RHP020N06

4V Drive Nch MOSFET RHP020N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. (1)Gate (2)Drain (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 Applications Switching Packaging specifications and hFE Package Type RHP020N06 Code Basic ordering unit (pieces) Taping T100 1000 (3)Source Abbreviated symbol : LR Inner circuit DRAIN GATE ∗2 ∗1 SOURCE ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 40 40 0.7mm ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg Limits 60 ±20 ±2 ±8 2 8 500 2 150 −55 to +150 Unit V V A A A A mW W °C °C ∗2 Thermal resistance Parameter Channel to ambient ∗ When mounted on a 40 40 0.7mm ceramic board www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. + + Symbol Rth(ch-a) Limits 250 62.5 Unit °C/W °C/W ∗ + + 1/4 2009.03 - Rev.A RHP020N06 Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 60 − 1.0 − − − 2.0 − − − − − − − − − − Typ. − − − − 150 200 240 − 140 50 40 7 10 22 18 7 1 2 Max. ±10 − 1 2.5 200 280 340 − − − − − − − − 14 − − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 10V ID= 2A, VGS= 4.5V ID= 2A, VGS= 4V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 30V ID= 1A VGS= 10V RL=30Ω RG=10Ω VDD 30V VGS= 10V ID= 2A RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS= 2A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.03 - Rev.A RHP020N06 Electrical characteristics curves 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 Ta=25°C Pulsed DRAIN CURRENT : ID[A] VGS= 10V VGS= 5.0V VGS= 4.5V VGS= 3.5V VGS= 4.0V VGS= 2.8V VGS= 2.4V 10 8 6 4 2 0 0 2 4 6 8 10 VGS= 3.0V VGS= 2.4V 0.001 0 1 2 3 VGS= 10V Ta=25°C VGS= 5.0V Pulsed VGS= 4.5V VGS= 4.0V 10 DRAIN CURRENT : ID[A] VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet DRAIN CURRENT : ID[A] 1 0.1 0.01 4 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] Ta= 25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 10 10 10 VGS= 4.5V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.1 0 0.01 0.01 0.1 1 10 0.01 0.01 0 0.1 1 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed 1 10 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed 10 VGS=0V Pulsed 1 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 0.01 0.01 0.01 0.1 1 10 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.03 - Rev.A RHP020N06 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 0.6 SWITCHING TIME : t [ns] 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 ID= 1.0A ID= 2.0A Ta=25°C Pulsed 1000 td(off) 100 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD= 30V VGS=10V RG=10Ω Pulsed 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 Ta=25°C VDD= 30V ID= 2.0A RG=10Ω Pulsed 10 td(on) 1 0.01 0.1 1 10 tr GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 1000 CAPACITANCE : C [pF] DRAIN CURRENT : ID (A) 100 10 Operation in this area is limited by RDS(ON) (VGS= 10V) 100us 1ms Ciss 1 DC operation PW = 10ms 100 Crss Ta=25°C f=1MHz VGS=0V 0.1 0.01 Coss 10 0.01 0.1 1 10 100 0.001 Ta = 25°C Single Pulse MOUNTED ON SERAMIC BOARD 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL 　RESISTANCE : r (t) 10 1 0.1 Ta = 25°C Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W 0.01 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.03 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 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If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.1