RGWX5TS65HR
Datasheet
650V 75A Field Stop Trench IGBT
lOutline
VCES
650V
75A
1.5V
348W
IC (100°C)
VCE(sat) (Typ.)
PD
lFeatures
TO-247N
(1) (2)(3)
lInner Circuit
1) AEC-Q101 Qualified
(2)
(1) Gate
(2) Collector
(3) Emitter
2) Low Collector - Emitter Saturation Voltage
3) Low Switching Loss & Soft Switching
(1)
4) Pb - free Lead Plating ; RoHS Compliant
(3)
lApplication
lPackaging Specifications
Automotive
Packaging
On & Off Board Chargers
Reel Size (mm)
-
Tape Width (mm)
-
DC-DC Converters
Type
PFC
Industrial Inverter
Tube
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGWX5TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
±30
V
TC = 25°C
IC
132
A
TC = 100°C
IC
81
A
Pulsed Collector Current
ICP*1
300
A
Diode Pulsed Forward Current
IFP
*1
300
A
Collector Current
Power Dissipation
TC = 25°C
PD
348
W
TC = 100°C
PD
174
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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1/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lThermal Resistance
Parameter
Symbol
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Values
Min.
Typ.
Max.
-
-
0.43
Unit
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
Conditions
BVCES IC = 10μA, VGE = 0V
Values
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage
Current
IGES
VGE = ±30V, VCE = 0V
-
-
±200
nA
5.0
6.0
7.0
V
-
1.5
1.9
V
-
1.85
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 50.4mA
IC = 75A, VGE = 15V,
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 175°C
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2/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V,
-
5980
-
Output Capacitance
Coes
VGE = 0V,
-
156
-
Reverse transfer Capacitance
Cres
f = 1MHz
-
118
-
Total Gate Charge
Qg
VCE = 400V,
-
213
-
Gate - Emitter Charge
Qge
IC = 75A,
-
42
-
Gate - Collector Charge
Qgc
VGE = 15V
-
82
-
Turn - on Delay Time
td(on)
-
62
-
-
17
-
-
237
-
-
35
-
-
0.83
-
-
0.76
-
-
57
-
-
17
-
-
263
-
-
66
-
-
0.83
-
-
0.98
-
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
Turn - on Delay Time
td(on)
tr
Rise Time
Turn - off Delay Time
td(off)
tf
Fall Time
Turn - on Switching Loss
Eon
Turn - off Switching Loss
Eoff
IC = 37.5A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
IC = 37.5A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
Unit
pF
nC
ns
mJ
ns
mJ
IC = 300A, VCC = 520V,
Reverse Bias Safe Operating
Area
RBSOA VP = 650V, VGE = 15V,
FULL SQUARE
-
RG = 100Ω, Tj = 175℃
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3/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
Fig.1 Power Dissipation
vs. Case Temperature
450
Fig.2 Collector Current
vs. Case Temperature
160
400
140
350
Collector Current : IC [A]
Power Dissipation : PD [W]
lElectrical Characteristic Curves
300
250
200
150
100
120
100
80
60
40
Tj ≤ 175ºC
VGE ≥ 15V
20
50
0
0
0
25
50
0
75 100 125 150 175
Case Temperature : TC [°C ]
50
75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
25
Fig.4 Reverse Bias Safe Operating Area
400
1μs
Collector Current : IC [A]
Collector Current : IC [A]
350
10μs
100
100μs
10
1
0.1
300
250
200
150
100
Tj ≤ 175ºC
VGE = 15V
50
TC = 25ºC
Single Pulse
0
0.01
1
10
100
0
1000
Collector To Emitter Voltage : VCE [V]
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200
400
600
800
Collector To Emitter Voltage : VCE [V]
4/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
300
300
Tj = 25ºC
VGE = 20V
Collector Current : IC [A]
Collector Current : IC [A]
250
Tj = 175ºC
VGE = 15V
200
VGE = 10V
VGE = 12V
150
VGE = 8V
100
50
250
VGE = 20V
VGE = 15V
200
VGE = 12V
150
VGE = 10V
100
VGE = 8V
50
0
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE [V]
150
3
4
5
VGE = 15V
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
VCE = 10V
125
Collector Current : IC [A]
2
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
4
