Data Sheet
Super Fast Recovery Diode
RFN16T2D
Applications General rectification Dimensions (Unit : mm) Structure
4.5±0.3 0.1
Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss
10.0±0.3 0.1
2.8±0.2 0.1
1.2 1.3 0.8 (1) (2) (3)
5.0±0.2
Construction Silicon epitaxial planer
RFN16 T2D ①
8.0±0.2 12.0±0.2
14.0±0.5 13.5MIN
0.7±0.1 0.05
15.0±0.4 0.2 8.0
2.6±0.5
ROHM : TO220FN ① dot (year week factory)
Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg
Conditions Duty≤0.5 Direct voltage
60Hz half sin wave, Resistance load,
Limits 200 200 16 100 150 55 to 150
Unit V V A A C C
Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C
Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode VF IR trr Rth(j-c)
Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R junction to case
Min. - - - -
Typ. 0.90 0.01 16 -
Max. 0.98 10 30 2.5
Unit V μA ns °C/W
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1/4
2011.12 - Rev.A
RFN16T2D
Data Sheet
100
10000 Tj=150°C
10 FORWARD CURRENT:IF(A)
Tj=125°C REVERSE CURRENT:IR(nA) 1000
Tj=125°C
1
Tj=150°C Tj=25°C
Tj=75°C 100
0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
10
Tj=25°C
per diode 1 0 50 100 150 200
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 Tj=25°C IF=8A n=20pcs per diode
950
100
900
850
AVE:894.5mV
per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800
100 Tj=25°C VR=200V n=20pcs per diode
240 Ta=25°C f=1MHz VR=0V n=10pcs per diode
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
220
10
AVE:221.5pF
AVE:14.2nA
200
1 IR DISPERSION MAP
180 Ct DISPERSION MAP
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2/4
2011.12 - Rev.A
RFN16T2D
Data Sheet
250 IFSM ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns)
30 Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs per diode
25
20
200 AVE:204.5A
15
10
AVE:14.7ns
5
150 IFSM DISPERSION MAP
0 trr DISPERSION MAP
1000
1000
IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) time
100
100
10 IFSM 8.3ms 8.3ms
1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
10
Rth(j-a)
20
Rth(j-c) 1
15
10
5
0
C=200pF R=0Ω
C=100pF R=1.5kΩ
0.1 0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME:t(s) Rth-t CHARACTERISTICS
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3/4
2011.12 - Rev.A
RFN16T2D
Data Sheet
35
30 D.C. 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 20
0A 0V t T
Io VR D=t/T VR=100V Tj=100°C
30
D.C. D=0.8
FORWARD POWER DISSIPATION:Pf(W)
25
D=0.5 half sin wave D=0.2
D=0.5
20
15
half sin wave
15
D=0.1 D=0.05
10
10
D=0.2 D=0.1
5
5
D=0.05
0 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
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4/4
2011.12 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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