RFN5B2S

Data Sheet Super Fast Recovery Diode RFN5B2S Applications General rectification Dimensions (Unit : mm) 6.5±0.2 2.3±0.2 　　　 0.1 0.5±0.1 C0.5 1.5±0.3 5.1±0.2 　　　 0.1 Land size figure (Unit : mm) 6.0 Features 1)Power mold type. (CPD) 2)Low switching loss 3)High current overload capacity ① 0.8 min 0.75 （1） 0.9 （2） （3） 2.3±0.2 0.65±0.1 2.5 9.5±0.5 CPD 2.3 2.3 Construction Silicon epitaxial planer 0.5±0.1 1.0±0.2 2.3±0.2 Structure ROHM : CPD JEITA : SC-63 ① Manufacture Date Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 8.0±0.1 φ1.55±0.1 　　　　　 0 0.4±0.1 7.5±0.05 2.5±0.1 10.1±0.1 6 .8±0.1 8.0±0.1 φ3.0±0.1 0～0.5 13.5±0.2 10.1±0.1 2.7±0.2 TL Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave,resistive load Tc=82°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 200 200 5 40 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-c) Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R junction to lead Min. － － － － Typ. 0.90 0.01 13 － Max. 0.98 10 25 12 16.0±0.2 3.0 2.0 5.5±0.3 　　　 0.1 1.6 1.6 6.0 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A RFN5B2S 　 Data Sheet 100 10000 Tj=150°C 1000 REVERSE CURRENT:IR(nA) Tj=125°C 100 Tj=75°C 10 FORWARD CURRENT:IF(A) 10 Tj=150°C 1 Tj=125°C Tj=25°C 0.1 Tj=75°C 0.01 1 Tj=25°C 0.001 0 200 400 600 800 1000 1200 1400 1600 1800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 200 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=5A n=20pcs 100 900 10 AVE:895.5mV 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 VF DISPERSION MAP 100 Tj=25°C VR=200V n=20pcs 150 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 130 AVE:135.2pF 10 AVE:13.25nA 120 110 1 IR DISPERSION MAP 100 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RFN5B2S 　 Data Sheet 200 180 REVERSE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 160 140 120 100 80 60 40 20 0 IFSM DISPERSION MAP IFSM 8.3ms 1cyc AVE:112.5A 30 Tj=25°C IF=0.5A IR=1.0A Irr=0.25×IR n=10pcs 25 20 15 10 AVE:12.6ns 5 0 trr DISPERSION MAP 1000 IFSM 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) time 100 1cyc. 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 20 10 Rth(j-c) 15 AVE：19.9kV 10 1 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 0 0.001 0.01 ESD DISPERSION MAP 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RFN5B2S 　 Data Sheet 8 D.C. 10 0A 8 D.C. 0V t T 6 D=1/2 Io VR D=t/T VR=100V Tj=150°C 6 FORWARD POWER DISSIPATION:Pf(W) Sin(θ＝180) D=1/2 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 Sin(θ＝180) 2 2 0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A