RGW80TS65CHRC11

RGW80TS65CHR Datasheet 650V 40A Hybrid IGBT with Built-In SiC-SBD lOutline VCES 650V 40A 1.5V 214W IC (100°C) VCE(sat) (Typ.) PD lFeatures TO-247N (1) (2)(3) lInner Circuit 1) AEC-Q101 Qualified (2) (1) Gate (2) Collector (3) Emitter 2) Low Collector - Emitter Saturation Voltage *1 3) Low Switching Loss & Soft Switching (1) 4) Built in No Recovery Silicon Carbide SBD *1 Built in SiC-SBD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications Automotive Packaging On & Off Board Chargers Reel Size (mm) - Tape Width (mm) - DC-DC Converters Type PFC Industrial Inverter Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGW80TS65C lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 81 A TC = 100°C IC 48 A ICP*1 160 A TC = 25°C IF 39 A TC = 100°C IF 25 A IFP*1 100 A TC = 25°C PD 214 W TC = 100°C PD 107 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.70 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.34 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 5mA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 5 mA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.5 1.9 V - 1.85 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 26.0mA IC = 40A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 2/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 3320 - Output Capacitance Coes VGE = 0V, - 83 - Reverse transfer Capacitance Cres f = 1MHz - 60 - Total Gate Charge Qg VCE = 400V, - 110 - Gate - Emitter Charge Qge IC = 40A, - 23 - Gate - Collector Charge Qgc VGE = 15V - 41 - Turn - on Delay Time td(on) - 43 - - 11 - - 145 - - 40 - - 0.12 - - 0.34 - - 40 - - 12 - - 178 - - 79 - - 0.14 - - 0.52 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 20A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 20A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 160A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 100Ω, Tj = 175℃ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lSiC-SBD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.35 1.55 Tj = 175°C - 1.63 - - 33 - ns - 2.7 - A - 53 - nC IF = 20A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 1.4 - μJ Diode Reverse Recovery Time trr - 37 - ns Diode Peak Reverse Recovery Current Irr - 2.7 - A Diode Reverse Recovery Charge Qrr - 59 - nC Diode Reverse Recovery Energy Err - 1.7 - μJ Total Capacitance C VR = 1V,f=1MHz - 730 - VR = 600V,f=1MHz - 74 - www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 20A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/13 pF 2021.12 - Rev.B Datasheet RGW80TS65CHR Fig.1 Power Dissipation vs. Case Temperature 240 220 200 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Fig.2 Collector Current vs. Case Temperature 90 80 Collector Current : IC [A] Power Dissipation : PD [W] lElectrical Characteristic Curves 70 60 50 40 30 20 Tj ≤ 175ºC VGE ≥ 15V 10 0 0 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 200 1000 1μs 100 180 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 100μs 10 1 0.1 TC = 25ºC Single Pulse 160 140 120 100 80 60 40 Tj ≤ 175ºC VGE = 15V 20 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 160 160 Tｊ = 25ºC Tｊ = 175ºC 140 VGE = 20V 120 Collector Current : IC [A] Collector Current : IC [A] 140 VGE = 15V VGE = 10V VGE = 12V 100 80 60 VGE = 8V 40 20 VGE = 15V 100 VGE = 12V VGE = 10V 80 60 VGE = 8V 40 20 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 3 4 5 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 60 50 40 30 20 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 80 70 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 20V 120 Tj = 175ºC 10 Tj = 25ºC 3 IC = 80A 2 IC = 40A 1 IC = 20A 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 80A 15 IC = 40A IC = 20A 10 5 0 IC = 80A 15 IC = 40A IC = 20A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] Coes 100 Cres 10 f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 20 Fig.12 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Capacitance [pF] 1000 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Capacitance vs. Collector to Emitter Voltage 10000 Cies 10 10 5 VCC = 400V IC = 