RGT00TS65DGC11

RGT00TS65D Datasheet 650V 50A Field Stop Trench IGBT Outline VCES 650V IC(100°C) 50A VCE(sat) (Typ.) 1.65V PD 277W Features TO-247N (1)(2)(3) Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Low Switching Loss (1) Gate (2) Collector (3) Emitter *1 3) Short Circuit Withstand Time 5μs (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Applications Packaging General Inverter Reel Size (mm) - Tape Width (mm) - UPS Type Power Conditioner Welder Tube Basic Ordering Unit (pcs) 450 Packing code C11 Marking RGT00TS65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 85 A TC = 100°C IC 50 A 150 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 50 A TC = 100°C IF 30 A 150 A Diode Pulsed Forward Current Power Dissipation *1 IFP *1 TC = 25°C PD 277 W TC = 100°C PD 138 W Tj 40 to +175 °C Tstg 55 to +175 °C Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 2015.10 - Rev.C Data Sheet RGT00TS65D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.54 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.42 °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 34.7mA 5.0 6.0 7.0 V Tj = 25°C - 1.65 2.1 V Tj = 175°C - 2.2 - Gate - Emitter Threshold Voltage IC = 50A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2015.10 - Rev.C Data Sheet RGT00TS65D IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2770 - Output Capacitance Coes VGE = 0V - 106 - Reverse Transfer Capacitance Cres f = 1MHz - 43 - Total Gate Charge Qg VCE = 300V - 94 - Gate - Emitter Charge Qge IC = 50A - 22 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 42 - tr VGE = 15V, RG = 10Ω - 68 - Tj = 25°C - 137 - Inductive Load - 62 - td(on) IC = 50A, VCC = 400V - 42 - tr VGE = 15V, RG = 10Ω - 68 - Tj = 175°C - 149 - Inductive Load - 76 - Rise Time Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time td(off) tf td(off) tf Unit pF nC ns ns IC = 150A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C VCC ≦ 360V Short Circuit Withstand Time tsc VGE = 15V 5 - - μs Tj = 25°C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/11 2015.10 - Rev.C Data Sheet RGT00TS65D FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 2.0 Tj = 175°C - 1.25 - - 54 - ns - 7.4 - A - 0.22 - μC - 225 - ns - 12.8 - A - 1.60 - μC IF = 30A Diode Forward Voltage VF Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 V 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Fig.2 Collector Current vs. Case Temperature 90 80 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 60 50 40 30 　20 Tj≦175ºC VGE≧15V 10 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 180 1000 10µs 100 10 100µs 1 0.1 160 Collector Current : IC [A] Collector Current : IC [A] 70 TC= 25ºC Single Pulse 140 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 150 150 Tj= 25ºC VGE= 20V 120 105 Tj= 175ºC 135 Collector Current : IC [A] Collector Current : IC [A] 135 VGE= 12V VGE= 15V 90 VGE= 10V 75 60 45 VGE= 8V 30 VGE= 15V 120 105 VGE= 12V 90 75 VGE= 10V 60 45 VGE= 8V 30 15 15 0 0 0 1 2 3 4 0 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 1 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 60 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] VGE= 20V 40 30 20 Tj= 175ºC Tj= 25ºC 10 0 0 2 4 6 8 10 12 IC= 100A 3 IC= 50A 2 IC= 25A 1 0 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC IC= 100A 15 IC= 50A 10 IC= 25A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC 15 IC= 100A 10 IC= 50A IC= 25A 5 0 5 20 10 Gate To Emitter Voltage : VGE [V] 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current Fig.12 Typical Switching Time vs. Gate Resistance 1000 1000 Switching Time [ns] Switching Time [ns] 15 tf td(off) 100 td(on) tr td(off) 100 tf tr td(on) VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad 10 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 10 0 10 20 30 40 50 60 70 80 90 100 0 Collector Current : IC [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 1 Eon 0.1 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 0 10 20 30 40 50 60 70 80 90 100 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 10 10 5 VCC=300V IC=50A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 90 100 Gate Charge : Qg [nC] 8/11 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 150 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 135 120 105 90 75 60 45 Tj= 175ºC 30 Tj= 25ºC 15 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 300 Tj= 175ºC 200 100 Tj= 25ºC 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 0 10 20 30 40 2 Tj= 175ºC 1.5 1 0.5 Tj= 25ºC 0 50 0 Forward Current : IF [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VCC=400V diF/dt=200A/µs Inductive ｌoad 10 20 30 40 50 Forward Current : IF [A] 9/11 2015.10 - Rev.C Data Sheet RGT00TS65D Electrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 1 0.1 0.2 PDM 0.1 t1 0.05 0.02 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.2 1 0.1 PDM 0.1 0.05 0.01 0.0001 0.02 Single Pulse 0.01 t1 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 0.001 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/11 2015.10 - Rev.C Data Sheet RGT00TS65D Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt VCE(sat) Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Fig.24 Inductive Load Waveform 11/11 2015.10 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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