RFUS20TM4S

Data Sheet Super Fast Recovery Diode RFUS20TM4S Series Ultra Fast Recovery Dimensions (Unit : mm) +0.3 −0.1 +0.3 −0.1 +0.2 −0.1 Structure Applications General rectification (1) +0.4 −0.2 (2) (3) Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type Construction Silicon epitaxial planer +0.1 −0.05 Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=68C Limits 430 430 20 100 150 55 to 150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.4 0.05 24 - Max. 1.6 10 35 2 Unit V μA ns C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFUS20TM4S Electrical characteristic curves 　 Data Sheet 100 Tj=125 C 100000 Tj=150 C 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) Tj=150 C 10 Tj=25 C Tj=75 C 1 REVERSE CURRENT : IR(nA) 10000 Tj=125 C f=1MHz Tj=25 C 1000 100 100 Tj=75 C 10 Tj=25 C 0.1 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1500 1450 1400 1350 AVE : 1373mV 1300 1250 1200 VF DISPERSION MAP Tｊ=25 C IF=20A n=20pcs 1000 Tｊ=25 C VR=430V n=20pcs 100 400 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 390 Ta=25 C f=1MHz VR=0V n=10pcs 380 AVE : 49.0nA 10 370 360 AVE : 372.3pF 1 IR DISPERSION MAP 350 Ct DISPERSION MAP 300 30 1000 Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs REVERSE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) PEAK SURGE FORWARD CURRENT : I FSM(A) 250 200 150 100 IFSM 50 8.3ms 0 IFSM DISRESION MAP 1cyc 25 20 AVE : 22.9ns 15 10 5 0 trr DISPERSION MAP 100 AVE : 183A 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 7 6 5 4 3 AVE : 0.93kV 2 1 0 AVE : 6.05kV 10 ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM FSM(A) time TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) Rth(j-c) PEAK SURGE FORWARD CURRENT : 100 1 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFUS20TM4S 　 Data Sheet 70 D.C. 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS D=0.05 D=0.5 half sin wave D=0.2 D=0.1 D=0.8 35 30 D.C. D=0.8 D=0.5 0A 0V t T Io VR D=t/T VR=350V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) FORWARD POWER DISSIPATION : Pf(W) 25 20 half sin wave 15 D=0.2 10 5 0 0 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 D=0.1 D=0.05 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A