RGT80TS65DGC13

RGT80TS65DGC13 Datasheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 40A VCE(sat) (Typ.) 1.65V PD 234W lFeatures TO-247GE (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss *1 3) Short Circuit Withstand Time 5μs (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging General Inverter Reel Size (mm) - Tape Width (mm) - UPS Tube Type Power Conditioner Basic Ordering Unit (pcs) 600 Welder Packing code C13 Marking RGT80TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 70 A TC = 100°C IC 40 A ICP*1 120 A TC = 25°C IF 40 A TC = 100°C IF 20 A IFP*1 120 A TC = 25°C PD 234 W TC = 100°C PD 117 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.64 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.00 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 27.6mA 5.0 6.0 7.0 V Tj = 25°C - 1.65 2.1 V Tj = 175°C - 2.15 - Gate - Emitter Threshold Voltage IC = 40A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2210 - Output Capacitance Coes VGE = 0V - 87 - Reverse Transfer Capacitance Cres f = 1MHz - 36 - Total Gate Charge Qg VCE = 300V - 79 - Gate - Emitter Charge Qge IC = 40A - 21 - Gate - Collector Charge Qgc VGE = 15V - 29 - Turn - on Delay Time td(on) IC = 40A, VCC = 400V - 34 - tr VGE = 15V, RG = 10Ω - 56 - Tj = 25°C - 119 - Inductive Load - 55 - td(on) IC = 40A, VCC = 400V - 34 - tr VGE = 15V, RG = 10Ω - 56 - Tj = 175°C - 131 - Inductive Load - 75 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 120A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C VCC ≦ 360V Short Circuit Withstand Time tsc VGE = 15V 5 - - μs Tj = 25°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.35 1.8 Tj = 175°C - 1.15 - - 58 - ns - 6.5 - A - 0.21 - μC - 236 - ns - 10.7 - A - 1.36 - μC IF = 20A Diode Forward Voltage Diode Reverse Recovery Time VF trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. V IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 260 80 240 70 200 Collector Current : IC [A] Power Dissipation : PD [W] 220 180 160 140 120 100 80 60 40 50 40 30 20 　 Tj≦175ºC VGE≧15V 10 20 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 10µs 140 100 Collector Current : IC [A] Collector Current : IC [A] 60 10 100µs 1 0.1 TC= 25ºC Single Pulse 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tj= 25ºC Tj= 175ºC VGE= 20V 90 VGE= 12V VGE= 15V 75 VGE= 10V 60 45 30 VGE= 8V 15 VGE= 15V 90 VGE= 12V 75 60 VGE= 10V 45 VGE= 8V 30 15 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 1 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 60 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] VGE= 20V 105 Collector Current : IC [A] Collector Current : IC [A] 105 40 30 20 Tj= 175ºC Tj= 25ºC 10 0 0 2 4 6 8 10 12 IC= 80A 3 IC= 40A 2 IC= 20A 1 0 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 80A IC= 40A 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage IC= 20A 5 0 5 10 15 20 Tj= 175ºC 15 IC= 80A IC= 40A 10 IC= 20A 5 0 5 20 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current Fig.12 Typical Switching Time vs. Gate Resistance 1000 1000 Switching Time [ns] Switching Time [ns] 10 tf td(off) 100 td(on) tf 100 td(off) tr VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad tr td(on) 10 VCC=400V, IC=40A VGE=15V, Tj=175ºC Inductive ｌoad 10 0 10 20 30 40 50 60 70 80 0 Collector Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 1 Fig.1 6 Typic al Gate Char ge Eoff Eon 0.1 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad 0.01 Eoff 1 Eon 0.1 VCC=400V, IC=40A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0 10 20 30 40 50 60 70 80 0 10 Collector Current : IC [A] 30 40 50 Gate Resistance : RG [Ω] Fig.16 Typical Gate Charge Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 20 10 5 VCC=300V IC=40A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 Gate Charge : Qg [nC] 8/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 120 Reverse Recovery Time : trr [ns] 400 Forward Current : IF [A] 105 90 75 60 45 30 Tj= 175ºC Tj= 25ºC 15 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 300 Tj= 175ºC 200 100 Tj= 25ºC 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 Tj= 175ºC 1.5 1 0.5 Tj= 25ºC 0 0 10 20 30 40 50 0 Forward Current : IF [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Forward Current : IF [A] 9/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.2 1 0.1 PDM 0.1 t1 0.01 0.05 0.02 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance 10 Transient Thermal Impedance : ZthJC [ºC/W] D= 0.5 0.2 0.1 1 PDM 0.1 Single Pulse 0.05 0.01 0.0001 0.02 t1 0.01 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.001 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10/11 2021.02 - Rev.A Datasheet RGT80TS65DGC13 lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% IC 10% Fig.23 Inductive Load Circuit td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt VCE(sat) Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. Fig.24 Inductive Load Waveform 11/11 2021.02 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001