RGWX5TS65DHRC11

RGWX5TS65DHR Datasheet 650V 75A Field Stop Trench IGBT lOutline VCES 650V 75A 1.5V 348W IC (100°C) VCE(sat) (Typ.) PD lFeatures TO-247N (1) (2)(3) lInner Circuit 1) AEC-Q101 Qualified (2) (1) Gate (2) Collector (3) Emitter 2) Low Collector - Emitter Saturation Voltage *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications Automotive Packaging On & Off Board Chargers Reel Size (mm) - Tape Width (mm) - DC-DC Converters Type PFC Industrial Inverter Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGWX5TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 132 A TC = 100°C IC 81 A ICP*1 300 A TC = 25°C IF 73 A TC = 100°C IF 43 A IFP*1 300 A TC = 25°C PD 348 W TC = 100°C PD 174 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 1/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.43 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.93 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.5 1.9 V - 1.85 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 50.4mA IC = 75A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 2/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 5980 - Output Capacitance Coes VGE = 0V, - 156 - Reverse transfer Capacitance Cres f = 1MHz - 118 - Total Gate Charge Qg VCE = 400V, - 213 - Gate - Emitter Charge Qge IC = 75A, - 42 - Gate - Collector Charge Qgc VGE = 15V - 82 - Turn - on Delay Time td(on) - 62 - - 17 - - 237 - - 35 - - 0.83 - - 0.76 - - 57 - - 17 - - 263 - - 66 - - 0.83 - - 0.98 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 37.5A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 37.5A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 300A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 100Ω, Tj = 175℃ www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 3/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 92 - ns - 8.9 - A - 0.45 - μC IF = 40A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 14.5 - μJ Diode Reverse Recovery Time trr - 151 - ns Diode Peak Reverse Recovery Current Irr - 11.8 - A Diode Reverse Recovery Charge Qrr - 1.04 - μC Diode Reverse Recovery Energy Err - 45.9 - μJ www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. IF = 37.5A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 37.5A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR Fig.1 Power Dissipation vs. Case Temperature 450 Fig.2 Collector Current vs. Case Temperature 160 400 140 350 Collector Current : IC [A] Power Dissipation : PD [W] lElectrical Characteristic Curves 300 250 200 150 100 120 100 80 60 40 Tj ≤ 175ºC VGE ≥ 15V 20 50 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area 1000 25 Fig.4 Reverse Bias Safe Operating Area 400 1μs Collector Current : IC [A] Collector Current : IC [A] 350 10μs 100 100μs 10 1 0.1 300 250 200 150 100 Tj ≤ 175ºC VGE = 15V 50 TC = 25ºC Single Pulse 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 300 300 Tｊ = 25ºC VGE = 20V Collector Current : IC [A] Collector Current : IC [A] 250 Tｊ = 175ºC VGE = 15V 200 VGE = 10V VGE = 12V 150 VGE = 8V 100 50 250 VGE = 20V VGE = 15V 200 VGE = 12V 150 VGE = 10V 100 VGE = 8V 50 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 150 3 4 5 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 125 Collector Current : IC [A] 2 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 100 75 50 Tj = 175ºC 25 1 Collector To Emitter Voltage : VCE [V] Tj = 25ºC 3 IC = 150A IC = 75A 2 IC = 37.5A 1 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 150A 15 IC = 75A IC = 37.5A 10 5 0 IC = 150A 15 IC = 75A IC = 37.5A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] Capacitance [pF] 1000 Coes 100 Cres 10 f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 20 Fig.12 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Capacitance vs. Collector to Emitter Voltage 100000 10000 10 10 5 VCC = 400V IC = 75A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 50 100 150 200 250 Gate Charge : Qg [nC] 7/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.13 Typical Switching Time vs. Collector Current Fig.14 Typical Switching Time vs. Gate Resistance 1000 1000 100 td(off) Switching Time [ns] Switching Time [ns] td(off) td(on) tf 10 100 td(on) tf tr 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load VCC = 400V, IC = 37.5A, VGE = 15V, Tj = 25ºC Inductive load 1 1 0 25 50 75 100 125 150 0 10 20 30 40 50 Gate Resistance : Rg [Ω] Collecter Current : IC [A] Fig.15 Typical Switching Energy Losses vs. Collector Current 10 Fig.16 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Eon Eoff 1 0.1 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25ºC Inductive load 0.01 Eoff 1 Eon 0.1 VCC = 400V, IC = 37.5A, VGE = 15V, Tj = 25ºC Inductive load 0.01 0 25 50 75 100 125 150 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 10 8/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.17 Typical Switching Time vs. Collector Current Fig.18 Typical Switching Time vs. Gate Resistance 1000 1000 td(off) Switching Time [ns] Switching Time [ns] td(off) tf 100 td(on) 10 100 tf td(on) tr 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, IC = 37.5A, VGE = 15V, Tj = 175ºC Inductive load 1 1 0 25 50 75 100 125 150 0 10 40 50 Fig.20 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.19 Typical Switching Energy Losses vs. Collector Current 10 Eoff 0.1 30 Gate Resistance : Rg [Ω] Collecter Current : IC [A] 1 20 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 Eoff 1 Eon 0.1 VCC = 400V, IC = 37.5A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0 25 50 75 100 125 150 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 10 9/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.22 Typical Diode Revese Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Fig.21 Typical Diode Forward Current vs. Forward Voltage 300 Forward Current : IF [A] 250 200 150 Tj = 25ºC 100 50 Tj = 175ºC 0 300 200 Tj = 175ºC 100 0 0 1 2 3 4 5 0 Forward Voltage : VF [V] Tj = 175ºC 10 Tj = 25ºC 5 VCC = 400V diF/dt = 200A/μs Inductive load 50 75 100 125 150 Fig.24 Typical Diode Rrverse Recovery Charge vs. Forward Current 2.5 Reverse Recovery Charge : Qrr [μC] 15 25 Forward Current : IF [A] Fig.23 Typical Diode Reverse Recovery Current vs. Forward Current 20 Reverse Recovery Current : Irr [A] VCC = 400V diF/dt = 200A/μs Inductive load Tj = 25ºC 0 VCC = 400V diF/dt = 200A/μs Inductive load 2 1.5 Tj = 175ºC 1 0.5 Tj = 25ºC 0 0 25 50 75 100 125 150 0 Forward Current : IF [A] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 Forward Current : IF [A] 10/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR lElectrical Characteristic Curves Fig.25 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.1 0.2 0.1 PDM t1 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse 0.02 0.05 0.001 1E-6 0.01 C1 731.4u 1E-5 1E-4 C2 3.116m 1E-3 C3 1.525m R1 78.31m 1E-2 R2 153.1m R3 38.59m 1E-1 1E+0 Pulse Width : t1 [s] Fig.26 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 0.1 0.2 D = 0.5 0.1 PDM Single Pulse 0.01 t1 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.02 0.05 0.001 1E-6 C1 330.3u 1E-5 1E-4 C2 719.9u 1E-3 C3 1.900m 1E-2 R1 149.6m R2 114.2m 1E-1 R3 316.2m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 11/12 2022.12 - Rev.C Datasheet RGWX5TS65DHR ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.27 Inductive Load Circuit IC 10% tr td(on) trr , Qrr IF ton diF/dt td(off) tf toff VCE 10% Irr Eon Fig.29 Diode Reverse Recovery Waveform www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.28 Inductive Load Waveform 12/12 2022.12 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1107 S Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001