RGPR30NS40HRTL

RGPR30NS40HR Datasheet 400V 30A Ignition IGBT Outline BVCES 40030V IC 30A VCE(sat) (Typ.) 1.6V EAS 300mJ LPDS (TO-263S) / TO-262 (2) (1) (3) (1)(2)(3) Inner Circuit Features 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Self-Clamped Inductive Switching Energy (1) 3) Built in Gate-Emitter Protection Diode 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 6) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Packaging Applications Ignition Coil Driver Circuits Type Solenoid Driver Circuits Taping / Tube Reel Size (mm) 330 / - Tape Width (mm) 24 / - Basic Ordering Unit (pcs) 1,000 / 1,000 Packing Code TL / C9 Marking RGPR30NS40 Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 430 V Emitter-Collector Voltage (VGE = 0V) VEC 25 V Gate - Emitter Voltage VGES 10 V IC 30 A EAS 300 mJ 180 mJ Collector Current Avalanche Energy (Single Pulse) Tj = 25°C Tj = 150°C EAS *2 Power Dissipation PD 125 W Operating Junction Temperature Tj 40 to +175 °C Tstg 55 to +175 °C Storage Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Thermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 1.20 Unit °C/W Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C 370 400 430 V Tj = 40 to 175°C*2 365 - 435 V IC = 2mA, VGE = 0V Collector - Emitter Breakdown Voltage BVCES Emitter - Collector Breakdown Voltage BVEC IC = 10mA, VGE = 0V 25 35 - V Gate - Emitter Breakdown Voltage BVGES IG = 5mA, VCE = 0V 12 - 17 V Tj = 25°C - - 7 μA Tj = 150°C*2 - - 100 μA 0.4 0.6 1.2 mA 1.3 1.7 2.1 V - 1.3 - V Tj = 25°C - 1.60 2.00 V Tj = 150°C - 1.80 - V Tj = 25°C - 1.17 1.50 V Tj = 150°C - 1.19 - V VCE = 250V, VGE = 0V Collector Cut - off Current Gate - Emitter Leakage Current ICES IGES VGE = 10V, VCE = 0V VCE = 5V, IC = 12mA Gate - Emitter Threshold Voltage VGE(th) Tj = 25°C Tj = 150°C*2 IC = 12A, VGE = 5V Collector - Emitter Saturation Voltage VCE(sat) IC = 5A, VGE = 4.5V Collector - Emitter Saturation Voltage www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.70 2.10 V Tj = 150°C - 1.90 - V IC = 12A, VGE = 4V Collector - Emitter Saturation Voltage VCE(sat) Input Capacitance Cies VCE = 10V - 1330 - Output Capacitance Coes VGE = 0V - 220 - Reverse Transfer Capacitance Cres f = 1MHz - 71 - Total Gate Charge Qg VCE = 12V, IC = 10A, VGE = 5V - 22 - 0.11 0.19 0.50 0.10 0.18 0.50 0.9 1.4 4.0 tf 0.8 1.8 5.5 td(on) - 0.18 - - 0.21 - - 1.7 - - 3.0 - Tj = 25°C 300 - - mJ Tj = 150°C*2 180 - - mJ Turn - on Delay Time*1,*2 Rise Time*1,*2 tr Turn - off Delay Time *1,*2 Fall Time*1,*2 Turn - on Delay Time Rise Time td(on) *1 *1 Turn - off Delay Time *1 Fall Time*1 td(off) tr td(off) IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C tf pF nC μs μs L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Avalanche Energy (Single Pulse) EAS Gate Series Resistance RG 70 100 130 Ω Gate - Emitter Resistance RGE 8 16 24 kΩ *1) Assurance items according to our measurement definition (Fig.18) *2) Design assurance items www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 3/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristic Curves Fig.1 Typical Output Characteristics 30 30 Tj= 40ºC VGE= 10V VGE= 8V 20 VGE= 5V VGE= 4.5V 15 Tj= 25ºC VGE= 10V 25 VGE= 4V Collector Current : IC [A] 25 Collector Current : IC [A] Fig.2 Typical Output Characteristics VGE= 3.5V 10 VGE= 8V 20 VGE= 4.5V 15 VGE= 3.5V 10 5 5 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] 30 1.4 Collector To Emitter Saturation Voltage : VCE(sat) [V] VGE= 8V VGE= 4V VGE= 4.5V 15 3 4 5 IC= 5A 1.3 VGE= 5V 20 2 Fig.4 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Tj= 175ºC VGE= 10V 25 1 Collector To Emitter Voltage : VCE[V] Fig.3 Typical Output Characteristics Collector Current : IC [A] VGE= 4V VGE= 5V