RGS80TS65HRC11

RGS80TS65HR 650V 40A Field Stop Trench IGBT Datasheet Outline VCES 650V 40A 1.65V 272W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) Inner Circuit (2) Features (1) Gate (2) Collector (3) Emitter 1) Low Collector - Emitter Saturation Voltage (1) 2) Short Circuit Withstand Time 8μs 3) Qualified to AEC-Q101 4) Pb - free Lead Plating ; RoHS Compliant (3) Packaging Specifications Packaging Application Heater for Automotive Type Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS80TS65 Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 73 A TC = 100°C IC 40 A ICP*1 120 A TC = 25°C PD 272 W TC = 100°C PD 136 W Tj -40 to +175 °C Tstg -55 to +175 °C Parameter Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/9 2019.02 - Rev.A Datasheet RGS80TS65HR Thermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 0.55 Unit °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 650 - - V - - 10 μA *2 - - 5 mA VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.65 2.10 V - 2.15 - V BVCES IC = 10μA, VGE = 0V VCE = 650V, VGE = 0V, Collector Cut - off Current ICES Tj = 25℃ Tj = 175℃ Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage IGES VGE(th) VCE = 5V, IC = 2.0mA IC = 40A, VGE = 15V, VCE(sat) Tj = 25°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Tj = 175°C 2/9 2019.02 - Rev.A Datasheet RGS80TS65HR IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 1240 - Output Capacitance Coes VGE = 0V, - 103 - Reverse transfer Capacitance Cres f = 1MHz - 16 - Total Gate Charge Qg VCE = 300V, - 48 - Gate - Emitter Charge Qge IC = 40A, - 12 - Gate - Collector Charge Qgc VGE = 15V - 19 - Turn - on Delay Time td(on) - 37 - - 17 - - 112 - - 96 - - 1.05 - - 1.03 - - 34 - - 28 - - 141 - - 150 - - 1.43 - - 1.47 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Reverse Bias Safe Operating Area IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery pF nC ns mJ ns mJ IC = 120A, VCC = 520V, RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 50Ω, Tj = 175°C tsc Short Circuit Withstand Time Short Circuit Withstand Time IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery Unit tsc *2 VCC ≤ 360V, VGE = 15V, Tj = 25°C 8 - - μs VCC ≤ 360V, VGE = 15V, Tj = 150°C 6 - - μs *2 Design assurance without measurement www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/9 2019.02 - Rev.A Datasheet RGS80TS65HR Electrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 80 250 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 300 200 150 100 50 0 0 25 50 60 40 20 0 75 100 125 150 175 Tj ≤ 175ºC VGE ≥ 15V 0 Fig.3 Forward Bias Safe Operating Area 75 100 125 150 175 Fig.4 Reverse Bias Safe Operating Area 140 1000 120 10μs 100 10 Collector Current : IC [A] Collector Current : IC [A] 50 Case Temperature : TC [°C ] Case Temperature : TC [°C ] 100μs 1 0.1 0.01 25 10 80 60 40 20 TC = 25ºC Single Pulse 1 100 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Tj ≤ 175ºC VGE = 15V 0 200 400 600 800 Collector To Emitter Voltage : VCE [V] 4/9 2019.02 - Rev.A Datasheet RGS80TS65HR Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 VGE = 15V Tｊ = 25ºC 100 VGE = 20V 80 Collector Current : IC [A] Collector Current : IC [A] Electrical Characteristic Curves VGE = 12V 60 VGE = 10V 40 20 0 VGE = 8V 0 1 2 3 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector Current : IC [A] 50 40 30 20 Tj = 175ºC 10 0 0 2 4 6 Tj = 25ºC 8 10 12 14 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. VGE = 12V 60 VGE = 10V 40 VGE = 8V 20 0 1 2 3 4 5 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics VCE = 10V VGE = 15V 80 Collector To Emitter Voltage : VCE [V] 60 VGE = 20V 100 0 5 Tｊ = 175ºC Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 IC = 80A VGE = 15V 3 IC = 40A 2 IC = 20A 1 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/9 2019.02 - Rev.A Datasheet RGS80TS65HR Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Electrical Characteristic Curves Tj = 25ºC 15 IC = 80A IC = 40A 10 IC = 20A 5 0 5 10 15 20 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj = 175ºC 15 IC = 80A IC = 40A 10 IC = 20A 5 0 5 Fig.11 Typical Switching Time vs. Collector Current 1000 Switching Time [ns] Switching Time [ns] tf td(off) td(on) 1 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf 10 15 Gate To Emitter Voltage : VGE [V] Gate To Emitter Voltage : VGE [V] 100 10 Collecter Current : IC [A] td(off) td(on) tr 10 1 10 20 30 40 50 60 70 80 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 100 VCC = 400V, IC = 40A, VGE = 15V, Tj = 175ºC Inductive load 0 10 20 30 40 50 Gate Resistance : RG [Ω] 6/9 2019.02 - Rev.A Datasheet RGS80TS65HR Electrical Characteristic Curves 1 Eoff 0.1 Eon 0.01 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0 Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 Eon 1 0.1 0.01 10 20 30 40 50 60 70 80 Eoff VCC = 400V, IC = 40A, VGE = 15V, Tj = 175ºC Inductive load 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 Coes 100 10 1 0.01 Cres f = 1MHz VGE = 0V Tj = 25ºC 0.1 1 10 15 40 50 100 VCE = 200V VCE = 300V 10 VCE = 400V 5 IC = 40A Tj = 25ºC 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 30 Fig.16 Typical Gate Charge Gate To Emitter Voltage : V GE [V] Capacitance [pF] 1000 20 Gate Resistance : RG [Ω] Collector Current : IC [A] Cies 10 0 10 20 30 40 50 Gate Charge : Qg [nQ] 7/9 2019.02 - Rev.A Datasheet RGS80TS65HR Electrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 10 1 0.1 0.2 D = 0.5 PDM 0.1 0.01 0.05 0.01 0.0001 t1 Single Pulse 0.02 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC C1 C2 C3 R1 R2 R3 3.282m 29.92m 78.57m 402.0m 134.1m 13.88m 0.001 0.01 0.1 1 Pulse Width : t1 [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 8/9 2019.02 - Rev.A Datasheet RGS80TS65HR ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.18 Inductive Load Circuit IC td(on) tr ton td(off) 10% tf toff VCE 10% VCE(sat) Eon Eoff Fig.19 Inductive Load Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 9/9 2019.02 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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