RGS30TSX2HRC11

RGS30TSX2HR Datasheet 1200V 15A Field Stop Trench IGBT lOutline VCES 1200V 15A 1.7V 267W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures (1) Gate (2) Collector (3) Emitter 1) Low Collector - Emitter Saturation Voltage (1) 2) Short Circuit Withstand Time 10μs 3) Qualified to AEC-Q101 (3) 4) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication Heater for Automotive Type Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS30TSX2 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 30 A TC = 100°C IC 15 A ICP*1 45 A TC = 25°C PD 267 W TC = 100°C PD 133 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lThermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 0.56 Unit C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 1200 - - V Tj = 25℃ - - 10 μA Tj = 175℃*2 - 1 - mA VGE = ±30V, VCE = 0V - - ±500 nA 5.0 6.0 7.0 V - 1.70 2.10 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 1200V, VGE= 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 2.3mA IC = 15A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1272 - Output Capacitance Coes VGE = 0V - 66 - Reverse transfer Capacitance Cres f = 1MHz - 7.6 - Total Gate Charge Qg VCE = 500V - 41 - Gate - Emitter Charge Qge IC = 15A - 11 - Gate - Collector Charge Qgc VGE = 15V - 17 - Turn - on Delay Time td(on) - 30 - - 8.5 - - 70 - - 128 - - 0.74 - - 0.6 - - 29 - - 10 - - 69 - - 120 - - 0.81 - - 0.65 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff IC = 15A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 15A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 45A, VCC = 1050V Reverse Bias Safe Operating Area RBSOA Vp = 1200V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 600V VGE = 15V, Tj = 25°C 10 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 600V VGE = 15V, Tj = 150°C 8 - - μs *2 Design assurance without measurement www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 40 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 400 300 200 100 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 60 1000 100 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 45 30 15 Tj ≤ 175ºC VGE = 15V TC = 25ºC Single Pulse 0 0.01 1 10 100 1000 0 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 300 600 900 1200 1500 Collector To Emitter Voltage : VCE [V] 4/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 45 45 Tｊ = 25ºC VGE = 12V 35 VGE = 20V 30 25 VGE = 15V 20 VGE = 10V 15 10 5 35 VGE = 20V 30 VGE = 15V 25 20 VGE = 12V VGE = 10V 15 10 VGE = 8V 5 VGE = 8V 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] VGE = 15V VCE = 10V Collector To Emitter Saturation Voltage : VCE(sat) [V] 35 30 25 20 15 10 5 2 Tj = 175ºC 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 45 40 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] Tｊ = 175ºC 40 Collector Current : IC [A] Collector Current : IC [A] 40 IC = 30A 3 IC = 15A 2 IC = 7.5A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 12 14 16 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC 8 IC = 30A 6 IC = 15A IC = 7.5A 4 2 0 8 IC = 30A 6 IC = 15A IC = 7.5A 4 2 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf Switching Time [ns] Switching Time [ns] 10 100 td(off) td(on) 10 tr tf 100 td(off) ｔd(on) 10 tr VCC = 600V, IC = 15A, VGE = 15V, Tj = 175ºC Inductive load VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 1 0 10 20 30 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 6/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 Eon 1 Eoff 0.1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 Eon 1 Eoff 0.1 VCC = 600V, VGE = 15V, IC = 15A, Tj = 175ºC Inductive load 0.01 0 10 20 30 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 Gate To Emitter Voltage : V GE [V] Capacitance [pF] Coes 1 0.01 40 50 15 100 f = 1MHz VGE = 0V Tj = 25ºC 30 Fig.16 Typical Gate Charge Cies 10 20 Gate Resistance : RG [Ω] Collector Current : IC [A] 1000 10 Cres VCC = 300V 10 VCC = 500V 5 IC = 15A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 15 30 45 Gate Charge : QG [nC] 7/9 2020.06 - Rev.A Datasheet RGS30TSX2HR lElectrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance 1 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 0.2 D = 0.5 0.1 Single Pulse 0.01 PDM 0.02 0.01 t1 0.05 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC C1 400.8u 0.001 1E-5 1E-4 1E-3 C2 2.510m C3 12.89m 1E-2 R1 81.52m R2 263.0m 1E-1 R3 215.5m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 8/9 2020.06 - Rev.A Datasheet RGS30TSX2HR ●Inductive Load Switching Circuit and Waveform Gate Drive Time D.U.T. 90% VG VGE 10% Fig.18 Inductive Load Circuit 90% IC td(on) tr ton td(off) 10% tf toff VCE 10% Eon Eoff VCE(sat) Fig.19 Inductive Load Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 9/9 2020.06 - Rev.A