RFU10TF6S_11

Data Sheet Super Fast Recovery Diode RFU10TF6S Series Ultra Fast Recovery Dimentions(Unit : mm) Structure Applications General rectification (1) (3) Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial plnner (1) (3) Absolute maximum ratings(Tc=25 C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=50 C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C Limits 600 600 10 100 150 55 to 150 Unit V V A A C C Electrical characteristics(Tj=25 C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to case Min. - Typ. 2.3 0.03 16 - Max. 2.8 10 25 3.5 Unit V μA ns C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFU10TF6S Electrical characteristics curves 100 Tj=125 C 100000 　 Data Sheet Tj=150°C Tj=125°C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 f=1MHz Tj=25 C FORWARD CURRENT : I F(A) Tj=150 C 10 Tj=25 C Tj=75 C 1 REVERSE CURRENT : IR(nA) 10000 1000 Tj=75C 100 100 Tj=25 C 10 0.1 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 100 200 300 400 500 600 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 2500 100 Tｊ=25 C IF=10A n=20pcs Tｊ=25 C VR=600V n=20pcs AVE : 47.3nA 10 250 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : V F(mV) 2400 REVERSE CURRENT : IR(nA) 240 Ta=25 C f=1MHz VR=0V n=10pcs 2300 230 2200 AVE : 2249mV 2100 220 AVE : 221.3pF 210 2000 VF DISPERSION MAP 1 IR DISPERSION MAP 200 Ct DISPERSION MAP 200 REVERSE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT: : I FSM(A) 30 25 20 15 10 5 0 trr DISPERSION MAP AVE : 16.2ns Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 1000 150 AVE : 150.0A PEAK SURGE FORWARD CURRENT : I FSM(A) 100 100 10 50 IFSM 8.3ms 1cyc IFSM 8.3ms 8.3ms 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 1000 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 AVE：1.14kV C=200pF R=0 C=100pF R=1.5k AVE：4.11kV 10 Rth(j-c) IFSM time TRANSIENT THAERMAL IMPEDANCE : Rth (℃/W) PEAK SURGE FORWARD CURRENT : I FSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFU10TF6S 　 Data Sheet 45 40 D=0.8 D=0.5 D.C. 16 D.C. 14 D=0.8 D=0.5 0A 0V t Io VR D=t/T VR=480V Tj=150 C half sin wave D=0.2 D=0.1 D=0.05 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 35 12 10 8 6 4 2 0 FORWARD POWER DISSIPATION : Pf(W) 30 25 20 15 10 5 0 0 3 T half sin wave D=0.2 D=0.1 D=0.05 6 9 12 15 18 0 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A