RGTH50TS65DGC13

RGTH50TS65DGC13 Datasheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 25A VCE(sat) (Typ.) 1.6V PD 174W lFeatures TO-247GE (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching (1) Gate (2) Collector (3) Emitter *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (RFN - Series) (3) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging PFC Reel Size (mm) - Tape Width (mm) - UPS Type Power Conditioner IH Tube Basic Ordering Unit (pcs) 600 Packing code C13 Marking RGTH50TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 50 A TC = 100°C IC 25 A ICP*1 100 A TC = 25°C IF 35 A TC = 100°C IF 20 A IFP*1 100 A TC = 25°C PD 174 W TC = 100°C PD 87 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.86 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.28 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 17.5mA 4.5 5.5 6.5 V Tj = 25°C - 1.6 2.1 V Tj = 175°C - 2.1 - Gate - Emitter Threshold Voltage IC = 25A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1410 - Output Capacitance Coes VGE = 0V - 57 - Reverse Transfer Capacitance Cres f = 1MHz - 22 - Total Gate Charge Qg VCE = 300V - 49 - Gate - Emitter Charge Qge IC = 25A - 15 - Gate - Collector Charge Qgc VGE = 15V - 19 - Turn - on Delay Time td(on) IC = 25A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 38 - Tj = 25°C - 94 - Inductive Load - 50 - td(on) IC = 25A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 38 - Tj = 175°C - 107 - Inductive Load - 65 - Rise Time Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time td(off) tf td(off) tf Unit pF nC ns ns IC = 100A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 60Ω, Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.25 - - 58 - ns - 6.3 - A - 0.20 - μC - 256 - ns - 10.4 - A - 1.35 - μC IF = 20A Diode Forward Voltage VF Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 V 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 200 60 50 160 Collector Current : IC [A] Power Dissipation : PD [W] 180 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 30 20 　10 0 175 Tj≦175ºC VGE≧15V 0 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 1000 140 10µs 100 120 Collector Current : IC [A] Collector Current : IC [A] 40 10 100µs 1 0.1 0.01 TC= 25ºC Single Pulse 1 10 80 60 40 20 100 0 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 100 Tj≦175ºC VGE=15V 0 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics 100 Tj= 25ºC VGE= 20V 80 VGE= 12V Collector Current : IC [A] Collector Current : IC [A] 100 Fig.6 Typical Output Characteristics VGE= 15V 60 VGE= 10V 40 20 0 VGE= 8V 0 1 2 3 4 VGE= 15V VGE= 12V 60 40 VGE= 10V VGE= 8V 20 0 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 40 30 20 Tj= 175ºC Tj= 25ºC 0 0 2 2 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 VCE= 10V 10 1 Collector To Emitter Voltage : VCE[V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector Current : IC [A] 50 VGE= 20V 80 0 5 Tj= 175ºC 4 6 8 10 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. VGE= 15V IC= 50A 3 IC= 25A 2 IC= 12A 1 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves 20 Tj= 25ºC 15 IC= 50A 10 IC= 25A IC= 12A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 20 Tj= 175ºC 15 IC= 50A 10 IC= 25A IC= 12A 5 0 5 10 Gate To Emitter Voltage : VGE [V] 1000 Switching Time [ns] Switching Time [ns] Fig.12 Typical Switching Time vs. Gate Resistance VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad td(off) tf 100 tf 100 td(off) tr td(on) 10 VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive ｌoad td(on) tr 0 10 20 30 40 10 50 Collector Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 15 0 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff 0.1 0.01 Eon VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad 0 10 20 30 40 Eon 0.1 0.01 50 Eoff 1 VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive ｌoad 0 Collector Current : IC [A] Capacitance [pF] 1000 Coes Cres f=1MHz VGE=0V Tj=25ºC 0.1 1 10 50 10 5 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 40 15 Gate To Emitter Voltage : VGE [V] Cies 1 0.01 30 Fig.16 Typical Gate Charge 10000 10 20 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 100 10 VCC=300V IC=25A Tj=25ºC 0 10 20 30 40 50 Gate Charge : Qg [nC] 8/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 100 80 60 40 Tj= 175ºC 20 Tj= 25ºC 0 300 Tj= 175ºC 200 100 0 0 0.5 1 1.5 2 2.5 VCC=400V diF/dt=200A/µs Inductive ｌoad 3 Tj= 25ºC 0 Forward Voltage : VF[V] Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 2.5 15 Tj= 175ºC 10 0 0 10 VCC=400V diF/dt=200A/µs Inductive ｌoad 20 30 40 40 50 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 1.5 Tj= 175ºC 1 0.5 Tj= 25ºC 0 50 Forward Current : IF [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 30 Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 Tj= 25ºC 20 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 5 10 0 10 20 30 40 50 Forward Current : IF [A] 9/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 1 0.2 0.1 PDM 0.1 0.05 0.02 0.01 0.01 0.0001 t1 Single Pulse 0.001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.2 0.1 1 0.05 0.01 0.0001 PDM Single Pulse 0.1 0.02 0.01 t1 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.001 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10/11 2020.09 - Rev.D Datasheet RGTH50TS65DGC13 lInductive Load Switching Circuit and Waveform Gate Drive Time D.U.T. D.U.T. 90% VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt VCE(sat) Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. Fig.24 Inductive Load Waveform 11/11 2020.09 - Rev.D Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001