RGT20NL65GTL

RGT20NL65 Datasheet 650V 10A Field Stop Trench IGBT lOutline VCES 650V 10A 1.65V 106W IC (100°C) VCE(sat) (Typ.) PD lFeatures LPDL (TO-263L) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications General Inverter Packaging UPS Reel Size (mm) 330 Tape Width (mm) 24 Power Conditioner Type Welder Taping Basic Ordering Unit (pcs) 1,000 Packing Code TL Marking RGT20NL65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 20 A TC = 100°C IC 10 A 30 A Collector Current Pulsed Collector Current Power Dissipation ICP *1 TC = 25°C PD 106 W TC = 100°C PD 53 W Tj -40 to +175 °C Tstg -55 to +175 °C Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/9 2019.04 - Rev.A Datasheet RGT20NL65 lThermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 1.41 Unit C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.65 2.1 V - 2.15 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 6.7mA IC = 10A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/9 2019.04 - Rev.A Datasheet RGT20NL65 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 610 - Output Capacitance Coes VGE = 0V, - 25 - Reverse transfer Capacitance Cres f = 1MHz - 9 - Total Gate Charge Qg VCE = 300V, - 22 - Gate - Emitter Charge Qge IC = 10A, - 6 - Gate - Collector Charge Qgc VGE = 15V - 9 - Turn - on Delay Time td(on) - 12 - - 18 - - 32 - - 104 - - 13 - - 18 - - 34 - - 140 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time IC = 10A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load IC = 10A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load Unit pF nC ns ns IC = 30A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 50Ω, Tj = 175℃ VCC ≦ 360V, Short Circuit Withstand Time tsc VGE = 15V, 5 - - μs Tj = 25℃ www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/9 2019.04 - Rev.A Datasheet RGT20NL65 lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 25 120 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 140 100 80 60 40 20 15 10 5 20 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 25 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 35 1000 Collector Current : IC [A] Collector Current : IC [A] 30 100 10μs 10 100μs 1 0.1 25 20 15 10 5 TC = 25ºC Single Pulse Tj ≤ 175ºC VGE = 15V 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 4/9 2019.04 - Rev.A Datasheet RGT20NL65 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 30 30 Tｊ = 25ºC VGE = 20V 20 Collector Current : IC [A] Collector Current : IC [A] 25 Tｊ = 175ºC VGE = 12V VGE = 15V 15 10 VGE = 10V 5 25 VGE = 20V 20 VGE = 15V VGE = 12V 15 10 VGE = 10V 5 VGE = 8V 0 VGE = 8V 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 20 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector Current : IC [A] VCE = 10V 15 10 5 Tj = 175ºC Tj = 25ºC 4 6 8 10 4 5 IC = 20A 3 IC = 10A 2 IC = 5A 1 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3 0 0 2 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 0 1 Collector To Emitter Voltage : VCE [V] 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/9 2019.04 - Rev.A Datasheet RGT20NL65 lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 20A 15 IC = 10A IC = 5A 10 5 0 IC = 20A 15 IC = 10A IC = 5A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] tf Switching Time [ns] 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 td(off) tr 10 10 td(on) tf 100 td(off) tr 10 td(on) VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, IC = 10A, VGE = 15V, Tj = 175ºC Inductive load 1 1 0 5 10 15 20 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10 6/9 2019.04 - Rev.A Datasheet RGT20NL65 lElectrical Characteristic Curves Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 1 Eoff Eon 0.1 VCC = 400V, IC = 10A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0 5 10 15 20 0 Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 10000 Gate To Emitter Voltage : V GE [V] Capacitance [pF] 40 50 15 100 Coes 10 1 0.01 30 Fig.16 Typical Gate Charge Cies f = 1MHz VGE = 0V Tj = 25ºC 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 1000 10 Cres 10 5 VCC = 300V IC = 10A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 5 10 15 20 25 Gate Charge : Qg [nC] 7/9 2019.04 - Rev.A Datasheet RGT20NL65 lElectrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 10 0.1 0.2 D = 0.5 1 0.02 0.1 0.01 Single Pulse PDM t1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.05 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width : t1 [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 8/9 2019.04 - Rev.A Datasheet RGT20NL65 ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.18 Inductive Load Circuit IC 10% tr td(on) ton tf td(off) toff VCE VCE(sat) Fig.19 Inductive Load Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 9/9 2019.04 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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