RGS30TSX2DHRC11

RGS30TSX2DHR Datasheet 1200V 15A Field Stop Trench IGBT lOutline VCES 1200V 15A 1.7V 267W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector (3) Emitter *1 (1) 2) Short Circuit Withstand Time 10μs *1 Built in FRD 3) Qualified to AEC-Q101 (3) 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication General Inverter for Automotive and Industrial Use Type Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS30TSX2D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 30 A TC = 100°C IC 15 A ICP*1 45 A TC = 25°C IF 30 A TC = 100°C IF 15 A IFP*1 45 A TC = 25°C PD 267 W TC = 100°C PD 133 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.56 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.10 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 1200 - - V Tj = 25℃ - - 10 μA Tj = 175℃*2 - 1 - mA VGE = ±30V, VCE = 0V - - ±500 nA 5.0 6.0 7.0 V - 1.70 2.10 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 1200V, VGE= 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 2.3mA IC = 15A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1272 - Output Capacitance Coes VGE = 0V - 66 - Reverse transfer Capacitance Cres f = 1MHz - 7.6 - Total Gate Charge Qg VCE = 500V - 41 - Gate - Emitter Charge Qge IC = 15A - 11 - Gate - Collector Charge Qgc VGE = 15V - 17 - Turn - on Delay Time td(on) - 30 - - 8.5 - - 70 - - 128 - - 0.74 - - 0.6 - - 29 - - 10 - - 69 - - 120 - - 0.81 - - 0.65 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff IC = 15A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 15A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 45A, VCC = 1050V Reverse Bias Safe Operating Area RBSOA Vp = 1200V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 600V VGE = 15V, Tj = 25°C 10 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 600V VGE = 15V, Tj = 150°C 8 - - μs *2 Design assurance without measurement www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.65 2.10 Tj = 175°C - 1.85 - - 157 - ns - 12.8 - A - 1.2 - μC IF = 15A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 281 - μJ Diode Reverse Recovery Time trr - 257 - ns Diode Peak Reverse Recovery Current Irr - 15.4 - A Diode Reverse Recovery Charge Qrr - 2.4 - μC Diode Reverse Recovery Energy Err - 775 - μJ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. IF = 15A VCC = 600V diF/dt = 500A/μs Tj = 25°C IF = 15A VCC = 600V diF/dt = 500A/μs Tj = 175°C 4/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 40 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 400 300 200 100 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 60 100 Collector Current : IC [A] 1000 Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 45 30 15 Tj ≤ 175ºC VGE = 15V TC = 25ºC Single Pulse 0 0.01 1 10 100 1000 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 0 300 600 900 1200 1500 Collector To Emitter Voltage : VCE [V] 5/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 45 45 Tｊ = 25ºC VGE = 12V 35 VGE = 20V 30 25 VGE = 15V 20 VGE = 10V 15 10 5 35 VGE = 20V 30 VGE = 15V 25 20 VGE = 12V VGE = 10V 15 10 VGE = 8V 5 VGE = 8V 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] VGE = 15V VCE = 10V Collector To Emitter Saturation Voltage : VCE(sat) [V] 35 30 25 20 15 10 5 2 Tj = 175ºC 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 45 40 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] Tｊ = 175ºC 40 Collector Current : IC [A] Collector Current : IC [A] 40 IC = 30A 3 IC = 15A 2 IC = 7.5A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 12 14 16 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC 8 IC = 30A 6 IC = 15A IC = 7.5A 4 2 0 8 IC = 30A 6 IC = 15A IC = 7.5A 4 2 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf Switching Time [ns] Switching Time [ns] 10 100 td(off) td(on) 10 tr tf 100 td(off) ｔd(on) 10 tr VCC = 600V, IC = 15A, VGE = 15V, Tj = 175ºC Inductive load VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 1 0 10 20 30 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 7/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 Eon 1 Eoff 0.1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 Eon 1 Eoff 0.1 VCC = 600V, VGE = 15V, IC = 15A, Tj = 175ºC Inductive load 0.01 0 10 20 30 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 100 Coes f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 30 40 50 Cres Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Capacitance [pF] Cies 10 20 Gate Resistance : RG [Ω] Collector Current : IC [A] 1000 10 VCC = 300V 10 VCC = 500V 5 IC = 15A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 15 30 45 Gate Charge : QG [nC] 8/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage 45 Fig.18 Typical Diode Reverce Recovery Time vs. Forward Current 500 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 40 35 30 25 20 15 10 Tj = 175ºC 5 400 300 Tj = 175ºC 200 100 Tj = 25ºC Tj = 25ºC 0 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF [V] 20 30 Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current 2 Reverse Recovery Energy Losses : Err [mJ] 20 Tj = 175ºC 15 10 Tj = 25ºC 5 10 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 25 Reverse Recovery Current : Irr [A] VCC = 600V diF/dt = 500A/μs Inductive load VCC = 600V diF/dt = 500A/μs Inductive load 0 VCC = 600V Tj = 175℃ Inductive load 1.5 RG = 10Ω 1 RG = 30Ω RG = 50Ω 0.5 0 0 10 20 30 0 Forward Current : IF [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 20 30 Forward Current : IF [A] 9/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance 1 0.2 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 D = 0.5 0.1 Single Pulse 0.01 PDM 0.02 0.01 t1 0.05 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC C1 400.8u 0.001 1E-5 1E-4 1E-3 C2 2.510m C3 12.89m 1E-2 R1 81.52m R2 263.0m 1E-1 R3 215.5m 1E+0 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 10 1 0.1 0.2 D = 0.5 PDM t1 0.1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse 0.01 0.02 C1 403.9u 0.05 0.01 1E-5 1E-4 1E-3 C2 1.415m 1E-2 C3 13.77m R1 226.9m R2 482.3m 1E-1 R3 390.8m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10/11 2020.06 - Rev.A Datasheet RGS30TSX2DHR ●Inductive Load Switching Circuit and Waveform D.U.T. Gate Drive Time D.U.T. 90% VGE VG 10% Fig.23 Inductive Load Circuit 90% IC td(on) tr trr , Qrr IF ton td(off) 10% tf toff VCE diF/dt 10% Irr Eon Fig.24 Diode Reverce Recovery Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.25 Inductive Load Waveform 11/11 2020.06 - Rev.A