.C. 16 0A Io 0V VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 14 D=0.8 12 T D=0.5 D=t/T VR=350V Tj=150°C 10 half sin wave 8 D=0.2 6 D=0.1 4 D=0.05 2 0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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