RGC80TSX8RGC11

RGC80TSX8RGC11

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO-247-3

  • 描述:

    特性:低集电极-发射极饱和电压。 高速开关。 低开关损耗和软开关。 具有低正向电压的单片体二极管。 无铅镀铅;符合RoHS标准。应用:电压谐振逆变器

  • 数据手册
  • 价格&库存
RGC80TSX8RGC11 数据手册
RGC80TSX8R 1800V 40A Field Stop Trench IGBT Datasheet lOutline VCES 1800V 40A 2.2V 535W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit lFeatures 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching (1) Gate (2) Collector (3) Emitter *1 3) Low Switching Loss & Soft Switching (1) 4) Monolithic Body Diode *1 Monolithic Body Diode (3) with Low Forward Voltage 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplication Packaging Voltage - resonance Inverter Reel Size (mm) - Tape Width (mm) - IH Type Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGC80TSX8R lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1800 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 80 A TC = 100°C IC 40 A 120 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 80 A TC = 100°C IF 40 A IFP*1 80 A TC = 25°C PD 535 W TC = 100°C PD 267 W Tj -40 to +175 °C Tstg -55 to +175 °C Diode Pulsed Forward Current Power Dissipation *1 Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/10 2019.04 - Rev.B Datasheet RGC80TSX8R lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.28 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.28 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 1800 - - V Collector Cut - off Current ICES VCE = 1860V, VGE= 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 2.2 5.0 V - 2.9 - Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VGE(th) VCE = 5V, IC = 120.7mA IC = 40A, VGE = 15V VCE(sat) Tj = 25°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Tj = 175°C 2/10 2019.04 - Rev.B Datasheet RGC80TSX8R lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 9550 - Output Capacitance Coes VGE = 0V - 115 - Reverse transfer Capacitance Cres f = 1MHz - 102 - Total Gate Charge Qg VCE = 600V - 468 - Gate - Emitter Charge Qge IC = 40A - 93 - Gate - Collector Charge Qgc VGE = 15V - 155 - Turn - on Delay Time td(on) - 80 - - 53 - - 565 - - 55 - - 1.85 - - 1.60 2.15 - 68 - - 52 - - 670 - - 55 - - 1.95 - - 2.00 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) Fall Time tf Turn - on Switching Loss Eon Turn - off Switching Loss Eoff www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. IC = 40A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 40A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery 3/10 Unit pF nC ns mJ ns mJ 2019.04 - Rev.B Datasheet RGC80TSX8R lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Tj = 25°C - 1.8 2.3 Tj = 175°C - 2.4 - Unit IF = 40A, VGE = 0V Diode Forward Voltage www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. VF 4/10 V 2019.04 - Rev.B Datasheet RGC80TSX8R lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 90 80 500 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 600 400 300 200 100 0 70 60 50 40 30 20 Tj ≤ 175ºC VGE ≥ 15V 10 0 25 50 0 75 100 125 150 175 0 Case Temperature : TC [°C ] 75 100 125 150 175 Fig.4 Reverse Bias Safe Operating Area 1000 100 Collector Current : IC [A] 1000 Collector Current : IC [A] 50 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area 10μs 10 100μs 1 0.1 0.01 25 TC = 25ºC Single Pulse 1 10 100 1000 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 100 10 1 0.1 0.01 Tj ≤ 175ºC VGE = 15V 1 10 100 1000 10000 Collector To Emitter Voltage : VCE [V] 5/10 2019.04 - Rev.B Datasheet RGC80TSX8R lElectrical Characteristic Curves Fig.5 Typical Output Characteristics 80 Tj = 25ºC VGE = 20V 60 Collector Current : IC [A] Collector Current : IC [A] 80 Fig.6 Typical Output Characteristics VGE = 15V 40 VGE = 10V VGE = 8V 20 0 0 1 2 3 4 VGE = 20V 60 VGE = 15V 40 VGE = 10V 20 0 5 Tj = 175ºC Collector To Emitter Voltage : VCE [V] VGE = 8V 0 80 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector Current : IC [A] VCE = 10V 60 Tj = 175ºC 40 Tj = 25ºC 20 0 2 2 4 6 8 10 4 5 12 IC = 80A 3 IC = 40A 2 IC = 20A 1 0 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 0 1 Collector To Emitter Voltage : VCE [V] 25 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/10 2019.04 - Rev.B Datasheet RGC80TSX8R lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 80A 15 IC = 40A IC = 20A 10 5 0 5 10 15 IC = 40A IC = 20A 10 5 0 20 IC = 80A 15 5 Gate To Emitter Voltage : VGE [V] 10 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Energy Losses vs. Collector Current 100 100 Switching Energy [mJ] Switching Time [ns] td(off) tf td(on) tr 10 1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 10 20 30 40 50 60 70 80 Eon 1 Eoff 0.1 Collecter Current : IC [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10 10 20 30 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 40 50 60 70 80 Collecter Current : IC [A] 7/10 2019.04 - Rev.B Datasheet RGC80TSX8R lElectrical Characteristic Curves Fig.13 Typical Capacitance vs. Collector to Emitter Voltage 100000 Gate To Emitter Voltage : V GE [V] 15 Cies 10000 Capacitance [pF] Fig.14 Typical Gate Charge Coes Cres 1000 100 10 0.01 f = 1MHz VGE = 0V Tj = 25ºC 0.1 1 10 10 5 0 100 Collector To Emitter Voltage : VCE [V] VCC = 600V IC = 40A Tj = 25ºC 0 100 200 300 400 500 Gate Charge : QG [nC] Forward Current : IF [A] Fig.15 Typical Diode Forward Current vs. Forward Voltage 80 60 Tj = 25ºC Tj = 175ºC 40 20 0 VGE = 0V 0 1 2 3 4 5 Forward Voltage : VF [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 8/10 2019.04 - Rev.B Datasheet RGC80TSX8R lElectrical Characteristic Curves Fig.16 Typical Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 0.1 0.2 D = 0.5 0.1 0.01 PDM t1 0.05 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.02 0.001 0.01 0.0001 1E-6 Single Pulse 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Pulse Width : t1 [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 9/10 2019.04 - Rev.B Datasheet RGC80TSX8R ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.17 Inductive Load Circuit IC 10% tr td(on) ton tf td(off) toff VCE 10% Eon Eoff VCE(sat) Fig.18 Inductive Load Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10/10 2019.04 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. R1102S
RGC80TSX8RGC11 价格&库存

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RGC80TSX8RGC11
  •  国内价格 香港价格
  • 1+92.402061+11.95221
  • 30+54.8920230+7.10029

库存:76

RGC80TSX8RGC11
    •  国内价格 香港价格
    • 1+49.255671+6.37123
    • 5+40.533235+5.24298
    • 10+35.3628410+4.57419
    • 30+31.9103730+4.12761
    • 50+31.2215450+4.03851
    • 60+31.0555660+4.01704
    • 100+30.70699100+3.97195

    库存:450