RGW50TS65DGC11

RGW50TS65DGC13 Datasheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V 25A 1.5V 156W IC (100°C) VCE(sat) (Typ.) PD lFeatures TO-247GE (1) (2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Welding Type Solar Inverter IH Tube Basic Ordering Unit (pcs) 600 Packing Code C13 Marking RGW50TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 50 A TC = 100°C IC 25 A ICP*1 100 A TC = 25°C IF 40 A TC = 100°C IF 20 A IFP*1 100 A TC = 25°C PD 156 W TC = 100°C PD 78 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 1/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.96 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.62 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.5 1.9 V - 1.85 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 16.4mA IC = 25A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 2/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 2080 - Output Capacitance Coes VGE = 0V, - 56 - Reverse transfer Capacitance Cres f = 1MHz - 38 - Total Gate Charge Qg VCE = 400V, - 73 - Gate - Emitter Charge Qge IC = 25A, - 15 - Gate - Collector Charge Qgc VGE = 15V - 28 - Turn - on Delay Time td(on) - 35 - - 11 - - 102 - - 53 - - 0.39 - - 0.43 - - 34 - - 12 - - 118 - - 78 - - 0.41 - - 0.60 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 25A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 25A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 100A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 100Ω, Tj = 175℃ www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 3/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 92 - ns - 6.7 - A - 0.34 - μC IF = 20A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 14.1 - μJ Diode Reverse Recovery Time trr - 123 - ns Diode Peak Reverse Recovery Current Irr - 7.8 - A Diode Reverse Recovery Charge Qrr - 0.59 - μC Diode Reverse Recovery Energy Err - 30.7 - μJ www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature 180 Fig.2 Collector Current vs. Case Temperature 60 50 140 Collector Current : IC [A] Power Dissipation : PD [W] 160 120 100 80 60 40 40 30 20 10 20 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 120 1000 1μs 100 100 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 80 60 40 20 TC = 25ºC Single Pulse Tj ≤ 175ºC VGE = 15V 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 100 100 Tｊ = 25ºC Tｊ = 175ºC VGE = 20V 80 Collector Current : IC [A] Collector Current : IC [A] VGE = 15V VGE = 12V VGE = 10V 60 40 VGE = 8V 20 0 VGE = 20V 80 VGE = 15V 60 40 VGE = 8V 20 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 1 2 3 4 5 Collector To Emitter Voltage : VCE [V] Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 50 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V Collector Current : IC [A] VGE = 10V VGE = 12V 40 30 20 10 Tj = 175ºC 3 IC = 50A 2 IC = 25A IC = 12.5A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 50A 15 IC = 25A IC = 12.5A 10 5 0 IC = 50A 15 IC = 25A IC = 12.5A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] Switching Time [ns] Switching Time [ns] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 td(off) tf td(on) 10 tr 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 10 td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 25A, Tj = 175ºC Inductive load 1 1 0 10 20 30 40 50 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10 7/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 1 Eoff Eon 0.1 VCC = 400V, IC = 25A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0 10 20 30 40 50 0 Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 10000 Capacitance [pF] 1000 Coes Cres f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 30 40 50 Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies 10 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 100 10 10 5 VCC = 400V IC = 25A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 Gate Charge : Qg [nC] 8/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.18 Typical Diode Revese Recovery Time vs. Forward Current 200 Reverse Recovery Time : trr [ns] Forward Current : IF [A] Fig.17 Typical Diode Forward Current vs. Forward Voltage 100 80 60 40 Tj = 25ºC Tj = 175ºC 20 0 150 Tj = 175ºC 100 Tj = 25ºC 50 VCC = 400V diF/dt = 200A/μs Inductive load 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF [V] 30 40 50 Fig.20 Typical Diode Rrverse Recovery Charge vs. Forward Current 1.5 Reverse Recovery Charge : Qrr [μC] Reverse Recovery Current : Irr [A] 20 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 15 10 Tj = 175ºC 5 Tj = 25ºC 10 VCC = 400V diF/dt = 200A/μs Inductive load 0 VCC = 400V diF/dt = 200A/μs Inductive load 1 Tj = 175ºC 0.5 Tj = 25ºC 0 0 10 20 30 40 50 0 Forward Current : IF [A] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Forward Current : IF [A] 9/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 lElectrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 PDM 0.01 t1 Single Pulse t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 C1 779.2u 0.05 0.001 1E-6 1E-5 1E-4 C2 2.827m 1E-3 C3 26.23m R1 285.2m 1E-2 R2 284.4m R3 19.09m 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM 0.01 t1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse 0.001 1E-6 C1 65.51u 1E-5 1E-4 C2 373.7u 1E-3 C3 1.268m 1E-2 R1 200.5m R2 341.9m 1E-1 R3 457.6m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10/11 2023.03 - Rev.A Datasheet RGW50TS65DGC13 ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% tr td(on) trr , Qrr IF ton diF/dt td(off) tf toff VCE 10% Irr Eon Fig.25 Diode Reverse Recovery Waveform www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2023.03 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001