Fig.7 Typical Transfer Characteristics
100
75
50
Tj = 175ºC
25
1
Collector To Emitter Voltage : VCE [V]
Tj = 25ºC
3
IC = 150A
IC = 75A
2
IC = 37.5A
1
0
0
0
2
4
6
8
10
25
12
Gate To Emitter Voltage : VGE [V]
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50
75
100 125 150 175
Junction Temperature : Tj [°C ]
5/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
Tj = 175ºC
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Collector To Emitter Saturation
Voltage : VCE(sat) [V]
Tj = 25ºC
IC = 150A
15
IC = 75A
IC = 37.5A
10
5
0
IC = 150A
15
IC = 75A
IC = 37.5A
10
5
0
5
10
15
20
5
Gate To Emitter Voltage : VGE [V]
Capacitance [pF]
1000
Coes
100
Cres
10
f = 1MHz
VGE = 0V
Tj = 25ºC
1
0.01
20
Fig.12 Typical Gate Charge
15
Gate To Emitter Voltage : V GE [V]
Cies
15
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Capacitance
vs. Collector to Emitter Voltage
100000
10000
10
10
5
VCC = 400V
IC = 75A
Tj = 25ºC
0
0.1
1
10
100
0
Collector To Emitter Voltage : VCE [V]
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50
100
150
200
250
Gate Charge : Qg [nC]
6/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lElectrical Characteristic Curves
Fig.13 Typical Switching Time
vs. Collector Current
Fig.14 Typical Switching Time
vs. Gate Resistance
1000
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
td(on)
tf
10
td(off)
100
td(on)
tf
tr
10
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
Inductive load
VCC = 400V, IC = 37.5A,
VGE = 15V, Tj = 25ºC
Inductive load
1
1
0
25
50
75
100 125 150
0
10
20
30
40
50
Gate Resistance : Rg [Ω]
Collecter Current : IC [A]
Fig.15 Typical Switching Energy Losses
vs. Collector Current
10
Fig.16 Typical Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
Eon
Eoff
1
0.1
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
Inductive load
0.01
Eoff
1
Eon
0.1
VCC = 400V, IC = 37.5A,
VGE = 15V, Tj = 25ºC
Inductive load
0.01
0
25
50
75
100 125 150
0
20
30
40
50
Gate Resistance : RG [Ω]
Collecter Current : IC [A]
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10
7/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lElectrical Characteristic Curves
Fig.17 Typical Switching Time
vs. Collector Current
Fig.18 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
Switching Time [ns]
Switching Time [ns]
td(off)
tf
100
td(on)
10
100
tf
td(on)
tr
10
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, IC = 37.5A,
VGE = 15V, Tj = 175ºC
Inductive load
1
1
0
25
50
75
100 125 150
0
10
40
50
Fig.20 Typical Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
Fig.19 Typical Switching Energy Losses
vs. Collector Current
10
Eoff
0.1
30
Gate Resistance : Rg [Ω]
Collecter Current : IC [A]
1
20
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.01
Eon
1
Eoff
0.1
VCC = 400V, IC = 37.5A,
VGE = 15V, Tj = 175ºC
Inductive load
0.01
0
25
50
75
100 125 150
0
20
30
40
50
Gate Resistance : RG [Ω]
Collecter Current : IC [A]
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10
8/10
2021.12 - Rev.B
Datasheet
RGWX5TS65HR
lElectrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
Transient Thermal Impedance
: Zθ(j-c) [°C/W]
1
D = 0.5
0.1
0.2
0.1
PDM
t1
0.01
0.02
0.05
0.001
1E-6
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
Single Pulse
0.01
1E-5
C1
731.4u
1E-4
C2
3.116m
1E-3
C3
1.525m
1E-2
R1
78.31m
R2
153.1m
1E-1
R3
38.59m
1E+0
Pulse Width : t1 [s]
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2021.12 - Rev.B
Datasheet
RGWX5TS65HR
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
Fig.22 Inductive Load Circuit
IC
10%
tr
td(on)
ton
td(off)
tf
toff
VCE
10%
Eon
Eoff
VCE(sat)
Fig.23 Inductive Load Waveform
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10/10
2021.12 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1107 S
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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