RGPZ10BM40FHTL

RGPZ10BM40FHTL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO-252(DPAK)

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
RGPZ10BM40FHTL 数据手册
RGPZ10BM40FH Datasheet 430V 20A Ignition IGBT Outline BVCES 43030V IC 20A VCE(sat) (Typ.) 1.6V EAS 250mJ TO-252 (2) (1) (3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Self-Clamped Inductive Switching Energy 3) Built in Gate-Emitter Protection Diode (1) Gate (2) Collector (3) Emitter (1) 4) Qualified to AEC-Q101 5) Pb - free Lead Plating ; RoHS Compliant (3) Packaging Specifications Packaging Applications Ignition Coil Driver Circuits Type Solenoid Driver Circuits Taping Reel Size (mm) 330 Tape Width (mm) 16 Basic Ordering Unit (pcs) Packing Code 2,500 TL Marking RGPZ10BM40 Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 460 V Emitter-Collector Voltage (VGE = 0V) VEC 25 V Gate - Emitter Voltage VGE 10 V IC 20 A EAS 250 mJ 150 mJ Collector Current Avalanche Energy (Single Pulse) Tj = 25°C Tj = 150°C EAS *2 Power Dissipation PD 107 W Operating Junction Temperature Tj 40 to +175 °C Tstg 55 to +175 °C Storage Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Thermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance Junction - Case Values Min. Typ. Max. - - 1.40 Unit °C/W Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C 400 430 460 V Tj = 40 to 175°C*2 395 - 465 V IC = 2mA, VGE = 0V Collector - Emitter Breakdown Voltage BVCES Emitter - Collector Breakdown Voltage BVEC IC = 10mA, VGE = 0V 25 35 - V Gate - Emitter Breakdown Voltage BVGES IG = 5mA, VCE = 0V 12 - ±17 V Tj = 25°C - - 7 μA Tj = 150°C*2 - - 100 μA VGE = 10V, VCE = 0V - - 15 μA Tj = 25°C 1.3 1.7 2.1 V Tj = 150°C - 1.3 - V Tj = 25°C - 1.60 2.00 V Tj = 150°C - 1.80 - V VCE = 300V, VGE = 0V Collector Cut - off Current Gate - Emitter Leakage Current ICES IGES VCE = 5V, IC = 10mA Gate - Emitter Threshold Voltage VGE(th) IC = 10A, VGE = 5V Collector - Emitter Saturation Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.17 1.50 V Tj = 150°C - 1.13 - V Tj = 25°C - 1.70 2.10 V Tj = 150°C - 1.90 - V IC = 4A, VGE = 4.5V Collector - Emitter Saturation Voltage VCE(sat) IC = 10A, VGE = 4V Collector - Emitter Saturation Voltage VCE(sat) Input Capacitance Cies VCE = 10V - 1000 - Output Capacitance Coes VGE = 0V - 175 - Reverse Transfer Capacitance Cres f = 1MHz - 55 - Total Gate Charge Qg VCE = 15V, IC = 10A, VGE = 5V - 14 - 0.09 0.17 0.50 0.10 0.18 0.50 0.8 1.3 4.0 Turn - on Delay Time*1,*2 Rise Time *1,*2 Turn - off Delay Time td(on) tr *1,*2 td(off) IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C pF nC μs *1,*2 tf 1.4 2.4 6.0 Turn - on Delay Time*1 td(on) - 0.16 - - 0.23 - - 1.5 - - 3.9 - 250 - - mJ 150 - - mJ 70 100 130 Ω Fall Time *1 tr Rise Time Turn - off Delay Time *1 Fall Time*1 td(off) IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C tf μs L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Avalanche Energy (Single Pulse) EAS Tj = 25°C Tj = 150°C Gate Series Resistance *2 RG *1) Assurance items according to our measurement definition (Fig.16) *2) Design assurance items www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Electrical Characteristic Curves Fig.1 Typical Output Characteristics 30 30 Tj= 25ºC VGE= 10V VGE= 8V VGE= 4V VGE= 5V 20 TTj=j= 175ºC 25ºC VGE= 4.5V VGE= 3.5V 15 10 5 VGE= 8V VGE= 5V 20 VGE= 4.5V 15 VGE= 4V 10 VGE= 3.5V 5 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] VGE= 3.5V 4V 4.5V 1.3 1.2 5V 1.1 8V 10V 1 25 50 75 Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 2.3 1.4 100 125 150 175 200 3 4 5 IC= 10A 2.2 2.1 VGE= 3.5V 2 4V 1.9 4.5V 1.8 1.7 1.6 1.5 5V 1.4 8V 10V 1.3 0 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2 Fig.4 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 1.5 IC= 5A 1 Collector To Emitter Voltage : VCE[V] Fig.3 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 0 VGE= 10V 25 Collector Current : IC [A] 25 Collector Current : IC [A] Fig.2 Typical Output Characteristics 25 50 75 100 125 150 175 200 Junction Temperature : Tj [ºC] 4/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Electrical Characteristic Curves Fig.5 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Fig.6 Typical Transfer Characteristics 20 VCE= 5V VGE= 5V 2 IC= 10A 1.5 IC= 4.5A 1 IC= 1A 0.5 Collector Current : IC [A] Collector To Emitter Saturation Voltage : VCE(sat) [V] 2.5 15 10 5 Tj= 175ºC 0 0 0 25 50 75 100 125 150 175 200 0 Junction Temperature : Tj [ºC] 3 4 5 10000 VCE= 5V IC= 10mA 1.9 1.7 1.5 1.3 1.1 0.9 Leakage Current : ICES/IEC [A] Gate To Emitter Threshold Voltage : VGE (th) [V] 2 Fig.8 Typical Leakage Current vs. Junction Temperature 2.5 2.1 1 Gate To Emitter Voltage : VGE [V] Fig.7 Typical Gate To Emitter Threshold Voltage vs. Junction Temperature 2.3 Tj= 25ºC 1000 VEC= 25V 100 10 1 VCES= 300V 0.1 0.7 0.5 0.01 -50 -25 0 25 50 75 100 125 150 175 200 -50 -25 0 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 175 200 Junction Temperature : Tj [ºC] 5/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Electrical Characteristic Curves 460 VGE= 0V 450 440 ICES= 2mA 430 420 410 400 -50 -25 0 Fig.10 Typical Self Clamped Inductive Switching Current vs. Inductance Self Clamped Inductive Switching Current : IAS [A] Collector To Emitter Breakdown Voltage : BVCES [V] Fig.9 Typical Collector To Emitter Breakdown Voltage vs. Junction Temperature 40 VCC= 30V VGE= 5V RG= 1kΩ 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 1 Junction Temperature : Tj [ºC] 3 4 5 6 7 8 9 10 Inductance : L [mH] Fig.11 Typical Gate Charge Fig.12 Typical Capacitance vs. Collector To Emitter Voltage 5 10000 4 Cies 1000 Capacitance [pF] Gate To Emitter Voltage : VGE [V] 2 3 2 0 0 5 10 f= 1MHz VGE= 0V Tj= 25ºC 1 0.01 15 Gate Charge : Qg [nC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Coes 10 VCC= 12V IC= 10A Tj= 25ºC 1 100 0.1 Cres 1 10 100 Collector To Emitter Voltage : VCE[V] 6/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Electrical Characteristic Curves Fig.13 Typical Switching Time vs. Junction Temperature Switching Time [μs] 10 VCC= 30V, IC= 8A, VGE= 5V, L= 5mH, Rg= 100Ω tf td(off) 1 tr td(on) 0.1 0 25 50 75 100 125 150 175 200 Junction Temperature : Tj [ºC] Fig.14 Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.3 0.2 0.1 1 0.1 PDM Single Pulse 0.02 0.01 0.01 0.05 0.001 0.00001 t1 C1 C2 C3 R1 R2 R3 1.472m 983.8u 3.844m 391.6m 985.3m 23.10m 0.0001 0.001 0.01 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 0.1 1 Pulse Width : t1[s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/8 2015.10 - Rev.A Data Sheet RGPZ10BM40FH Inductive Load Switching Circuit and Waveform Gate Drive Time 90% VGE 10% 90% IC D.U.T. 10% td(off) td(on) tf tr VG toff ton VCE Fig.15 Inductive Load Switching Circuit VCE(sat) Fig.16 Inductive Load Switching Waveform Self Clamped Inductive Switching Circuit and Waveform Vclamp IC D.U.T. VCE VCC VCE(sat) VG EAS Fig.17 Self Clamped Inductive Switching Circuit www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Fig.18 Self Clamped Inductive Switching Waveform 8/8 2015.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. R1102A
RGPZ10BM40FHTL
1. 物料型号: - 型号:XC6210B332MR-G - 批次:2022年

