RGW60TS65HRC11

RGW60TS65HR Datasheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V 30A 1.5V 178W IC (100°C) VCE(sat) (Typ.) PD lFeatures TO-247N (1) (2)(3) lInner Circuit 1) AEC-Q101 Qualified (2) 2) Low Collector - Emitter Saturation Voltage 3) Low Switching Loss & Soft Switching (1) Gate (2) Collector (3) Emitter (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications Automotive Packaging On & Off Board Chargers Reel Size (mm) - Tape Width (mm) - DC-DC Converters Type PFC Industrial Inverter Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGW60TS65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 64 A TC = 100°C IC 39 A ICP*1 120 A TC = 25°C PD 178 W TC = 100°C PD 89 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/10 2021.12 - Rev.B Datasheet RGW60TS65HR lThermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 0.84 Unit C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.5 1.9 V - 1.85 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 20.0mA IC = 30A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 2/10 2021.12 - Rev.B Datasheet RGW60TS65HR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 2530 - Output Capacitance Coes VGE = 0V, - 65 - Reverse transfer Capacitance Cres f = 1MHz - 46 - Total Gate Charge Qg VCE = 400V, - 84 - Gate - Emitter Charge Qge IC = 30A, - 17 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) - 36 - - 9 - - 107 - - 55 - - 0.16 - - 0.24 - - 34 - - 10 - - 139 - - 76 - - 0.17 - - 0.33 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 15A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 15A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 120A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 100Ω, Tj = 175℃ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature 200 Fig.2 Collector Current vs. Case Temperature 70 60 160 Collector Current : IC [A] Power Dissipation : PD [W] 180 140 120 100 80 60 40 50 40 30 20 10 20 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 140 1μs 100 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 120 100 80 60 40 Tj ≤ 175ºC VGE = 15V 20 TC = 25ºC Single Pulse 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 4/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tｊ = 25ºC Collector Current : IC [A] VGE = 20V 100 Collector Current : IC [A] Tｊ = 175ºC VGE = 15V 80 VGE = 12V VGE = 10V 60 VGE = 8V 40 20 100 VGE = 20V VGE = 15V 80 VGE = 12V VGE = 10V 60 40 VGE = 8V 20 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 60 3 4 5 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 50 Collector Current : IC [A] 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 40 30 20 Tj = 175ºC 10 1 Collector To Emitter Voltage : VCE [V] Tj = 25ºC 3 IC = 60A 2 IC = 30A IC = 15A 1 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 60A 15 IC = 30A IC = 15A 10 5 0 IC = 60A 15 IC = 30A IC = 15A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 100 Coes 10 Cres f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 20 Fig.12 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Capacitance [pF] 1000 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Capacitance vs. Collector to Emitter Voltage 10000 Cies 10 10 5 VCC = 400V IC = 30A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 Gate Charge : Qg [nC] 6/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.14 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] Switching Time [ns] Fig.13 Typical Switching Time vs. Collector Current 1000 tf 100 td(off) td(on) 10 tr td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load VCC = 400V, VGE = 15V, IC = 15A, Tj = 25ºC Inductive load 1 1 0 10 20 30 40 50 60 0 10 40 50 Fig.16 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Fig.15 Typical Switching Energy Losses vs. Collector Current 10 Switching Energy Losses [mJ] 30 Gate Resistance : Rg [Ω] Collecter Current : IC [A] 1 Eoff 0.1 20 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load 0.01 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, IC = 15A, Tj = 25ºC Inductive load 0.01 0 10 20 30 40 50 60 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 7/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.18 Typical Switching Time vs. Gate Resistance 1000 tf 100 Switching Time [ns] Switching Time [ns] Fig.17 Typical Switching Time vs. Collector Current 1000 td(off) td(on) 10 tr td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 15A, Tj = 175ºC Inductive load 1 1 0 10 20 30 40 50 60 0 10 40 50 Fig.20 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Fig.19 Typical Switching Energy Losses vs. Collector Current 10 Switching Energy Losses [mJ] 30 Gate Resistance : Rg [Ω] Collecter Current : IC [A] 1 Eoff 0.1 20 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, IC = 15A, Tj = 175ºC Inductive load 0.01 0 10 20 30 40 50 60 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 8/10 2021.12 - Rev.B Datasheet RGW60TS65HR lElectrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 Single Pulse PDM 0.01 0.01 0.02 t1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.05 C1 71.38u 0.001 1E-6 1E-5 1E-4 C2 539.3u 1E-3 C3 602.0u 1E-2 R1 92.71m R2 23.69m 1E-1 R3 413.6m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 9/10 2021.12 - Rev.B Datasheet RGW60TS65HR ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.22 Inductive Load Circuit IC 10% tr td(on) ton td(off) tf toff VCE 10% Eon Eoff VCE(sat) Fig.23 Inductive Load Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10/10 2021.12 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001