RFN20T2D

Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 　　　 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planer RFN20 T2D ① 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① dot (year week factory) Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 200 200 20 100 150 55 to 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode VF IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R junction to case Min. － － － － Typ. 0.9 0.01 16 － Max. 0.98 10 30 2.0 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A RFN20T2D 　 Data Sheet 100 100000 Tj=125°C 10 FORWARD CURRENT:IF(A) Tj=150°C 1 Tj=25°C 0.1 REVERSE CURRENT:IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=10A n=20pcs per diode 950 100 900 AVE:898.3mV 850 per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 100 Tj=25°C VR=200V n=20pcs per diode 300 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 260 10 240 AVE:257.4pF AVE:18.0nA 220 1 IR DISPERSION MAP 200 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RFN20T2D 　 Data Sheet 300 30 Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs per diode REVERSE RECOVERY TIME:trr(ns) 250 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 25 200 AVE:218.5A 150 20 15 AVE:15.5ns 100 IFSM 8.3ms 0 IFSM DISPERSION MAP 1cyc 10 50 5 0 trr DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM time 100 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 Rth(j-a) Rth(j-c) 20 15 1 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RFN20T2D 　 Data Sheet 40 D.C. 35 30 FORWARD POWER DISSIPATION:Pf(W) 25 20 D=0.1 15 D=0.05 10 5 0 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.5 half sin wave D=0.2 35 0A 0V t D.C. T D=0.8 D=0.5 Io VR D=t/T VR=100V Tj=150°C 30 25 20 half sin wave 15 D=0.2 10 D=0.1 5 D=0.05 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A