RGW80TS65GC11

RGW80TS65 Datasheet 650V 40A Field Stop Trench IGBT Outline VCES 650V IC (100℃) 40A VCE(sat) (Typ.) 1.5V PD 214W TO-247N (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) Applications Packaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Welding Type Solar Inverter IH Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGW80TS65 Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 78 A TC = 100°C IC 40 A ICP*1 160 A TC = 25°C PD 214 W TC = 100°C PD 107 W Tj 40 to +175 °C Tstg 55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/9 2017.10 - Rev.A Datasheet RGW80TS65 Thermal Resistance Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Values Min. Typ. Max. - - 0.70 Unit °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 26.0mA 5.0 6.0 7.0 V Tj = 25°C - 1.5 1.9 V Tj = 175°C - 1.85 - Gate - Emitter Threshold Voltage IC = 40A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/9 2017.10 - Rev.A Datasheet RGW80TS65 IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 3320 - Output Capacitance Coes VGE = 0V - 83 - Reverse Transfer Capacitance Cres f = 1MHz - 60 - Total Gate Charge Qg VCE = 400V - 110 - Gate - Emitter Charge Qge IC = 40A - 23 - Gate - Collector Charge Qgc VGE = 15V - 41 - Turn - on Delay Time td(on) IC = 40A, VCC = 400V - 44 - tr VGE = 15V, RG = 10Ω - 17 - Tj = 25°C - 143 - Inductive Load - 34 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 0.76 - Turn - off Switching Loss Eoff reverse recovery - 0.72 - Turn - on Delay Time td(on) IC = 40A, VCC = 400V - 41 - tr VGE = 15V, RG = 10Ω - 18 - Tj = 175°C - 158 - Inductive Load - 74 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 0.76 - Turn - off Switching Loss Eoff reverse recovery - 0.91 - Unit pF nC ns mJ ns mJ IC = 160A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 100Ω, Tj = 175°C www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 3/9 2017.10 - Rev.A Datasheet RGW80TS65 Electrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 240 90 220 80 200 Collector Current : IC [A] Power Dissipation: PD [W] Fig.1 Power Dissipation vs. Case Temperature 180 160 140 120 100 80 60 40 70 60 50 40 30 20 Tj≦175ºC VGE≧15V 10 20 0 0 0 25 50 75 100 125 150 0 175 Case Temperature : TC [ºC] 50 75 100 125 150 175 Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 1000 200 1µs 180 100 160 Collector Current : IC [A] Collector Current : IC [A] 25 10µs 10 100µs 1 0.1 Tc=25ºC Single Pulse 10 100 100 80 60 40 Tj≦175ºC VGE≧15V 0 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 120 20 0.01 1 140 200 400 600 800 Collector To Emitter Voltage : VCE[V] 4/9 2017.10 - Rev.A Datasheet RGW80TS65 Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 160 160 Tj=25ºC VGE=20V VGE=12V 120 VGE=15V 100 VGE=10V 80 60 VGE=8V 40 3 4 VGE=10V 60 40 0 2 VGE=12V VGE=15V 80 0 VGE=8V 0 5 1 2 3 4 5 Collector To Emitter Voltage : VCE [V] Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 80 Collector To Emitter Saturation Voltage : VCE (sat) [V] VCE=10V 70 Collector Current : IC [A] 100 20 1 VGE=20V 120 20 0 Tj=175ºC 140 Collector Current : IC [A] Collector Current : IC [A] 140 60 50 40 30 20 Tj=175ºC Tj=25ºC 10 0 0 2 4 6 8 10 3 IC=80A 2 IC=40A IC=20A 1 0 25 12 Gate to Emitter Voltage : VGE [V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VGE=15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 5/9 2017.10 - Rev.A Datasheet RGW80TS65 Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Collector To Emitter Saturation Voltage : VCE (sat) [V] Collector To Emitter Saturation Voltage : VCE (sat) [V] 20 Tj=25ºC 15 IC=80A 10 IC=40A IC=20A 5 0 5 10 15 Tj=175ºC 15 IC=80A IC=40A 10 IC=20A 5 0 5 20 Gate to Emitter Voltage : VGE [V] 15 20 Gate to Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current Fig.12 Typical Switching Time vs. Gate Resistance 1000 1000 td(off) Switching Time [ns] td(off) Switching Time [ns] 10 100 tf td(on) 10 tr tf 100 10 td(on) tr VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load VCC=400V, IC=40A VGE=15V, Tj=175ºC Inductive load 1 1 0 10 20 30 40 50 60 70 80 0 Collector Current : IC [A] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 6/9 2017.10 - Rev.A Datasheet RGW80TS65 Electrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance Fig.13 Typical Switching Energy Losses vs. Collector Current 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 1 Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load Eoff 1 Eon 0.1 VCC=400V, IC=40A VGE=15V, Tj=175ºC Inductive load 0.01 0.01 0 10 20 30 40 50 60 70 0 80 10 20 30 40 50 Gate Resistance : RG [Ω] Collector Current : IC [A] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 10000 15 Gate to Emitter Voltage : VGE [V] Cies Capacitance [pF] 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 10 5 VCC=400V IC=40A Tj=25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 120 Gate Charge : Qg[nC] 7/9 2017.10 - Rev.A Datasheet RGW80TS65 Electrical Characteristic Curves Fig.17 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 1 D= 0.5 0.2 0.1 0.1 Single Pulse 0.01 PDM 0.01 t1 0.02 0.05 0.001 1E-6 C1 225.2u 1E-5 1E-4 C2 644.8u C3 R1 R2 R3 1.012m 84.37m 51.91m 303.7m 1E-3 1E-2 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 1E-1 1E+0 Pulse Width : t1[s] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 8/9 2017.10 - Rev.A Datasheet RGW80TS65 Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% Fig.18 Inductive Load Circuit IC 10% td(on) tr ton td(off) tf toff VCE 10% Eon Eoff VCE(sat) Fig.19 Inductive Load Waveform www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 9/9 2017.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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