RGTH00TS65GC13

RGTH00TS65GC13 Datasheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 50A VCE(sat) (Typ.) 1.6V PD 277W TO-247GE (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplications lPackaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Power Conditioner Tube Type IH Basic Ordering Unit (pcs) 600 Packing code C13 Marking RGTH00TS65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 85 A TC = 100°C IC 50 A ICP*1 200 A TC = 25°C PD 277 W TC = 100°C PD 138 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. 1/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lThermal Resistance Values Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Unit Min. Typ. Max. - - 0.54 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 34.7mA 4.5 5.5 6.5 V Tj = 25°C - 1.6 2.1 V Tj = 175°C - 2.1 - Gate - Emitter Threshold Voltage IC = 50A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) 2/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2740 - Output Capacitance Coes VGE = 0V - 106 - Reverse Transfer Capacitance Cres f = 1MHz - 43 - Total Gate Charge Qg VCE = 300V - 94 - Gate - Emitter Charge Qge IC = 50A - 22 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 39 - tr VGE = 15V, RG = 10Ω - 63 - Tj = 25°C - 143 - Inductive Load - 50 - td(on) IC = 50A, VCC = 400V - 39 - tr VGE = 15V, RG = 10Ω - 63 - Tj = 175°C - 159 - Inductive Load - 62 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 200A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 60Ω, Tj = 175°C 3/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 90 80 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 60 50 40 30 　20 Tj≦175ºC VGE≧15V 10 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 1000 240 220 10µs 200 100 10 Collector Current : IC [A] Collector Current : IC [A] 70 100µs 1 0.1 180 160 140 120 100 80 60 40 TC= 25ºC Single Pulse Tj≦175ºC VGE=15V 20 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] 200 400 600 800 Collector To Emitter Voltage : VCE[V] 4/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 200 200 Tj= 25ºC VGE= 20V 160 VGE= 15V 140 120 Tj= 175ºC 180 Collector Current : IC [A] Collector Current : IC [A] 180 VGE= 12V VGE= 10V 100 80 VGE= 8V 60 40 VGE= 20V 160 140 VGE= 15V VGE= 12V 120 100 80 VGE= 10V 60 40 VGE= 8V 20 20 0 0 0 1 2 3 4 0 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 60 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] 1 40 30 20 Tj= 175ºC Tj= 25ºC 10 0 0 2 4 6 8 10 VGE= 15V IC= 100A 3 IC= 50A 2 IC= 25A 1 0 25 12 Gate To Emitter Voltage : VGE [V] 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 5/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 100A IC= 50A 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage IC= 25A 5 0 5 10 15 20 Tj= 175ºC IC= 100A 15 IC= 50A 10 IC= 25A 5 0 5 20 10 Gate To Emitter Voltage : VGE [V] 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] 15 td(off) tf 100 td(on) tr td(off) 100 tf tr td(on) VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad 10 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 10 0 10 20 30 40 50 60 70 80 90 100 0 Collector Current : IC [A] 10 20 30 40 50 Gate Resistance : RG [Ω] 6/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 0.01 Eoff 1 Eon 0.1 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0 10 20 30 40 50 60 70 80 90 100 0 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 10000 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 15 Cies Capacitance [pF] 10 10 5 VCC=300V IC=50A Tj=25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE[V] 10 20 30 40 50 60 70 80 90 100 Gate Charge : Qg [nC] 7/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lElectrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 1 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.0001 0.02 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.01 Single Pulse 0.001 0.01 0.1 1 Pulse Width : t1[s] 8/9 2019.08 - Rev.A Datasheet RGTH00TS65GC13 lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% IC 10% Fig.18 Inductive Load Circuit td(on) tr ton td(off) tf toff VCE VCE(sat) Fig.19 Inductive Load Waveform 9/9 2019.08 - Rev.A