RGTH60TS65DGC13

RGTH60TS65DGC13 Datasheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 30A VCE(sat) (Typ.) 1.6V PD 194W lFeatures TO-247GE (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging PFC Reel Size (mm) - Tape Width (mm) - UPS Tube Type Power Conditioner Basic Ordering Unit (pcs) 600 IH Packing code C13 Marking RGTH60TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 58 A TC = 100°C IC 30 A ICP*1 120 A TC = 25°C IF 40 A TC = 100°C IF 20 A IFP*1 120 A TC = 25°C PD 194 W TC = 100°C PD 97 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. 1/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.77 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.00 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 21.0mA 4.5 5.5 6.5 V Tj = 25°C - 1.6 2.1 V Tj = 175°C - 2.1 - Gate - Emitter Threshold Voltage IC = 30A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) 2/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1670 - Output Capacitance Coes VGE = 0V - 66 - Reverse Transfer Capacitance Cres f = 1MHz - 27 - Total Gate Charge Qg VCE = 300V - 58 - Gate - Emitter Charge Qge IC = 30A - 15 - Gate - Collector Charge Qgc VGE = 15V - 20 - Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 40 - Tj = 25°C - 105 - Inductive Load - 47 - td(on) IC = 30A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 40 - Tj = 175°C - 120 - Inductive Load - 59 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 120A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 60Ω, Tj = 175°C 3/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.35 1.8 Tj = 175°C - 1.15 - - 58 - ns - 6.5 - A - 0.21 - μC - 236 - ns - 10.7 - A - 1.36 - μC IF = 20A Diode Forward Voltage Diode Reverse Recovery Time VF trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr V IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 220 70 60 180 Collector Current : IC [A] Power Dissipation : PD [W] 200 160 140 120 100 80 60 40 50 40 30 20 　10 Tj≦175ºC VGE≧15V 20 0 0 0 25 50 75 100 125 150 0 175 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 1000 160 10µs 140 100 Collector Current : IC [A] Collector Current : IC [A] 25 10 100µs 1 0.1 TC= 25ºC Single Pulse 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tj= 25ºC Tj= 175ºC VGE= 12V 80 VGE= 15V VGE= 10V 60 40 VGE= 8V VGE= 15V VGE= 12V 80 60 VGE= 10V 40 20 20 VGE= 8V 0 0 0 1 2 3 4 0 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 1 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 60 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] VGE= 20V 100 VGE= 20V Collector Current : IC [A] Collector Current : IC [A] 100 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 VGE= 15V IC= 60A 3 IC= 30A 2 IC= 15A 1 0 25 12 Gate To Emitter Voltage : VGE [V] 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 60A IC= 30A 10 IC= 15A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC 15 IC= 60A 10 IC= 30A IC= 15A 5 0 5 20 10 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad td(off) 100 tf td(off) 100 tf tr td(on) VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive ｌoad td(on) tr 10 10 0 10 20 30 40 50 60 0 Collector Current : IC [A] 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Eoff 1 Eon 0.1 VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 10 20 30 40 50 0 60 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.16 Typical Gate Charge Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 10 10 5 VCC=300V IC=30A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] 10 20 30 40 50 60 Gate Charge : Qg [nC] 8/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] 120 Forward Current : IF [A] 100 80 60 40 Tj= 175ºC 20 Tj= 25ºC VCC=400V diF/dt=200A/µs Inductive ｌoad 300 Tj= 175ºC 200 100 Tj= 25ºC 0 0 0 0.5 1 1.5 2 2.5 0 3 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 Tj= 175ºC 1.5 1 0.5 Tj= 25ºC 0 0 10 20 30 40 50 0 Forward Current : IF [A] 10 20 30 40 50 Forward Current : IF [A] 9/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 1 0.2 0.1 PDM 0.1 t1 0.05 0.02 Single Pulse 0.01 0.01 0.0001 0.001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 0.2 0.1 1 PDM 0.1 Single Pulse 0.05 0.01 0.0001 0.02 t1 0.01 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.001 0.01 0.1 1 Pulse Width : t1[s] 10/11 2019.08 - Rev.A Datasheet RGTH60TS65DGC13 lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% IC 10% Fig.23 Inductive Load Circuit td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt VCE(sat) Irr Fig.24 Diode Reverce Recovery Waveform Fig.25 Inductive Load Waveform 11/11 2019.08 - Rev.A