RGC80TSX8R
1800V 40A Field Stop Trench IGBT
Datasheet
lOutline
VCES
1800V
40A
2.2V
535W
IC (100°C)
VCE(sat) (Typ.)
PD
TO-247N
(1) (2)(3)
lInner Circuit
lFeatures
1) Low Collector - Emitter Saturation Voltage
(2)
2) High Speed Switching
(1) Gate
(2) Collector
(3) Emitter
*1
3) Low Switching Loss & Soft Switching
(1)
4) Monolithic Body Diode
*1 Monolithic Body Diode
(3)
with Low Forward Voltage
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
lApplication
Packaging
Voltage - resonance Inverter
Reel Size (mm)
-
Tape Width (mm)
-
IH
Type
Tube
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGC80TSX8R
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
1800
V
Gate - Emitter Voltage
VGES
±30
V
TC = 25°C
IC
80
A
TC = 100°C
IC
40
A
120
A
Collector Current
Pulsed Collector Current
Diode Forward Current
ICP
TC = 25°C
IF
80
A
TC = 100°C
IF
40
A
IFP*1
80
A
TC = 25°C
PD
535
W
TC = 100°C
PD
267
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Diode Pulsed Forward Current
Power Dissipation
*1
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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1/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lThermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.28
C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
0.28
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
Conditions
BVCES IC = 10μA, VGE = 0V
Values
Unit
Min.
Typ.
Max.
1800
-
-
V
Collector Cut - off Current
ICES
VCE = 1860V, VGE= 0V
-
-
10
μA
Gate - Emitter Leakage
Current
IGES
VGE = ±30V, VCE = 0V
-
-
±200
nA
5.0
6.0
7.0
V
-
2.2
5.0
V
-
2.9
-
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 120.7mA
IC = 40A, VGE = 15V
VCE(sat) Tj = 25°C
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Tj = 175°C
2/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
9550
-
Output Capacitance
Coes
VGE = 0V
-
115
-
Reverse transfer Capacitance
Cres
f = 1MHz
-
102
-
Total Gate Charge
Qg
VCE = 600V
-
468
-
Gate - Emitter Charge
Qge
IC = 40A
-
93
-
Gate - Collector Charge
Qgc
VGE = 15V
-
155
-
Turn - on Delay Time
td(on)
-
80
-
-
53
-
-
565
-
-
55
-
-
1.85
-
-
1.60
2.15
-
68
-
-
52
-
-
670
-
-
55
-
-
1.95
-
-
2.00
-
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
Turn - on Delay Time
td(on)
tr
Rise Time
Turn - off Delay Time
td(off)
Fall Time
tf
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
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© 2019 ROHM Co., Ltd. All rights reserved.
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
3/10
Unit
pF
nC
ns
mJ
ns
mJ
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Tj = 25°C
-
1.8
2.3
Tj = 175°C
-
2.4
-
Unit
IF = 40A, VGE = 0V
Diode Forward Voltage
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VF
4/10
V
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.2 Collector Current
vs. Case Temperature
90
80
500
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation
vs. Case Temperature
600
400
300
200
100
0
70
60
50
40
30
20
Tj ≤ 175ºC
VGE ≥ 15V
10
0
25
50
0
75 100 125 150 175
0
Case Temperature : TC [°C ]
75 100 125 150 175
Fig.4 Reverse Bias Safe Operating Area
1000
100
Collector Current : IC [A]
1000
Collector Current : IC [A]
50
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
10μs
10
100μs
1
0.1
0.01
25
TC = 25ºC
Single Pulse
1
10
100
1000
10000
Collector To Emitter Voltage : VCE [V]
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100
10
1
0.1
0.01
Tj ≤ 175ºC
VGE = 15V
1
10
100
1000
10000
Collector To Emitter Voltage : VCE [V]
5/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
80
Tj = 25ºC
VGE = 20V
60
Collector Current : IC [A]
Collector Current : IC [A]
80
Fig.6 Typical Output Characteristics
VGE = 15V
40
VGE = 10V
VGE = 8V
20
0
0
1
2
3
4
VGE = 20V
60
VGE = 15V
40
VGE = 10V
20
0
5
Tj = 175ºC
Collector To Emitter Voltage : VCE [V]
VGE = 8V
0
80
VGE = 15V
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Collector Current : IC [A]
VCE = 10V
60
Tj = 175ºC
40
Tj = 25ºC
20
0
2
2
4
6
8
10
4
5
12
IC = 80A
3
IC = 40A
2
IC = 20A
1
0
Gate To Emitter Voltage : VGE [V]
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3
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
4
Fig.7 Typical Transfer Characteristics
0
1
Collector To Emitter Voltage : VCE [V]
25
50
75
100 125 150 175
Junction Temperature : Tj [°C ]
6/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Tj = 175ºC
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Tj = 25ºC
IC = 80A
15
IC = 40A
IC = 20A
10
5
0
5
10
15
IC = 40A
IC = 20A
10
5
0
20
IC = 80A
15
5
Gate To Emitter Voltage : VGE [V]
10
15
20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
Fig.12 Typical Switching Energy Losses
vs. Collector Current
100
100
Switching Energy [mJ]
Switching Time [ns]
td(off)
tf
td(on)
tr
10
1
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
10
20
30
40
50
60
70
80
Eon
1
Eoff
0.1
Collecter Current : IC [A]
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© 2019 ROHM Co., Ltd. All rights reserved.
10
10
20
30
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
40
50
60
70
80
Collecter Current : IC [A]
7/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.13 Typical Capacitance
vs. Collector to Emitter Voltage
100000
Gate To Emitter Voltage : V GE [V]
15
Cies
10000
Capacitance [pF]
Fig.14 Typical Gate Charge
Coes
Cres
1000
100
10
0.01
f = 1MHz
VGE = 0V
Tj = 25ºC
0.1
1
10
10
5
0
100
Collector To Emitter Voltage : VCE [V]
VCC = 600V
IC = 40A
Tj = 25ºC
0
100
200
300
400
500
Gate Charge : QG [nC]
Forward Current : IF [A]
Fig.15 Typical Diode Forward Current
vs. Forward Voltage
80
60
Tj = 25ºC
Tj = 175ºC
40
20
0
VGE = 0V
0
1
2
3
4
5
Forward Voltage : VF [V]
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8/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
lElectrical Characteristic Curves
Fig.16 Typical Transient Thermal Impedance
Transient Thermal Impedance
: Zθ(j-c) [°C/W]
1
0.1
0.2
D = 0.5
0.1
0.01
PDM
t1
0.05
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.001
0.01
0.0001
1E-6
Single Pulse
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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9/10
2019.04 - Rev.B
Datasheet
RGC80TSX8R
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
Fig.17 Inductive Load Circuit
IC
10%
tr
td(on)
ton
tf
td(off)
toff
VCE
10%
Eon
Eoff
VCE(sat)
Fig.18 Inductive Load Waveform
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10/10
2019.04 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
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equipment, medical systems, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102S