RHU002N06T106

4V Drive Nch MOSFET RHU002N06 Structure Silicon N-channel MOSFET transistor Dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (2) (1) 0.1Min. Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. 2.1 (3) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions (2) Gate Abbreviated symbol : KP (3) Drain Applications Switching Packaging specifications Equivalent circuit Package Type Taping Code T106 Basic ordering unit (pieces) 3000 (3) RHU002N06 ∗2 (2) ∗1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID ±200 mA Pulsed IDP ∗1 ±800 mA Continuous IS 200 mA Pulsed ISP ∗1 Drain current Source current (Body diode) PD Total power dissipation ∗2 800 mA 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 625 Unit °C / W ∗ With each pin mounted on the recommended land. www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/3 2012.05 - Rev.C RHU002N06 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit IGSS − − ±10 μA V (BR) DSS 60 − − V ID=1mA, VGS=0V IDSS − − 1 μA VDS=60V, VGS=0V VGS (th) 1 − 2.5 V − 1.7 2.4 − 2.8 4.0 l Yfs l∗ 0.1 − − Input capacitance Ciss − 15 Output capacitance Coss − 8 Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Drain-source on-state resistance RDS (on)∗ Forward transfer admittance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time VDS=10V, ID=1mA ID=200mA, VGS=10V Ω ID=200mA, VGS=4V S VDS=10V, ID=200mA − pF − pF VDS=10V VGS=0V f=1MHz Crss − 4 − pF td (on)∗ − 6 − ns tr∗ − 5 − ns td (off)∗ − 12 − ns tf∗ − 95 − ns Total gate charge Qg∗ − 2.2 4.4 nC Gate-source charge Qgs∗ − 0.6 − nC Gate-drain charge Qgd∗ − 0.3 − nC Fall time Test Conditions VGS=±20V, VDS=0V ID=100mA, VDD 30V VGS=10V RL=300Ω RG=10Ω VDD 30V VGS=10V ID=200mA ∗ Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=200mA, VGS=0V ∗Pulsed 0.8 1 0.7 DRAIN CURRENT : ID (A) 8V 6V 0.6 DRAIN CURRENT : ID (A) Ta=25°C Pulsed 0.5 4V 0.4 0.3 3.5V 0.2 VGS=3V VDS=10V Pulsed 0.1 Ta=−25˚C 25˚C 75˚C 125˚C 0.01 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig.1 Typical Output Characteristics 10 VGS=10V Pulsed Ta=125°C 75°C 25°C −25°C 1.0 0.01 0.1 VDS=10V ID=1mA Pulsed 2.0 1.5 1.0 0.5 0.0 −50 −25 1.0 DRAIN CURRENT : I D (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 1.0 0.01 0.1 1.0 DRAIN CURRENT : I D (A) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 2/3 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.3 Gate Threshold Voltage vs. Channel Temperature Fig.2 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 2.5 GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) 7 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10V GATE THRESHOLD VOLTAGE : VGS (th) (V) Electrical characteristic curves Ta=25°C Pulsed 6 5 4 ID=200mA 3 2 100mA 1 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2012.05 - Rev.C RHU002N06 Data Sheet 1 2.5 ID=200mA 2.0 100mA 1.5 1.0 −50 −25 0 25 50 75 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0.0 100 125 150 0.2 0.4 0.6 Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.4 0.6 0.8 0.01 1000 Ciss 10 Coss Crss 1 0.01 1 DRAIN CURRENT : ID (A) 0.1 1 10 tf 100 Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed td(off) 10 td(on) tr 1 1 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Forward Transfer Admittance vs. Drain Current 1.2 1.0 Fig.9 Reverse Drain Current vs. Source-Drain Voltage ( ΙΙ ) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 75°C 125°C 0.1 0.2 Ta=25°C f=1MHz VGS=0V Ta=−25°C 25°C 0.01 0.01 SOURCE-DRAIN VOLTAGE : VSD (V) 100 VGS=10V Pulsed 0.001 0.001 0V 0.001 0.0 1.2 1.0 VGS=10V 0.1 Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) 1 0.1 0.8 Ta=25°C Pulsed 1 SOURCE-DRAIN VOLTAGE : VSD (V) CHANNEL TEMPERATURE : Tch (°C) FORWARD TRANSFER ADMITTANCE : I Yfs I (S) 10 VGS=0V Pulsed REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 3.0 10 100 1000 DRAIN CURRENT : ID (mA) Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Switching Characteristics Switching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) tr td (off) toff ton Fig.13 Switching time test circuit www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ tf Fig.14 Switching time waveforms 3/3 2012.05 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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