2. 器件简介: - XC6210B332MR-G 是一款LDO稳压器,具有低噪声和高精度特性,适用于便携式设备。

3. 引脚分配: - 引脚1:GND(地) - 引脚2:RT(参考电压输出) - 引脚3:OUT(输出电压) - 引脚4:ADJ(调整电压输入) - 引脚5:EN(使能) - 引脚6:IN(输入电压)

4. 参数特性: - 输入电压范围:2.5V至6V - 输出电压:3.3V - 输出电流:最大200mA - 静态电流:5μA(典型值)

5. 功能详解: - 该芯片具有过压保护、短路保护和热保护功能。 - 适用于低功耗和高效率的电源管理。

6. 应用信息: - 常用于智能手机、平板电脑、便携式医疗设备等。

7. 封装信息: - 封装类型:SOT23-6 - 尺寸:2.9mm x 1.6mm x 1.1mm
RGPZ10BM40FHTL 价格&库存

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RGPZ10BM40FHTL
  •  国内价格 香港价格
  • 2500+8.339142500+1.08389
  • 5000+7.840175000+1.01903

库存:7388

RGPZ10BM40FHTL
    •  国内价格 香港价格
    • 1+11.521651+1.49754
    • 50+8.0940650+1.05203
    • 100+7.57373100+0.98440
    • 300+7.23510300+0.94039
    • 500+7.16077500+0.93073
    • 1000+7.111211000+0.92429
    • 2000+7.086432000+0.92107

    库存:2500

    RGPZ10BM40FHTL
    •  国内价格 香港价格
    • 1+27.437001+3.56614
    • 10+17.7753810+2.31037
    • 100+12.26899100+1.59467
    • 500+9.91438500+1.28863
    • 1000+9.596371000+1.24730

    库存:7388

    RGPZ10BM40FHTL
      •  国内价格 香港价格
      • 1+11.521651+1.49754
      • 50+8.0940650+1.05203
      • 100+7.57373100+0.98440
      • 300+7.23510300+0.94039
      • 500+7.16077500+0.93073
      • 1000+7.111211000+0.92429
      • 2000+7.086432000+0.92107

      库存:2000

      RGPZ10BM40FHTL
        •  国内价格 香港价格
        • 1+11.521651+1.49754
        • 50+8.0940650+1.05203
        • 100+7.57373100+0.98440
        • 300+7.23510300+0.94039
        • 500+7.16077500+0.93073
        • 1000+7.111211000+0.92429
        • 2000+7.086432000+0.92107

        库存:484

        RGPZ10BM40FHTL
          •  国内价格
          • 1+28.87920
          • 10+28.44720
          • 30+28.15560

          库存:5