RGTV00TS65DGC11

RGTV00TS65D Datasheet 650V 50A Field Stop Trench IGBT Outline VCES 650V IC(100°C) 50A VCE(sat) (Typ.) 1.5V PD 276W Features TO-247N (1)(2)(3) Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching & Low Switching Loss (1) Gate (2) Collector (3) Emitter *1 3) Short Circuit Withstand Time 2μs (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Applications Packaging Solar Inverter Reel Size (mm) - Tape Width (mm) - UPS Type Welding Tube Basic Ordering Unit (pcs) 450 IH Packing Code C11 PFC Marking RGTV00TS65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 95 A TC = 100°C IC 50 A 200 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 84 A TC = 100°C IF 50 A 200 A Diode Pulsed Forward Current Power Dissipation *1 IFP *1 TC = 25°C PD 276 W TC = 100°C PD 138 W Tj 40 to +175 °C Tstg 55 to +175 °C Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 2017.05 - Rev.A Datasheet RGTV00TS65D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.54 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.80 °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - ±200 nA VGE(th) VCE = 5V, IC = 34.3mA 5.0 6.0 7.0 V Tj = 25°C - 1.5 1.9 V Tj = 175°C - 1.85 - Gate - Emitter Threshold Voltage IC = 50A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2017.05 - Rev.A Datasheet RGTV00TS65D IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2890 - Output Capacitance Coes VGE = 0V - 116 - Reverse Transfer Capacitance Cres f = 1MHz - 48 - Total Gate Charge Qg VCE = 400V - 104 - Gate - Emitter Charge Qge IC = 50A - 21 - Gate - Collector Charge Qgc VGE = 15V - 37 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 41 - tr VGE = 15V, RG = 10Ω - 20 - Tj = 25°C - 142 - Inductive Load - 38 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.17 - Turn - off Switching Loss Eoff reverse recovery - 0.94 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 39 - tr VGE = 15V, RG = 10Ω - 23 - Tj = 175°C - 167 - Inductive Load - 80 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.25 - Turn - off Switching Loss Eoff reverse recovery - 1.28 - Unit pF nC ns mJ ns mJ IC = 200A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 100Ω, Tj = 175°C VCC ≦ 360V Short Circuit Withstand Time tsc VGE = 15V 2 - - μs Tj = 25°C www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 3/11 2017.05 - Rev.A Datasheet RGTV00TS65D IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 102 - ns - 11.2 - A - 0.64 - μC IF = 50A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 29.5 - μJ Diode Reverse Recovery Time trr - 177 - ns Diode Peak Reverse Recovery Current Irr - 15.2 - A Diode Reverse Recovery Charge Qrr - 1.62 - μC Diode Reverse Recovery Energy Err - 104.8 - μJ www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. IF = 50A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 50A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 110 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 100 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 80 70 60 50 40 30 　20 Tj≦175ºC VGE≧15V 10 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 240 1000 220 10µs 200 100 Collector Current : IC [A] Collector Current : IC [A] 90 10 100µs 1 0.1 TC= 25ºC Single Pulse 180 160 140 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 200 200 Tj= 25ºC VGE= 20V 160 VGE= 15V 140 120 VGE= 10V 100 80 Tj= 175ºC 180 VGE= 12V Collector Current : IC [A] Collector Current : IC [A] 180 VGE= 8V 60 40 160 VGE= 20V 140 VGE= 15V 120 VGE= 12V 100 20 VGE= 10V VGE= 8V 80 60 40 20 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 60 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] 1 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 3 IC= 100A IC= 50A 2 IC= 25A 1 0 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 100A IC= 50A 10 IC= 25A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC 15 IC= 100A 10 IC= 50A IC= 25A 5 0 20 5 10 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] td(off) 100 tf td(on) 10 tr 100 tf td(on) tr 10 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad 1 0 td(off) 1 10 20 30 40 50 60 70 80 90 100 0 Collector Current : IC [A] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 1 Eon 0.1 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 0 10 20 30 40 50 60 70 80 90 100 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.16 Typical Gate Charge Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 15 Cies Capacitance [pF] 10 10 5 VCC=400V IC=50A Tj=25ºC 0 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100110 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Gate Charge : Qg [nC] 8/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 200 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 180 160 140 120 Tj= 25ºC 100 Tj= 175ºC 80 60 40 20 0 0 0.5 1 1.5 2 2.5 VCC=400V diF/dt=200A/µs Inductive ｌoad 300 200 Tj= 175ºC 100 Tj= 25ºC 0 3 0 Forward Voltage : VF[V] Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 15 Tj= 175ºC 10 Tj= 25ºC 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 20 30 40 50 60 70 80 90 100 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 Tj= 175ºC 1.5 1 0.5 Tj= 25ºC 0 0 10 20 30 40 50 60 70 80 90 100 0 Forward Current : IF [A] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 90 100 Forward Current : IF [A] 9/11 2017.05 - Rev.A Datasheet RGTV00TS65D Electrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 1 0.1 0.2 D= 0.5 0.1 PDM 0.01 Single Pulse 0.05 0.02 t1 0.01 C1 764.2u 0.001 1E-6 1E-5 1E-4 C2 C3 R1 R2 R3 3.034m 2.519m 131.5m 168.5m 40.00m 1E-3 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 1E-2 1E-1 1E+0 Pulse Width : t1[s] Fig.22 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 1 0.1 0.2 D= 0.5 0.1 0.01 0.01 0.05 0.001 1E-6 PDM Single Pulse t1 0.02 C1 483.4u 1E-5 1E-4 C2 C3 R1 R2 R3 634.1u 4.584m 64.17m 123.7m 312.1m 1E-3 1E-2 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 1E-1 1E+0 Pulse Width : t1[s] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10/11 2017.05 - Rev.A Datasheet RGTV00TS65D Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% IC 10 Fig.23 Inductive Load Circuit td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt 10 Eon Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2017.05 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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