RGS50TSX2DGC11

RGS50TSX2D Datasheet 1200V 25A Field Stop Trench IGBT lOutline VCES 1200V 25A 1.7V 395W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector (3) Emitter *1 (1) 2) Short Circuit Withstand Time 10μs *1 Built in FRD 3) Built in Very Fast & Soft Recovery FRD (3) 4) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication General Inverter UPS Type PV Inverter Power Conditioner Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS50TSX2D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 50 A TC = 100°C IC 25 A ICP*1 75 A TC = 25°C IF 50 A TC = 100°C IF 25 A IFP*1 75 A TC = 25°C PD 395 W TC = 100°C PD 197 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.09 - Rev.C Datasheet RGS50TSX2D lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.38 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.80 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 1200 - - V Tj = 25℃ - - 10 μA Tj = 175℃*2 - 2 - mA VGE = ±30V, VCE = 0V - - ±500 nA 5.0 6.0 7.0 V - 1.70 2.10 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 1200V, VGE= 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 3.8mA IC = 25A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/11 2020.09 - Rev.C Datasheet RGS50TSX2D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2095 - Output Capacitance Coes VGE = 0V - 166 - Reverse transfer Capacitance Cres f = 1MHz - 12 - Total Gate Charge Qg VCE = 500V - 67 - Gate - Emitter Charge Qge IC = 25A - 19 - Gate - Collector Charge Qgc VGE = 15V - 25 - Turn - on Delay Time td(on) - 37 - - 16 - - 140 - - 205 - - 1.40 - - 1.65 - - 36 - - 17 - - 170 - - 280 - - 1.50 - - 2.20 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff IC = 25A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 25A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 75A, VCC = 1050V Reverse Bias Safe Operating Area RBSOA Vp = 1200V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 600V VGE = 15V, Tj = 25°C 10 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 600V VGE = 15V, Tj = 150°C 8 - - μs *2 Design assurance without measurement www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/11 2020.09 - Rev.C Datasheet RGS50TSX2D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.65 2.10 Tj = 175°C - 1.85 - - 182 - ns - 15.7 - A - 1.7 - μC IF = 25A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 422 - μJ Diode Reverse Recovery Time trr - 248 - ns Diode Peak Reverse Recovery Current Irr - 17.8 - A Diode Reverse Recovery Charge Qrr - 2.7 - μC Diode Reverse Recovery Energy Err - 787 - μJ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. IF = 25A VCC = 600V diF/dt = 500A/μs Tj = 25°C IF = 25A VCC = 600V diF/dt = 500A/μs Tj = 175°C 4/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 60 50 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 400 300 200 100 40 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 100 1000 10μs 100 Collector Current : IC [A] Collector Current : IC [A] 25 100μs 10 1 0.1 75 50 25 Tj ≤ 175ºC VGE = 15V TC = 25ºC Single Pulse 0 0.01 1 10 100 1000 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 0 300 600 900 1200 1500 Collector To Emitter Voltage : VCE [V] 5/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 75 75 VGE = 12V Tｊ = 175ºC VGE = 20V Collector Current : IC [A] Collector Current : IC [A] Tｊ = 25ºC VGE = 15V 50 VGE = 10V 25 VGE = 20V VGE = 15V 50 VGE = 12V VGE = 10V 25 VGE = 8V VGE = 8V 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 2 75 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 50 25 Tj = 175ºC 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics Collector Current : IC [A] 1 Collector To Emitter Voltage : VCE [V] Tj = 25ºC 0 IC = 50A 3 IC = 25A 2 IC = 10A 1 0 0 2 4 6 8 10 12 14 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Tj = 175ºC 8 Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 50A IC = 25A 6 IC = 10A 4 2 0 8 IC = 50A IC = 25A 6 IC = 10A 4 2 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] tf Switching Time [ns] Switching Time [ns] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf td(off) td(on) 10 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 10 tr td(off) 100 ｔd(on) tr 10 VCC = 600V, IC = 25A, VGE = 15V, Tj = 175ºC Inductive load VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 1 0 10 20 30 40 50 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 7/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves 10 Fig.14 Typical Switching Energy Losses vs. Gate Resistance 100 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 100 Eon Eoff 1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.1 10 Eon Eoff 1 VCC = 600V, VGE = 15V, IC = 25A, Tj = 175ºC Inductive load 0.1 0 10 20 30 40 50 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 Capacitance [pF] 100 Coes 10 1 0.01 30 40 50 Cres Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies f = 1MHz VGE = 0V Tj = 25ºC 20 Gate Resistance : RG [Ω] Collector Current : IC [A] 1000 10 VCC = 300V 10 VCC = 500V 5 IC = 25A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 15 30 45 60 75 Gate Charge : QG [nQ] 8/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves Fig.18 Typical Diode Reverce Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] Fig.17 Typical Diode Forward Current vs. Forward Voltage 75 50 25 Tj = 175ºC Tj = 25ºC 0 300 Tj = 175ºC 200 Tj = 25ºC 100 VCC = 600V diF/dt = 500A/μs Inductive load 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF [V] 30 40 50 Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current 2 Reverse Recovery Energy Losses : Err [mJ] Reverse Recovery Current : Irr [A] 20 Tj = 175ºC 15 Tj = 25ºC 5 20 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 25 10 10 VCC = 600V diF/dt = 500A/μs Inductive load 0 VCC = 600V Tj = 175℃ Inductive load RG = 10Ω 1.5 1 RG = 30Ω 0.5 RG = 50Ω 0 0 10 20 30 40 50 0 Forward Current : IF [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Forward Current : IF [A] 9/11 2020.09 - Rev.C Datasheet RGS50TSX2D lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 PDM Single Pulse t1 0.01 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.02 0.05 C1 1.184m 0.001 1E-5 1E-4 1E-3 C2 2.063m C3 11.68m R1 63.87m 1E-2 R2 70.00m R3 246.1m 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance 1 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 0.2 D = 0.5 0.1 0.01 Single Pulse PDM 0.02 0.01 t1 0.05 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC C1 165.5u 0.001 1E-5 1E-4 1E-3 C2 1.790m C3 12.54m 1E-2 R1 82.30m R2 387.5m 1E-1 R3 330.2m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10/11 2020.09 - Rev.C Datasheet RGS50TSX2D ●Inductive Load Switching Circuit and Waveform D.U.T. Gate Drive Time D.U.T. 90% VGE VG 10% Fig.23 Inductive Load Circuit 90% IC td(on) tr trr , Qrr IF ton td(off) 10% tf toff VCE diF/dt 10% Irr Eon Fig.24 Diode Reverce Recovery Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.25 Inductive Load Waveform 11/11 2020.09 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001