VGE= 3.5V 4V 4.5V 1.2 VGE= 3.5V 10 1.1 5 0 0 1 2 3 4 5 8V 10V 1 -50 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 5V 0 50 100 150 200 Junction Temperature : Tj [ºC] 4/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristic Curves Fig.5 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Fig.6 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4.5 IC= 10A Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 2 VGE= 3.5V 1.9 4V 1.8 4.5V 1.7 1.6 1.5 1.4 5V 8V 10V 1.3 -50 0 50 100 150 VGE= 5V 4 3.5 10A 3 2.5 2 5A 8A 1.5 　1 0.5 4.5A 0 -50 200 Junction Temperature : Tj [ºC] 0 50 100 1A 150 200 Junction Temperature : Tj [ºC] Fig.7 Typical Transfer Characteristics Fig.8 Typical Gate To Emitter Threshold Voltage vs. Junction Temperature 30 2.5 Gate To Emitter Threshold Voltage : VGE (th) [V] VCE= 5V 25 Collector Current : IC [A] IC= 20A 20 15 10 Tj= 175ºC 5 Tj= 25ºC Tj= 40ºC 0 0 1 2 3 4 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 5 -50 Gate to Emitter Voltage : VGE [V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VCE= 5V IC= 10mA 2.3 0 50 100 150 200 Junction Temperature : Tj [ºC] 5/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristic Curves Fig.9 Typical Leakage Current vs. Junction Temperature Fig.10 Typical Collector To Emitter Breakdown Voltage vs. Junction Temperature Collector To Emitter Breakdown Voltage : BVCES [V] Leakage Current : ICES/IEC [A] 10000 1000 VEC= 25V 100 VCES= 300V 10 1 VCES= 250V 0.1 0.01 -50 0 50 100 150 410 VGE= 0V 400 ICES= 2mA 390 ICES= 1mA 380 -50 200 Junction Temperature : Tj [ºC] 50 100 150 200 Junction Temperature : Tj [ºC] Fig.11 Typical Self Clamped Inductive Switching Current vs. Inductance Fig.12 Typical Gate Charge 5 40 VCC= 30V VGE= 5V RG= 1kΩ 35 30 Gate To Emitter Voltage : VGE [V] Self Clamped Inductive Switching Current : IAS [A] 0 25 20 15 10 5 4 3 2 VCC= 12V IC= 10A Tj= 25ºC 1 0 0 0 1 2 3 4 5 6 7 8 9 0 10 Inductance : L [mH] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 5 10 15 20 25 Gate Charge : Qg [nC] 6/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristic Curves Fig.14 Typical Switching Time vs. Junction Temperature Fig.13 Typical Capacitance vs. Collector To Emitter Voltage 10000 10 VCC= 300V, IC= 8A, VGE= 5V, L= 5mH Cies 100 Switching Time [μs] Capacitance [pF] 1000 Coes 10 td(off) 1 tr Cres f= 1MHz VGE= 0V Tj= 25ºC 1 0.01 tf td(on) 0.1 0.1 1 10 100 0 25 50 75 100 125 150 175 200 Junction Temperature : Tj [ºC] Collector To Emitter Voltage : VCE[V] Fig.15 Forward Bias Safe Operating Area Collector Current : IC [A] 1000 100 10µs 10 100µs 1 1ms 0.1 TC= 25ºC Single Pulse 10ms 0.01 1 10 100 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 7/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Electrical Characteristic Curves Fig.16 Transient Thermal Impedance 1 Transient Thermal Impedance : ZthJC [ºC/W] D= 0.5 0.3 0.2 0.1 0.1 Single Pulse PDM 0.01 0.05 0.01 0.00001 0.02 0.0001 t1 C1 C2 C3 R1 R2 R3 615.3u 3.003m 1.360m 231.2m 160.8m 408.0m 0.001 0.01 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 0.1 1 Pulse Width : t1[s] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 8/9 2017.08 - Rev.B Datasheet RGPR30NS40HR Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.17 Inductive Load Switching Circuit IC 10% td(off) td(on) tf tr toff ton VCE VCE(sat) Fig.18 Inductive Load Switching Waveform Self Clamped Inductive Switching Circuit and Waveform IC Vclamp D.U.T. VCE VG VCC VCE(sat) EAS Fig.19 Self Clamped Inductive Switching Ciruit www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Fig.20 Self Clamped Inductive Switching Waveform 9/9 2017.08 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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