40A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 120 Gate Charge : Qg [nC] 7/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.13 Typical Switching Time vs. Collector Current 1000 Fig.14 Typical Switching Time vs. Gate Resistance 1000 td(off) Switching Time [ns] Switching Time [ns] td(off) 100 td(on) tf 10 tr td(on) 100 tf 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load VCC = 400V, VGE = 15V, IC = 20A, Tj = 25ºC Inductive load 1 1 0 10 20 30 40 50 60 70 80 0 10 40 50 Fig.16 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Fig.15 Typical Switching Energy Losses vs. Collector Current 10 Switching Energy Losses [mJ] 30 Gate Resistance : RG [Ω] Collecter Current : IC [A] 1 Eoff 0.1 Eon 20 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load 0.01 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, IC = 20A, Tj = 25ºC Inductive load 0.01 0 10 20 30 40 50 60 70 80 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 8/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.17 Typical Switching Time vs. Collector Current 1000 Fig.18 Typical Switching Time vs. Gate Resistance 1000 td(off) Switching Time [ns] Switching Time [ns] td(off) 100 tf td(on) 10 tr 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 20A, Tj = 175ºC Inductive load 1 1 0 10 20 30 40 50 60 70 80 0 10 40 50 Fig.20 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.19 Typical Switching Energy Losses vs. Collector Current 10 Eoff 0.1 Eon 30 Gate Resistance : RG [Ω] Collecter Current : IC [A] 1 20 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, IC = 20A, Tj = 175ºC Inductive load 0.01 0 10 20 30 40 50 60 70 80 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 9/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.21 Typical Diode Forward Current vs. Forward Voltage 100 Fig.22 Typical Diode Revese Recovery Time vs. Forward Current 50 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 90 80 70 60 Tj = 25ºC 50 40 30 Tj = 175ºC 20 10 0 Tj = 175ºC 40 30 Tj = 25ºC 20 10 VCC = 400V diF/dt = 200A/μs Inductive load 0 0 1 2 3 4 5 0 Forward Voltage : VF [V] Tj = 25ºC Tj = 175ºC 1 60 80 100 Fig.24 Typical Diode Rrverse Recovery Charge vs. Forward Current 70 Reverse Recovery Charge : Qrr [nC] Reverse Recovery Current : Irr [A] 4 2 40 Forward Current : IF [A] Fig.23 Typical Diode Reverse Recovery Current vs. Forward Current 5 3 20 VCC = 400V diF/dt = 200A/μs Inductive load 0 Tj = 175ºC 60 50 40 Tj = 25ºC 30 20 VCC = 400V diF/dt = 200A/μs Inductive load 10 0 0 20 40 60 80 100 0 Forward Current : IF [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 Forward Current : IF [A] 10/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.25 Typical Diode Capacitance vs. Reverse Voltage Fig.26 Typical Diode Capacitance Store Energy 10 Capacitance Stored Energy : EC[mJ] Capacitance : Ct [pF] 10000 1000 100 10 f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 8 6 4 2 0 0.1 1 10 100 0 Reverse Voltage : VR [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 100 200 300 400 Reverse Voltage : VR [V] 11/13 2021.12 - Rev.B Datasheet RGW80TS65CHR lElectrical Characteristic Curves Fig.27 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 PDM Single Pulse 0.01 t1 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.02 0.05 C1 225.2u 0.001 1E-6 1E-5 1E-4 C2 644.8u 1E-3 C3 1.012m R1 84.37m 1E-2 R2 51.91m R3 303.7m 1E-1 1E+0 Pulse Width : t1 [s] Fig.28 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 10 0.1 0.2 D = 0.5 1 0.1 PDM t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.05 0.001 1E-6 t1 Single Pulse 0.01 0.02 1E-5 C1 886.2u 1E-4 C2 3.724m 1E-3 C3 39.86m 1E-2 R1 207.7m R2 684.8m 1E-1 R3 327.9m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 12/13 2021.12 - Rev.B Datasheet RGW80TS65CHR ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.29 Inductive Load Circuit IC 10% tr td(on) trr , Qrr IF ton diF/dt tf td(off) toff VCE 10% Irr Eon Fig.31 Diode Reverse Recovery Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.30 Inductive Load Waveform 13/13 2021.12 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001