RGS50TSX2GC11

RGS50TSX2 Datasheet 1200V 25A Field Stop Trench IGBT lOutline VCES 1200V 25A 1.7V 395W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures (1) Gate (2) Collector (3) Emitter 1) Low Collector - Emitter Saturation Voltage (1) 2) Short Circuit Withstand Time 10μs 3) Pb - free Lead Plating ; RoHS Compliant (3) lPackaging Specifications Packaging lApplication PFC UPS Type IH Power Conditioner Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS50TSX2 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 50 A TC = 100°C IC 25 A ICP*1 75 A TC = 25°C PD 395 W TC = 100°C PD 197 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/9 2020.09 - Rev.D Datasheet RGS50TSX2 lThermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 0.38 Unit C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 1200 - - V Tj = 25℃ - - 10 μA Tj = 175℃*2 - 2 - mA VGE = ±30V, VCE = 0V - - ±500 nA 5.0 6.0 7.0 V - 1.70 2.10 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 1200V, VGE = 0V, Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 3.8mA IC = 25A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/9 2020.09 - Rev.D Datasheet RGS50TSX2 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 2095 - Output Capacitance Coes VGE = 0V, - 166 - Reverse transfer Capacitance Cres f = 1MHz - 12 - Total Gate Charge Qg VCE = 500V, - 67 - Gate - Emitter Charge Qge IC = 25A, - 19 - Gate - Collector Charge Qgc VGE = 15V - 25 - Turn - on Delay Time td(on) - 37 - - 16 - - 140 - - 205 - - 1.40 - - 1.65 - - 36 - - 17 - - 170 - - 280 - - 1.50 - - 2.20 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 25A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 25A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 75A, VCC = 1050V, Reverse Bias Safe Operating Area RBSOA VP = 1200V, VGE = 15V, FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 600V, VGE = 15V, Tj = 25°C 10 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 600V, VGE = 15V, Tj = 150°C 8 - - μs *2 Design assurance without measurement www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/9 2020.09 - Rev.D Datasheet RGS50TSX2 lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 60 50 400 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 500 300 200 100 40 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 25 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 100 1000 Collector Current : IC [A] Collector Current : IC [A] 10μs 100 100μs 10 1 0.1 75 50 25 Tj ≤ 175ºC VGE = 15V TC = 25ºC Single Pulse 0 0.01 1 10 100 1000 0 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 400 800 1200 1600 Collector To Emitter Voltage : VCE [V] 4/9 2020.09 - Rev.D Datasheet RGS50TSX2 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 80 80 Tｊ = 25ºC Tｊ = 175ºC 70 VGE = 12V VGE = 20V Collector Current : IC [A] Collector Current : IC [A] 70 60 VGE = 15V 50 40 VGE = 10V 30 20 10 60 VGE = 15V 50 VGE = 12V 40 VGE = 10V 30 20 VGE = 8V 10 VGE = 8V 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 75 VCE = 10V 50 25 Tj = 175ºC Tj = 25ºC 0 0 2 4 6 8 10 12 14 2 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 VGE = 15V IC = 50A 3 IC = 25A 2 IC = 10A 1 0 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 20V 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/9 2020.09 - Rev.D Datasheet RGS50TSX2 Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] lElectrical Characteristic Curves Tj = 25ºC IC = 50A IC = 25A 5 IC = 10A 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Tj = 175ºC IC = 50A IC = 25A 5 IC = 10A 0 20 5 Gate To Emitter Voltage : VGE [V] tf Switching Time [ns] Switching Time [ns] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf td(off) td(on) 10 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 10 tr td(off) 100 td(on) tr 10 VCC = 600V, IC = 25A, VGE = 15V, Tj = 175ºC Inductive load VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 1 0 10 20 30 40 50 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 6/9 2020.09 - Rev.D Datasheet RGS50TSX2 lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 100 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 100 10 Eoff 1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load Eon 0.1 10 Eoff 1 Eon VCC = 600V, IC = 25A, VGE = 15V, Tj = 175ºC Inductive load 0.1 0 10 20 30 40 50 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 40 50 15 Gate To Emitter Voltage : V GE [V] 1000 Capacitance [pF] 30 Fig.16 Typical Gate Charge Cies Coes 100 10 1 0.01 20 Gate Resistance : RG [Ω] Collector Current : IC [A] f = 1MHz VGE = 0V Tj = 25ºC 10 Cres VCE = 300V 10 VCE = 500V 5 IC = 25A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 15 30 45 60 75 Gate Charge : Qg [nQ] 7/9 2020.09 - Rev.D Datasheet RGS50TSX2 lElectrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 0.2 D = 0.5 0.1 0.1 PDM Single Pulse 0.01 0.01 t1 0.02 0.05 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC C1 1.184m 0.001 1E-5 1E-4 1E-3 C2 2.063m 1E-2 C3 11.68m R1 63.87m R2 70.00m 1E-1 R3 246.1m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 8/9 2020.09 - Rev.D Datasheet RGS50TSX2 ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.18 Inductive Load Circuit IC td(on) tr ton td(off) 10% tf toff VCE 10% VCE(sat) Eon Eoff Fig.19 Inductive Load Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 9/9 2020.09 - Rev.D Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001