RGTV80TK65DGVC11

RGTV80TK65D Datasheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V 23A 1.5V 85W IC (100°C) VCE(sat) (Typ.) PD lFeatures TO-3PFM (1) (2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching & Low Switching Loss *1 3) Short Circuit Withstand Time 2μs (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications Solar Inverter Packaging UPS Reel Size (mm) - Tape Width (mm) - Welding Type IH PFC Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGTV80TK65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 39 A TC = 100°C IC 23 A ICP*1 160 A TC = 25°C IF 40 A TC = 100°C IF 23 A IFP*1 160 A TC = 25°C PD 85 W TC = 100°C PD 42 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.11 - Rev.A Datasheet RGTV80TK65D lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.75 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.00 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.5 1.9 V - 1.85 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 27.5mA IC = 40A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/11 2020.11 - Rev.A Datasheet RGTV80TK65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 2370 - Output Capacitance Coes VGE = 0V, - 94 - Reverse transfer Capacitance Cres f = 1MHz - 38 - Total Gate Charge Qg VCE = 400V, - 81 - Gate - Emitter Charge Qge IC = 40A, - 17 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) - 39 - - 17 - - 113 - - 45 - - 1.02 - - 0.71 - - 38 - - 19 - - 130 - - 86 - - 1.07 - - 1.01 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 160A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 100Ω, Tj = 175°C VCC ≦ 360V, Short Circuit Withstand Time tsc VGE = 15V, 2 - - μs Tj = 25°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/11 2020.11 - Rev.A Datasheet RGTV80TK65D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 101 - ns - 9.6 - A - 0.53 - μC IF = 40A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 25.1 - μJ Diode Reverse Recovery Time trr - 184 - ns Diode Peak Reverse Recovery Current Irr - 13.1 - A Diode Reverse Recovery Charge Qrr - 1.42 - μC Diode Reverse Recovery Energy Err - 102.5 - μJ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. IF = 40A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 40A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 50 80 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 100 60 40 20 40 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 180 1000 160 10μs 100 Collector Current : IC [A] Collector Current : IC [A] 25 100μs 10 1 0.1 TC = 25ºC Single Pulse 140 120 100 80 60 40 Tj ≤ 175ºC VGE = 15V 20 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 160 160 Tｊ = 25ºC Tｊ = 175ºC 140 VGE = 12V VGE = 20V 120 Collector Current : IC [A] Collector Current : IC [A] 140 VGE = 15V 100 VGE = 10V 80 60 40 VGE = 8V 20 VGE = 20V 120 VGE = 12V 80 VGE = 10V 60 40 VGE = 8V 20 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 3 4 5 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 60 50 40 30 20 Tj = 175ºC 10 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 80 70 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 15V 100 3 IC = 80A 2 IC = 40A 1 IC = 20A Tj = 25ºC 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 80A 15 IC = 40A IC = 20A 10 5 0 IC = 80A 15 IC = 40A IC = 20A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 10 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] Switching Time [ns] td(off) 100 tf td(on) 10 tr td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 40A, Tj = 175ºC Inductive load 1 1 0 20 40 60 80 0 20 30 40 50 Gate Resistance : Rg [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 7/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 Eon 1 Eoff 0.1 VCC = 400V, IC = 40A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0 20 40 60 80 0 Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 10000 Capacitance [pF] 1000 Coes 100 1 0.01 30 40 50 Cres Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies f = 1MHz VGE = 0V Tj = 25ºC 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 10 10 10 5 VCC = 400V IC = 40A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 Gate Charge : Qg [nC] 8/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage 160 Fig.18 Typical Diode Revese Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 140 120 100 80 Tj = 25ºC 60 Tj = 175ºC 40 20 0 VCC = 400V diF/dt = 200A/μs Inductive load 300 200 Tj = 175ºC 100 Tj = 25ºC 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF [V] Forward Current : IF [A] Tj = 175ºC 10 Tj = 25ºC 5 VCC = 400V diF/dt = 200A/μs Inductive load Fig.20 Typical Diode Rrverse Recovery Charge vs. Forward Current 2.5 Reverse Recovery Charge : Qrr [μC] Reverse Recovery Current : Irr [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 20 15 10 20 30 40 50 60 70 80 0 VCC = 400V diF/dt = 200A/μs Inductive load 2 1.5 Tj = 175ºC 1 0.5 Tj = 25ºC 0 0 10 20 30 40 50 60 70 80 0 Forward Current : IF [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 Forward Current : IF [A] 9/11 2020.11 - Rev.A Datasheet RGTV80TK65D lElectrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1E+1 1E+0 0.1 0.2 D = 0.5 1E-1 PDM t1 1E-2 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse 0.01 0.02 C1 826.6u 0.05 1E-3 1E-6 1E-5 1E-4 C2 9.204m 1E-3 C3 187.1m R1 280.1m 1E-2 R2 297.1m R3 453.0m 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1E+1 D = 0.5 1E+0 0.1 0.2 1E-1 PDM t1 1E-2 0.02 1E-3 1E-6 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse 0.01 C1 622.0u 0.05 1E-5 1E-4 C2 5.92mm 1E-3 C3 173.8m 1E-2 R1 282.3m R2 398.7m 1E-1 R3 496.8m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10/11 2020.11 - Rev.A Datasheet RGTV80TK65D ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% tr td(on) trr , Qrr IF ton diF/dt tf td(off) toff VCE 10% Irr Eon Fig.25 Diode Reverse Recovery Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2020.11 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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