RFU20TM5S_11

Data Sheet Super Fast Recovery Diode RFU20TM5S Series Ultra Fast Recovery Dimensions(Unit : mm) Structure Applications General rectification (1) (2) (3) Features 1)Cathode common Single type.(TO-220) 2)Ultra high switching speed (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 530 530 20 100 150 55 to 150 Unit V V A A C C Tc=95C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=20A VR=530V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.65 0.05 23 - Max. 2 10 30 1.8 Unit V μA ns C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFU20TM5S Electrical characteristic curves 100 　 Data Sheet 100000 Tj=150 C 1000 f=1MHz Tj=25 C REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(A) Tj=150 C 10 Tj=125 C 1000 Tj=125 C Tj=25 C 1 100 10 Tj=25 C 0.1 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10000 100 1 10 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1800 Tｊ=25 C IF=20A n=20pcs 100 Tｊ=25 C VR=530V n=20pcs 450 Tｊ=25 C f=1MHz VR=0V n=10pcs AVE : 419pF FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 1700 AVE : 64.0nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) 430 410 1600 10 390 1500 AVE : 1567mV 370 1400 VF DISPERSION MAP 1 IR DISPERSION MAP 350 Ct DISPERSION MAP 300 IFSM 250 1cyc 8.3ms 40 1000 Tｊ=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 30 25 20 15 10 200 PEAK SURGE FORWARD CURRENT : I FSM(A) 35 AVE : 231.0A 100 IFSM 8.3ms 8.3ms AVE : 22.7ns 150 1cyc 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 IFSM DISRESION MAP 1000 5 100 IF=1A time 300us ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM 4 PEAK SURGE FORWARD CURRENT : I FSM(A) t TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) IM=100mA 3 10 1ms Rth(j-a) 100 2 AVE : 0.9kV AVE : 2.32kV 1 1 Rth(j-c) 0 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 ESD DISPERSION MAP 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFU20TM5S 　 Data Sheet 0A 0V t D=t/T Io VR 30 half sin wave 25 D=0.2 D=0.1 20 15 10 5 0 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS D=0.05 D=0.8 D=0.5 35 0A Io VR 35 D.C. D=0.8 D=0.5 half sin wave 0V t D=t/T T VR=430V Tj=150 C 30 30 D.C. D=0.8 D=0.5 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D.C. FORWARD POWER DISSIPATION : Pf(W) 25 20 15 10 5 0 0 30 D=0.2 D=0.1 D=0.05 T VR=430V Tj=150C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 25 20 half sin wave 15 D=0.2 10 5 0 D=0.1 D=0.05 60 90 120 150 0 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A