RFN10NS3S

Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S ① lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure ② lConstruction Silicon epitaxial planer ① Manufacture Year, Week and Day ① ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature (*) 1-3pin common circuit lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time (*) IR trr IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load Tc=88°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C (*) Limits 350 350 10 100 150 -55 to +150 Unit V V A A C C Conditions IF=10A VR=350V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 1.25 0.05 22 － Max. 1.5 10 30 4.0 Unit V μA ns °C/W Thermal resistance Rth(j-c) (*) Design assurance without measurement. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RFN10NS3S 　 Data Sheet 100 100000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Tj=125°C 10 Tj=150°C 10000 Tj=150°C Tj=125°C 1000 Tj=75°C 1 Tj=25°C 100 Tj=75°C 10 Tj=25°C 0.1 0 500 1000 1500 2000 2500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1250 Tj=25°C IF=10A n=20pcs 1200 100 1150 1100 10 1050 AVE:1091.5mV 1 0 5 10 15 20 25 30 1000 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 1000 Tj=25°C VR=350V n=20pcs 100 180 175 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 170 165 160 155 AVE:161.2pF 150 145 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 10 AVE:31.8nA 1 IR DISPERSION MAP 140 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RFN10NS3S 　 Data Sheet 300 1cyc REVERSE RECOVERY TIME:trr(ns) IFSM 8.3ms 30 Tj=25°C IF=0.5A IR=1.0A Irr=0.25×IR n=10pcs 280 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 25 260 20 240 2pi 220 AVE:224.5A 1pi 180 3pi 15 10 AVE:18.5ns 200 1-3pin shorted 5 160 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 2pi 10 IFSM 1pi 8.3ms 8.3ms 1-3pin shorted 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 3pi 2pi 10 IFSM time 1pi 3pi 1-3pin shorted 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 20 18 16 14 12 10 8 6 4 2 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE：0.73kV AVE：13.8kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) 10 Rth(j-c) 1 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RFN10NS3S 　 Data Sheet 25 D.C. D=0.8 20 D=0.5 FORWARD POWER DISSIPATION:Pf(W) 15 half sin wave D=0.2 10 D=0.1 D=0.05 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 18 16 14 12 10 half sin wave 8 6 4 2 D=0.2 D=0.1 D=0.05 D=0.5 D.C. D=0.8 0A 0V t T Io VR D=t/T VR=280V Tj=150°C 0 0 2 4 6 8 10 12 14 16 18 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 0A 0V t Io VR D=t/T VR=280V Tj=150°C 18 16 14 12 10 half sin wave 8 6 4 2 0 0 30 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) D=0.2 D=0.1 D=0.05 D=0.5 D.C. D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) T www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A