RGW50TK65
Datasheet
650V 25A Field Stop Trench IGBT
lOutline
VCES
650V
18A
1.5V
67W
IC (100°C)
VCE(sat) (Typ.)
PD
lFeatures
TO-3PFM
(1) (2)(3)
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) High Speed Switching
3) Low Switching Loss & Soft Switching
(1)
4) Pb - free Lead Plating ; RoHS Compliant
(3)
lApplication
lPackaging Specifications
PFC
Packaging
UPS
Reel Size (mm)
-
Tape Width (mm)
-
Welding
Type
Solar Inverter
IH
Tube
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGW50TK65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
±30
V
TC = 25°C
IC
30
A
TC = 100°C
IC
18
A
ICP*1
100
A
TC = 25°C
PD
67
W
TC = 100°C
PD
33
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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2020.11 - Rev.A
Datasheet
RGW50TK65
lThermal Resistance
Parameter
Symbol
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Values
Min.
Typ.
Max.
-
-
2.24
Unit
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
Conditions
BVCES IC = 10μA, VGE = 0V
Values
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage
Current
IGES
VGE = ±30V, VCE = 0V
-
-
±200
nA
5.0
6.0
7.0
V
-
1.5
1.9
V
-
1.85
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 16.4mA
IC = 25A, VGE = 15V,
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 175°C
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2020.11 - Rev.A
Datasheet
RGW50TK65
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V,
-
2080
-
Output Capacitance
Coes
VGE = 0V,
-
56
-
Reverse transfer Capacitance
Cres
f = 1MHz
-
38
-
Total Gate Charge
Qg
VCE = 400V,
-
73
-
Gate - Emitter Charge
Qge
IC = 25A,
-
15
-
Gate - Collector Charge
Qgc
VGE = 15V
-
28
-
Turn - on Delay Time
td(on)
-
35
-
-
11
-
-
102
-
-
53
-
-
0.39
-
-
0.43
-
-
34
-
-
12
-
-
118
-
-
78
-
-
0.41
-
-
0.60
-
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
Turn - on Delay Time
td(on)
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
Unit
pF
nC
ns
mJ
ns
mJ
IC = 100A, VCC = 520V,
Reverse Bias Safe Operating
Area
RBSOA VP = 650V, VGE = 15V,
FULL SQUARE
-
RG = 100Ω, Tj = 175°C
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2020.11 - Rev.A
Datasheet
RGW50TK65
lElectrical Characteristic Curves
Fig.2 Collector Current
vs. Case Temperature
40
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation
vs. Case Temperature
80
60
40
20
30
20
10
Tj ≤ 175ºC
VGE ≥ 15V
0
0
0
25
50
0
75 100 125 150 175
Case Temperature : TC [°C ]
50
75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
120
1000
1μs
100
100
Collector Current : IC [A]
Collector Current : IC [A]
25
10μs
10
100μs
1
0.1
80
60
40
20
TC = 25ºC
Single Pulse
Tj ≤ 175ºC
VGE = 15V
0
0.01
1
10
100
0
1000
Collector To Emitter Voltage : VCE [V]
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200
400
600
800
Collector To Emitter Voltage : VCE [V]
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2020.11 - Rev.A
Datasheet
RGW50TK65
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
100
100
Tj = 25ºC
Tj = 175ºC
VGE = 20V
80
Collector Current : IC [A]
Collector Current : IC [A]
VGE = 15V
VGE = 12V
VGE = 10V
60
40
VGE = 8V
20
0
VGE = 20V
80
VGE = 15V
60
40
VGE = 8V
20
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE [V]
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
4
Fig.7 Typical Transfer Characteristics
50
VGE = 15V
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
VCE = 10V
Collector Current : IC [A]
VGE = 10V
VGE = 12V
40
30
20
10
Tj = 175ºC
3
IC = 50A
2
IC = 25A
IC = 12.5A
1
Tj = 25ºC
0
0
0
2
4
6
8
10
25
12
Gate To Emitter Voltage : VGE [V]
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50
75
100 125 150 175
Junction Temperature : Tj [°C ]
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2020.11 - Rev.A
Datasheet
RGW50TK65
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Tj = 175ºC
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Tj = 25ºC
IC = 50A
15
IC = 25A
IC = 12.5A
10
5
0
IC = 50A
15
IC = 25A
IC = 12.5A
10
5
0
5
10
15
20
5
Gate To Emitter Voltage : VGE [V]
Switching Time [ns]
Switching Time [ns]
20
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
td(off)
tf
td(on)
10
tr
15
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
100
10
td(off)
100
tf
td(on)
10
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load
1
1
0
10
20
30
40
50
0
20
30
40
50
Gate Resistance : RG [Ω]
Collecter Current : IC [A]
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2020.11 - Rev.A
Datasheet
RGW50TK65
lElectrical Characteristic Curves
Fig.14 Typocal Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
Fig.13 Typical Switching Energy Losses
vs. Collector Current
10
1
Eoff
0.1
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.01
1
Eoff
Eon
0.1
VCC = 400V, IC = 25A,
VGE = 15V, Tj = 175ºC
Inductive load
0.01
0
10
20
30
40
50
0
Fig.15 Typical Capacitance
vs. Collector to Emitter Voltage
10000
Gate To Emitter Voltage : V GE [V]
Capacitance [pF]
Coes
1
0.01
40
50
15
1000
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
30
Fig.16 Typical Gate Charge
Cies
10
20
Gate Resistance : RG [Ω]
Collecter Current : IC [A]
100
10
10
5
VCC = 400V
IC = 25A
Tj = 25ºC
0
0.1
1
10
100
0
Collector To Emitter Voltage : VCE [V]
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10 20 30 40 50 60 70 80
Gate Charge : Qg [nC]
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2020.11 - Rev.A
Datasheet
RGW50TK65
lElectrical Characteristic Curves
Fig.17 Typical IGBT Transient Thermal Impedance
Transient Thermal Impedance
: Zθ(j-c) [°C/W]
1E+1
0.1
0.2
D = 0.5
1E+0
1E-1
PDM
t1
Single Pulse
1E-2
0.02
C1
556.1u
0.05
1E-3
1E-6
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.01
1E-5
1E-4
C2
7.152m
1E-3
C3
176.6m
1E-2
R1
402.5m
R2
435.2m
1E-1
R3
481.1m
1E+0
Pulse Width : t1 [s]
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2020.11 - Rev.A
Datasheet
RGW50TK65
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
Fig.18 Inductive Load Circuit
IC
10%
tr
td(on)
ton
tf
td(off)
toff
VCE
10%
Eon
Eoff
VCE(sat)
Fig.19 Inductive Load Waveform
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2020.11 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102S