RFU10TF6S_10

Super Fast Recovery Diode RFU10TF6S Series Ultra Fast Recovery Dimentions(Unit : mm) Structure Applications General rectification (1) (3) Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial plnner (1) (3) Absolute maximum ratings(Tc=25 C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=50 C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C Limits 600 600 10 100 150 -55 to +150 Unit V V A A C C Electrical characteristics(Tj=25 C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to case Min. - Typ. 2.3 0.03 16 - Max. 2.8 10 25 3.5 Unit V μA ns C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RFU10TF6S Electrical characteristics curves 　 Data Sheet 100 Tj=125 C FORWARD CURRENT : IF(A) Tj=150 C 10 Tj=25 C Tj=75 C 1 100000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 Tj=150 C REVERSE CURRENT : IR(nA) 10000 Tj=125 C f=1MHz Tj=25 C 1000 Tj=75 C 100 100 Tj=25 C 10 0.1 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 1 0 100 200 300 400 500 600 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 2500 Tｊ=25 C IF=10A n=20pcs 100 Tｊ=25 C VR=600V n=20pcs CAPACITANCE BETWEEN TERMINALS : Ct(pF) 250 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : VF(mV) 2400 REVERSE CURRENT : IR(nA) 240 2300 AVE : 47.3nA 10 230 2200 AVE : 2249mV 2100 220 AVE : 221.3pF 210 2000 VF DISPERSION MAP 1 200 IR DISPERSION MAP Ct DISPERSION MAP 200 RESERVE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT: : IFSM(A) 30 Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 1000 150 AVE : 150.0A PEAK SURGE FORWARD CURRENT : IFSM(A) 25 20 100 100 15 AVE : 16.2ns 10 10 50 IFSM 8.3ms 1cyc IFSM 8.3ms 8.3ms 5 1cyc. 0 trr DISPERSION MAP 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 1000 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 AVE：1.14kV C=100pF R=1.5k AVE：4.11kV 10 Rth(j-c) IFSM time 100 TRANSIENT ℃ THAERMAL IMPEDANCE : Rth ( /W) PEAK SURGE FORWARD CURRENT : IFSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RFU10TF6S 45 40 35 FORWARD POWER DISSIPATION : Pf(W) 30 25 20 15 10 5 0 0 3 6 9 12 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 18 D=0.0 D=0. D=0 half sin D=0. AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 12 10 8 6 4 2 0 0 D=0.2 D=0.1 D=0 0 D=0 D.C. 14 D=0.8 D=0.5 half sin 16 D.C. 　 0A 0V t Io VR D=t/T VR=480V Tj=150 C Data Sheet T 30 60 90 120 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 150 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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