RFUS20TM6S_11

Data Sheet Super Fast Recovery Diode RFUS20TM6S Series Ultra Fast Recovery Dimensions(Unit : mm) +0.3 -0.1 +0.3 -0.1 +0.2 -0.1 Structure Applications General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg +0.4 -0.2 (1) (2) (3) Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 600 600 20 100 150 55 to 150 Tc=50C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Unit V V A A °C °C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 2.3 0.05 23 － Max. 2.8 10 35 1.8 Unit V μA ns C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFUS20TM6S Electrical characteristics curves 100 Tj=125 C Tj=150 C 100000 Tj=150 C 1000 Data Sheet REVERSE CURRENT : I R(nA) FORWARD CURRENT : I F(A) 10000 Tj=125 C 10 Tj=25 C Tj=75 C 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) f=1MHz Tj=25 C 100 100 1 Tj=75 C 10 Tj=25 C 0.1 0 1000 2000 3000 4000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 2500 1000 Tｊ=25 C IF=20A n=20pcs Tｊ=25 C VR=600V n=20pcs 100 450 445 FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : I R(nA) 2400 AVE : 2113mV 2300 2200 2100 2000 1900 VF DISPERSION MAP 440 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 435 430 425 420 415 410 405 Ta=25 C f=1MHz VR=0V n=10pcs AVE : 415.9pF 10 AVE : 61.8nA 1 IR DISPERSION MAP 400 Ct DISPERSION MAP 300 40 1000 REVERSE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) 200 150 100 AVE : 156A 50 0 IFSM DISRESION MAP 30 25 20 AVE:26.1ns 15 10 trr DISPERSION MAP PEAK SURGE FORWARD CURRENT : I 8.3ms FSM(A) 250 IFSM 1cyc 35 Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 100 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 IFSM FSM(A) 15 10 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) time 12 Rth(j-c) PEAK SURGE FORWARD CURRENT : I 9 100 AVE : 11.0kV 6 1 AVE : 1.20kV 3 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFUS20TM6S Data Sheet 0A 90 80 35 D.C. half sin wave D.C. D=0.2 50 40 30 20 10 0 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS D=0.1 D=0.05 D=0.8 D=0.5 30 0V t T D=0.8 D=0.5 Io VR D=t/T VR=480V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 70 FORWARD POWER DISSIPATION : Pf(W) 60 25 20 half sin wave 15 D=0.2 10 5 0 0 30 60 90 120 150 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) D=0.05 D=0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A