RGT40NS65D
Data Sheet
650V 20A Field Stop Trench IGBT
lOutline
VCES
650V
IC(100°C)
20A
VCE(sat) (Typ.)
1.65V
PD
161W
lFeatures
LPDS / TO-262
(2)
(1)
(3)
(1)(2)(3)
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) Low Switching Loss
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
*1 Built in FRD
(3)
(RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
lApplications
Packaging
General Inverter
Reel Size (mm)
330 / -
Tape Width (mm)
24 / -
UPS
Taping / Tube
Type
Power Conditioner
Basic Ordering Unit (pcs) 1,000 / 1,000
Welder
Packing code
TL / C9
Marking
RGT40NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
40
A
TC = 100°C
IC
20
A
ICP*1
60
A
TC = 25°C
IF
35
A
TC = 100°C
IF
20
A
IFP*1
60
A
TC = 25°C
PD
161
W
TC = 100°C
PD
70
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.93
°C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
2.12
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 13.3mA
5.0
6.0
7.0
V
Tj = 25°C
-
1.65
2.1
V
Tj = 175°C
-
2.15
-
Gate - Emitter Threshold
Voltage
IC = 20A, VGE = 15V
Collector - Emitter Saturation
Voltage
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VCE(sat)
2/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
1070
-
Output Capacitance
Coes
VGE = 0V
-
45
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
18
-
Total Gate Charge
Qg
VCE = 300V
-
40
-
Gate - Emitter Charge
Qge
IC = 20A
-
9
-
Gate - Collector Charge
Qgc
VGE = 15V
-
15
-
Turn - on Delay Time
td(on)
IC = 20A, VCC = 400V
-
22
-
tr
VGE = 15V, RG = 10Ω
-
27
-
Tj = 25°C
-
75
-
Inductive Load
-
60
-
td(on)
IC = 20A, VCC = 400V
-
22
-
tr
VGE = 15V, RG = 10Ω
-
29
-
Tj = 175°C
-
84
-
Inductive Load
-
120
-
Rise Time
pF
nC
ns
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
td(off)
tf
ns
Turn - off Delay Time
Fall Time
td(off)
tf
IC = 60A, VCC = 520V
Reverse Bias Safe Operating Area
RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
RG = 50Ω, Tj = 175°C
VCC ≦ 360V
Short Circuit Withstand Time
tsc
VGE = 15V
5
-
-
μs
Tj = 25°C
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3/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Tj = 25°C
-
1.45
1.9
Tj = 175°C
-
1.25
-
-
58
-
ns
-
6.3
-
A
-
0.20
-
μC
-
256
-
ns
-
10.4
-
A
-
1.35
-
μC
IF = 20A
Diode Forward Voltage
Diode Reverse Recovery Time
VF
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
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V
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
4/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
180
50
140
Collector Current : IC [A]
Power Dissipation : PD [W]
160
120
100
80
60
40
40
30
20
10
Tj≦175ºC
VGE≧15V
20
0
0
0
25
50
75
100
125
150
175
0
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
80
1000
10µs
100
Collector Current : IC [A]
Collector Current : IC [A]
25
10
100µs
1
0.1
60
40
20
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
0.01
0
1
10
100
1000
0
Collector To Emitter Voltage : VCE[V]
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200
400
600
800
Collector To Emitter Voltage : VCE[V]
5/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
60
60
Tj= 25ºC
Tj= 175ºC
VGE= 20V
Collector Current : IC [A]
Collector Current : IC [A]
VGE= 20V
45
VGE= 12V
VGE= 15V
VGE= 10V
30
15
VGE= 8V
0
VGE= 15V
45
VGE= 12V
30
VGE= 10V
VGE= 8V
15
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
40
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
VCE= 10V
Collector Current : IC [A]
1
30
20
10
Tj= 175ºC
Tj= 25ºC
0
0
2
4
6
8
10
IC= 40A
3
IC= 20A
2
IC= 10A
1
0
25
12
Gate To Emitter Voltage : VGE [V]
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VGE= 15V
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
6/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
20
Tj= 25ºC
IC= 40A
15
10
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
IC= 20A
IC= 10A
5
0
5
10
15
20
Tj= 175ºC
15
IC= 40A
10
IC= 20A
IC= 10A
5
0
5
20
10
Gate To Emitter Voltage : VGE [V]
15
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.11 Typical Switching Time
vs. Collector Current
1000
1000
VCC=400V, IC=20A
VGE=15V, Tj=175ºC
Inductive load
Switching Time [ns]
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
Switching Time [ns]
20
tf
100
td(off)
tf
100
td(off)
tr
td(on)
td(on)
tr
10
10
0
10
20
30
40
0
Collector Current : IC [A]
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10
20
30
40
50
Gate Resistance : RG [Ω]
7/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
10
1
Eoff
Eon
0.1
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0.01
1
Eoff
Eon
0.1
VCC=400V, IC=20A
VGE=15V, Tj=175ºC
Inductive load
0.01
0
10
20
30
40
0
Collector Current : IC [A]
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
Cies
1000
100
Coes
10
Cres
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
Gate To Emitter Voltage : VGE [V]
10000
Capacitance [pF]
10
10
5
VCC=300V
IC=20A
Tj=25ºC
0
0.1
1
10
0
100
Collector To Emitter Voltage : VCE[V]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
20
30
40
Gate Charge : Qg [nC]
8/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
400
Reverse Recovery Time : trr [ns]
Forward Current : IF [A]
60
45
30
15
Tj= 175ºC
Tj= 25ºC
VCC=400V
diF/dt=200A/µs
Inductive load
300
Tj= 175ºC
200
100
Tj= 25ºC
0
0
0
0.5
1
1.5
2
2.5
0
3
Forward Voltage : VF[V]
20
30
40
50
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
20
2.5
Reverse Recovery Charge : Qrr [µC]
Reverse Recovery Current : Irr [A]
10
15
Tj= 175ºC
10
5
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
0
VCC=400V
diF/dt=200A/µs
Inductive load
2
1.5
Tj= 175ºC
1
0.5
Tj= 25ºC
0
0
10
20
30
40
50
0
Forward Current : IF [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Forward Current : IF [A]
9/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
D= 0.5
1
0.2
0.1
PDM
0.1
0.05
0.02 0.01
0.01
0.0001
t1
Single Pulse
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.001
0.01
0.1
1
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
10
Transient Thermal Impedance
: ZthJC [ºC/W]
D= 0.5
0.2
0.1
1
0.05
0.01
0.0001
PDM
Single Pulse
0.1
0.02
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.001
0.01
0.1
1
Pulse Width : t1[s]
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© 2015 ROHM Co., Ltd. All rights reserved.
10/11
2015.11 - Rev.C
Data Sheet
RGT40NS65D
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
IC
10%
Fig.23 Inductive Load Circuit
td(on)
tr
ton
IF
td(off)
tf
toff
trr , Qrr
VCE
diF/dt
VCE(sat)
Irr
Fig.25 Diode Reverce Recovery Waveform
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Fig.24 Inductive Load Waveform
11/11
2015.11 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A