RGS80TSX2
Datasheet
1200V 40A Field Stop Trench IGBT
lOutline
VCES
1200V
40A
1.7V
555W
IC (100°C)
VCE(sat) (Typ.)
PD
TO-247N
(1) (2)(3)
lInner Circuit
(2)
lFeatures
(1) Gate
(2) Collector
(3) Emitter
1) Low Collector - Emitter Saturation Voltage
(1)
2) Short Circuit Withstand Time 10μs
3) Pb - free Lead Plating ; RoHS Compliant
(3)
lPackaging Specifications
Packaging
lApplication
Tube
Reel Size (mm)
-
Tape Width (mm)
-
PFC
UPS
Type
IH
Power Conditioner
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGS80TSX2
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
1200
V
Gate - Emitter Voltage
VGES
±30
V
TC = 25°C
IC
80
A
TC = 100°C
IC
40
A
ICP*1
120
A
TC = 25°C
PD
555
W
TC = 100°C
PD
277
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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1/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lThermal Resistance
Values
Parameter
Symbol
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Unit
Min.
Typ.
Max.
-
-
0.27
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
1200
-
-
V
Tj = 25℃
-
-
10
μA
Tj = 175℃*2
-
3
-
mA
VGE = ±30V, VCE = 0V
-
-
±500
nA
5.0
6.0
7.0
V
-
1.70
2.10
V
-
2.20
-
V
BVCES IC = 10μA, VGE = 0V
VCE = 1200V, VGE = 0V,
Collector Cut - off Current
Gate - Emitter Leakage
Current
Gate - Emitter Threshold
Voltage
ICES
IGES
VGE(th) VCE = 5V, IC = 6.1mA
IC = 40A, VGE = 15V,
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 175°C
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2/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V,
-
2820
-
Output Capacitance
Coes
VGE = 0V,
-
161
-
Reverse transfer Capacitance
Cres
f = 1MHz
-
25
-
Total Gate Charge
Qg
VCE = 500V,
-
104
-
Gate - Emitter Charge
Qge
IC = 40A,
-
25
-
Gate - Collector Charge
Qgc
VGE = 15V
-
42
-
Turn - on Delay Time
td(on)
-
49
-
-
27
-
-
199
-
-
227
-
-
3.00
-
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
Eon
Turn - off Switching Loss
Eoff
-
3.10
-
Turn - on Delay Time
td(on)
-
49
-
-
40
-
-
258
-
-
371
-
-
3.80
-
-
4.50
-
tr
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
IC = 40A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
nC
ns
Turn - on Switching Loss
Rise Time
pF
mJ
ns
mJ
IC = 120A, VCC = 1050V,
Reverse Bias
Safe Operating Area
RBSOA VP = 1200V, VGE = 15V,
FULL SQUARE
-
RG = 50Ω, Tj = 175°C
Short Circuit Withstand Time
tsc
VCC ≤ 600V,
VGE = 15V, Tj = 25°C
10
-
-
μs
Short Circuit Withstand Time
tsc*2
VCC ≤ 600V,
VGE = 15V, Tj = 150°C
8
-
-
μs
*2 Design assurance without measurement
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3/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lElectrical Characteristic Curves
Fig.2 Collector Current
vs. Case Temperature
100
500
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation
vs. Case Temperature
600
400
300
200
100
80
60
40
20
Tj ≤ 175ºC
VGE ≥ 15V
0
0
0
25
50
0
75 100 125 150 175
Case Temperature : TC [°C ]
50
75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
140
1000
10μs
120
100
10
Collector Current : IC [A]
Collector Current : IC [A]
25
100μs
1
0.1
100
80
60
40
20
TC = 25ºC
Single Pulse
Tj ≤ 175ºC
VGE = 15V
0
0.01
1
10
100
1000
0
10000
Collector To Emitter Voltage : VCE [V]
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400
800
1200
1600
Collector To Emitter Voltage : VCE [V]
4/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
80
Fig.6 Typical Output Characteristics
80
VGE = 15V
Tj = 25ºC
Tj = 175ºC
70
VGE = 20V
VGE = 12V
60
Collector Current : IC [A]
Collector Current : IC [A]
70
50
VGE = 10V
40
30
20
VGE = 8V
10
60
VGE = 15V
VGE = 12V
50
40
VGE = 10V
30
VGE = 8V
20
10
0
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
VCE = 10V
60
50
40
30
20
Tj = 175ºC
10
2
3
4
5
Fig.8 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
4
80
70
1
Collector To Emitter Voltage : VCE [V]
Fig.7 Typical Transfer Characteristics
Collector Current : IC [A]
VGE = 20V
Tj = 25ºC
0
IC = 80A
VGE = 15V
3
IC = 40A
2
IC = 20A
1
0
0
2
4
6
8
10
12
14
25
Gate To Emitter Voltage : VGE [V]
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50
75
100 125 150 175
Junction Temperature : Tj [°C ]
5/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lElectrical Characteristic Curves
Tj = 25ºC
IC = 80A
IC = 40A
5
IC = 20A
0
5
10
15
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10
Tj = 175ºC
IC = 80A
IC = 40A
5
IC = 20A
0
20
5
Gate To Emitter Voltage : VGE [V]
20
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
tf
tf
td(off)
td(off)
Switching Time [ns]
Switching Time [ns]
15
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
100
td(on)
10
10
tr
100
td(on)
tr
10
VCC = 600V, IC = 40A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
1
1
0
0
10 20 30 40 50 60 70 80
20
30
40
50
Gate Resistance : RG [Ω]
Collecter Current : IC [A]
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10
6/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lElectrical Characteristic Curves
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
100
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
Fig.13 Typical Switching Energy Losses
vs. Collector Current
100
10
Eoff
1
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
Eon
0.1
10
Eoff
Eon
1
VCC = 600V, IC = 40A,
VGE = 15V, Tj = 175ºC
Inductive load
0.1
0
10 20 30 40 50 60 70 80
0
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
40
50
15
Gate To Emitter Voltage : V GE [V]
1000
Capacitance [pF]
30
Fig.16 Typical Gate Charge
Cies
Coes
100
10
1
0.01
20
Gate Resistance : RG [Ω]
Collector Current : IC [A]
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
10
VCE = 300V
10
VCE = 500V
5
IC = 40A
Tj = 25ºC
0
0.1
1
10
100
0
Collector To Emitter Voltage : VCE [V]
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30
60
90
120
Gate Charge : Qg [nQ]
7/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: Zθ(j-c) [°C/W]
1
D = 0.5
0.1
0.2
0.1
PDM
Single Pulse
0.01
t1
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.05
0.001
1E-5
C1
1.939m
1E-4
1E-3
C2
3.166m
1E-2
C3
R1
R2
R3
20.576m 43.129m 53.597m 173.284m
1E-1
1E+0
Pulse Width : t1 [s]
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8/9
2020.06 - Rev.B
Datasheet
RGS80TSX2
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
Fig.18 Inductive Load Circuit
IC
td(on)
tr
ton
td(off)
10%
tf
toff
VCE
10%
VCE(sat)
Eon
Eoff
Fig.19 Inductive Load Waveform
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9/9
2020.06 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1107 B