RFX10TF6S

Super Fast Recovery Diode RFX10TF6S  Series Ultra Fast Recovery  Dimensions (Unit : mm) +0.3 -0.1 +0.3 -0.1 +0.2 -0.1  Structure  Applications General rectification +0.4 -0.2  Features 1)Single type.(TO-220) 2)High switching speed 3)Soft Recovery (1) (3) +0.1 -0.05  Construction Silicon epitaxial planer  Absolute maximum ratings (Tc=25  C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature 1.6MAX RFX10 TF6S (1) (3) Symbol VRM VR Io IFSM Tj Tstg Conditions Duty  0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=57 C Limits 600 600 10 100 150 -55 to +150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C  Electrical characteristics (Tj=25  C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 2 0.15 16 - Max. 2.5 10 30 3.5 Unit V A ns C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RFX10TF6S Electrical characteristics curves 100 　 Data Sheet 1000000 1000 Tj=150 C Tj=125 C Tj=125 FORWARD CURRENT : IF(A) Tj=150 10 100000 f=1MHz Tj=25 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 600 REVERSE CURRENT : IR(nA) 10000 Tj=75 C 1000 Tj=25 C 100 Tj=25 Tj=75 1 100 10 0.1 0 1000 2000 3000 4000 5000 1 0 100 200 300 400 500 10 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 2300 1000 250 FORWARD VOLTAGE : VF(mV) 100 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 2200 REVERSE CURRENT : IR(nA) Tｊ=25 C IF=10A n=20pcs Tｊ=25 C VR=600V n=20pcs 240 Ta=25 C f=1MHz VR=0V n=10pcs 230 2100 AVE : 140.3nA 220 AVE : 224.6pF 210 2000 10 1900 AVE : 1976mV 1800 1 200 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs RESERVE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : IFSM(A) 150 PEAK SURGE FORWARD CURRENT : IFSM(A) 25 20 15 10 AVE : 15.8ns 100 AVE : 163.5A 100 10 50 IFSM 8.3ms 1cyc IFSM 8.3ms 8.3ms 5 0 1cyc. 1 1 10 100 0 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 10 8 IFSM time 100 6 AVE : 5.80kV 4 AVE : 1.08kV 2 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) Rth(j-c) 1 10 1 10 100 0 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t(ms) IFSM-t CHARACTERISTICS ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.A RFX10TF6S 45 D.C. 40 35 D=0.8 D=0.5 half sin wave D=0.2 D=0.1 20 15 10 5 0 0 3 6 9 12 15 18 D=0.05 14 D=0.8 16 D.C. 　 0A 0V t Io VR D=t/T VR=480V Tj=150 C Data Sheet AVERAGE RECTIFIED FORWARD CURRENT : Io(A) T 12 10 FORWARD POWER DISSIPATION : Pf(W) D=0.5 30 25 half sin wave 8 6 4 2 0 0 30 60 90 120 150 D=0.2 D=0.1 D=0.05 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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