RGW60TS65DGC11

RGW60TS65DGC13 Datasheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC (100℃) 30A VCE(sat) (Typ.) 1.5V PD 178W lFeatures TO-247GE (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplications lPackaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Welding Tube Type Solar Inverter Basic Ordering Unit (pcs) 600 IH Packing Code C13 Marking RGW60TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 60 A TC = 100°C IC 30 A ICP*1 120 A TC = 25°C IF 40 A TC = 100°C IF 20 A IFP*1 120 A TC = 25°C PD 178 W TC = 100°C PD 89 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 1/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.84 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.62 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 20.0mA 5.0 6.0 7.0 V Tj = 25°C - 1.5 1.9 V Tj = 175°C - 1.85 - Gate - Emitter Threshold Voltage IC = 30A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 2/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2530 - Output Capacitance Coes VGE = 0V - 65 - Reverse Transfer Capacitance Cres f = 1MHz - 46 - Total Gate Charge Qg VCE = 400V - 84 - Gate - Emitter Charge Qge IC = 30A - 17 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 37 - tr VGE = 15V, RG = 10Ω - 13 - Tj = 25°C - 114 - Inductive Load - 35 - Rise Time pF nC ns Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 0.48 - Turn - off Switching Loss Eoff reverse recovery - 0.49 - Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 36 - tr VGE = 15V, RG = 10Ω - 14 - Tj = 175°C - 133 - Inductive Load - 76 - mJ Rise Time ns Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 0.49 - Turn - off Switching Loss Eoff reverse recovery - 0.63 - mJ IC = 120A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 100Ω, Tj = 175°C www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 3/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 92 - ns - 6.7 - A - 0.34 - μC IF = 20A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 14.1 - μJ Diode Reverse Recovery Time trr - 123 - ns Diode Peak Reverse Recovery Current Irr - 7.8 - A Diode Reverse Recovery Charge Qrr - 0.59 - μC Diode Reverse Recovery Energy Err - 30.7 - μJ www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 70 200 60 160 Collector Current : IC [A] Power Dissipation: PD [W] 180 140 120 100 80 60 40 50 40 30 20 Tj≦175ºC VGE≧15V 10 20 0 0 0 25 50 75 100 125 150 0 175 Case Temperature : TC [ºC] 50 75 100 125 150 175 Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 1µs 140 100 Collector Current : IC [A] Collector Current : IC [A] 25 10µs 10 100µs 1 0.1 Tc=25ºC Single Pulse 120 100 80 60 40 Tj≦175ºC VGE≧15V 20 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tj=175ºC 100 VGE=20V 80 VGE=15V 100 VGE=12V Collector Current : IC [A] Collector Current : IC [A] Tj=25ºC VGE=10V 60 VGE=8V 40 20 80 VGE=12V VGE=15V VGE=10V 60 40 VGE=8V 20 0 0 0 1 2 3 4 0 5 1 2 3 4 5 Collector To Emitter Voltage : VCE [V] Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 60 4 Collector To Emitter Saturation Voltage : VCE (sat) [V] VCE=10V Collector Current : IC [A] VGE=20V 50 40 30 20 Tj=175ºC 10 Tj=25ºC 0 0 2 4 6 8 10 12 3 IC=60A 2 IC=30A IC=15A 1 0 25 Gate to Emitter Voltage : VGE [V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. VGE=15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Collector To Emitter Saturation Voltage : VCE (sat) [V] Collector To Emitter Saturation Voltage : VCE (sat) [V] 20 Tj=25ºC 15 IC=60A 10 IC=30A IC=15A 5 0 Tj=175ºC 15 IC=60A 10 IC=30A IC=15A 5 0 5 10 15 20 5 Gate to Emitter Voltage : VGE [V] 15 20 Gate to Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current Fig.12 Typical Switching Time vs. Gate Resistance 1000 1000 tf Switching Time [ns] Switching Time [ns] 10 100 td(off) td(on) 10 td(off) tf 100 10 td(on) tr tr VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive load VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load 1 1 0 10 20 30 40 50 60 0 Collector Current : IC [A] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load 0.01 Eoff 1 Eon 0.1 VCC=400V, IC=30A VGE=15V, Tj=175ºC Inductive load 0.01 0 10 20 30 40 50 60 0 20 30 40 50 Gate Resistance : RG [Ω] Collector Current : IC [A] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 10000 Gate to Emitter Voltage : VGE [V] Cies 1000 Capacitance [pF] 10 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 10 5 VCC=400V IC=30A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 Gate Charge : Qg[nC] 8/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current Fig.17 Typical Diode Forward Current vs. Forward Voltage 120 Reverse Recovery Time : trr [ns] 400 Forward Current : IF [A] 100 80 60 Tj=25ºC 40 Tj=175ºC 20 0 300 200 Tj=175ºC 100 0 0 1 2 3 4 5 0 10 20 30 40 50 60 Forward Current : IF [A] Forward Voltage : VF[V] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge 2.5 Reverse Recovery Charge : Qrr [μC] 20 Reverse Recovery Curren : Irr [A] VCC=400V diF/dt=200A/μs Inductive load Tj=25ºC 15 10 Tj=175ºC 5 Tj=25ºC VCC=400V diF/dt=200A/μs Inductive load VCC=400V diF/dt=200A/μs Inductive load 2 1.5 1 Tj=175ºC 0.5 Tj=25ºC 0 0 0 10 20 30 40 50 0 60 Forward Current : IF [A] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 Forward Current : IF [A] 9/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lElectrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance 1 Transient Thermal Impedance : ZthJC [ºC/W] D= 0.5 0.2 0.1 0.1 Single Pulse 0.01 PDM 0.01 0.02 t1 0.05 C1 71.38u 0.001 1E-6 1E-5 C2 539.3u 1E-4 C3 R1 R2 R3 602.0u 92.71m 23.69m 413.6m 1E-3 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 1E-2 1E-1 1E+0 Pulse Width : t1[s] Fig.22 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 1 D= 0.5 0.2 0.1 Single Pulse 0.02 0.01 0.1 0.01 PDM 0.05 t1 C1 65.51u 0.001 1E-6 1E-5 1E-4 C2 373.7u C3 R1 R2 R3 1.268m 200.5m 341.9m 457.6m 1E-3 1E-2 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 1E-1 1E+0 Pulse Width : t1[s] www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. 10/11 2023.03 - Rev.A Datasheet RGW60TS65DGC13 lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt 10% Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2023 ROHM Co., Ltd. All rights reserved. Eon Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2023.03 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. 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The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001