RGWS80TS65GC13

RGWS80TS65 Datasheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC (100°C) 40A VCE(sat) (Typ.) 1.6V PD 202W lFeatures TO-247GE (1) (2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications PFC Packaging Solar converters Reel Size (mm) - Tape Width (mm) - Mid to high switching frequency converters Tube Type Basic Ordering Unit (pcs) 600 Packing Code C13 Marking RGWS80TS65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 71 A TC = 100°C IC 43 A ICP*1 120 A TC = 25°C PD 202 W TC = 100°C PD 101 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/9 2021.08 - Rev.A Datasheet RGWS80TS65 lThermal Resistance Values Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Unit Min. Typ. Max. - - 0.74 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.6 2.0 V - 2.0 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 20.0mA IC = 40A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 2/9 2021.08 - Rev.A Datasheet RGWS80TS65 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 2530 - Output Capacitance Coes VGE = 0V, - 65 - Reverse transfer Capacitance Cres f = 1MHz - 46 - Total Gate Charge Qg VCE = 400V, - 83 - Gate - Emitter Charge Qge IC = 40A, - 18 - Gate - Collector Charge Qgc VGE = 15V - 31 - Turn - on Delay Time td(on) - 40 - - 17 - - 114 - - 40 - - 0.70 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery Eon Turn - off Switching Loss Eoff - 0.66 - Turn - on Delay Time td(on) - 38 - - 18 - - 127 - - 74 - - 0.70 - - 0.84 - tr Turn - off Delay Time td(off) Fall Time tf Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 40A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery nC ns Turn - on Switching Loss Rise Time pF mJ ns mJ IC = 120A, VCC = 520V Reverse Bias Safe Operating RBSOA VP = 650V, VGE = 15V Area RG = 100Ω, Tj = 175℃ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/9 FULL SQUARE - 2021.08 - Rev.A Datasheet RGWS80TS65 lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 80 200 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 240 160 120 80 60 40 20 40 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 1μs 140 100 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 100μs 10 1 0.1 120 100 80 60 40 Tj ≤ 175ºC VGE = 15V 20 TC = 25ºC Single Pulse 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 4/9 2021.08 - Rev.A Datasheet RGWS80TS65 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 120 120 Tｊ = 25ºC VGE = 20V VGE = 15V 80 VGE = 12V VGE = 10V 60 VGE = 8V 40 20 VGE = 15V 80 VGE = 12V VGE = 10V 60 40 VGE = 8V 20 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 3 4 5 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 60 50 40 30 20 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 80 70 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 20V 100 Collector Current : IC [A] Collector Current : IC [A] 100 Tｊ = 175ºC Tj = 175ºC 10 3 IC = 80A IC = 40A 2 IC = 20A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 5/9 2021.08 - Rev.A Datasheet RGWS80TS65 lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 80A 15 IC = 40A IC = 20A 10 5 0 15 IC = 80A IC = 40A IC = 20A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 td(off) Switching Time [ns] Switching Time [ns] 10 100 tf td(on) 10 tr td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 40A, Tj = 175ºC Inductive load 1 1 0 20 40 60 0 80 20 30 40 50 Gate Resistance : Rg [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 6/9 2021.08 - Rev.A Datasheet RGWS80TS65 lElectrical Characteristic Curves Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load Eoff 1 Eon 0.1 VCC = 400V, IC = 40A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0.01 0 20 40 60 0 80 Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 10000 Gate To Emitter Voltage : V GE [V] Capacitance [pF] 40 50 15 1000 Coes Cres f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 30 Fig.16 Typical Gate Charge Cies 10 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 100 10 10 5 VCC = 400V IC = 40A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 Gate Charge : Qg [nC] 7/9 2021.08 - Rev.A Datasheet RGWS80TS65 lElectrical Characteristic Curves Fig.17 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 0.1 D = 0.5 0.2 0.1 PDM 0.01 t1 Single Pulse t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 0.05 0.001 1E-6 C1 561.2u 1E-5 1E-4 C2 1.547m 1E-3 C3 13.09m 1E-2 R1 232.8m R2 210.5m 1E-1 R3 11.88m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 8/9 2021.08 - Rev.A Datasheet RGWS80TS65 ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% IC 10% Fig.18 Inductive Load Circuit tr td(on) ton td(off) tf toff VCE 10% Eon Eoff VCE(sat) Fig.19 Inductive Load Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 9/9 2021.08 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001