RFUS20NS4S_11

Data Sheet Super Fast Recovery Diode RFUS20NS4S lSeries Ultra Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFUS20 NS4S ① lFeatures 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S Manufacture Year, Week and Day ① lStructure ② lConstruction Silicon epitaxial planer ① ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , Tc=47°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25℃ Limits 430 430 20 100 150 -55 to +150 Unit V V A A C C lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time (*) IR trr Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 1.4 0.06 24 － Max. 1.6 10 35 2.5 Unit V μA ns °C/W Thermal resistance (*) Rth(j-c) (*) Design assurance without measurement. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RFUS20NS4S 　 Data Sheet 100 Tj=125°C FORWARD CURRENT:IF(A) Tj=150°C 10 REVERSE CURRENT:IR(nA) 1000000 100000 Tj=125°C Tj=150°C 10000 Tj=25°C 1000 Tj=75°C 1 Tj=75°C 100 Tj=25°C 10 0.1 0 500 1000 1500 2000 2500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1500 Tj=25°C IF=20A n=20pcs 1450 1400 100 1350 AVE:1373mV 1300 1250 10 0 5 10 15 20 25 30 1200 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Tj=25°C VR=430V n=20pcs AVE:49.0nA 10 400 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 380 370 360 AVE:372.3pF 1 IR DISPERSION MAP 350 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RFUS20NS4S 　 Data Sheet 300 IFSM 8.3ms 200 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs AVE:22.9ns 15 250 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 150 AVE:183A 100 10 50 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) time 100 100 10 IFSM 8.3ms 1cyc. 8.3ms 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 7 6 ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 4 3 2 AVE：6.95kV 10 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-c) 1 AVE：0.93kV 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RFUS20NS4S 　 Data Sheet 70 D.C. 60 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 35 0A 30 D.C. D=0.8 25 D=0.5 20 half sin wave 15 D=0.2 D=0.1 5 0 0 5 10 15 20 25 30 35 0 30 60 90 120 150 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) D=0.05 T 0V t Io VR D=t/T VR=350V Tj=150°C 50 D=0.5 half sin wave 40 D=0.2 30 D=0.1 D=0.05 20 10 10 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A